HXY-MOSFET-AOD409-HXY
| Part # | HXY-MOSFET-AOD409-HXY |
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HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The AOD409 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
TO252-2
L
Battery protection or in other Switching application.
D
General Features
V
DS
= -60V
I
D
=-50A
G
R
DS(ON)
< 24 mΩ @ V
GS
=10V
Application
S
P-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AOD409
TO252-2L
50P06
XXYY
2500
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
VDS
Parameter
Rating
-60
Units
V
Drain-Source Voltage
VGS
±
20
-50
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
-27
A
-70
A
P
D
@T
C
=25
℃
TSTG
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
52.1
W
-55 to 150
-55 to 150
62
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
2.4
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-18A
-0.035
20
—
V/
℃
24
30
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-12A
25
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.28
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-10V , I
D
=-18A
23
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
7
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
25
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
6.7
5.5
38
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
23.6
100
6.8
3635
224
141
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-45
-70
-1
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-47.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Characteristics
30
28
26
24
22
20
12
10
8
I
D
=-12A
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
6
V
GS
=-4.5V
4
V
GS
=-3V
0.5
2
0
0
0.25
0.75
1
2
4
6
8
10
-V
DS
Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
V
DS
=-20V
I
D
=-12A
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
20
40
60
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
10ms
Coss
Crss
100ms
DC
0.10
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
-V
DS
(V)
100
1000
1
5
9
13
17
21
25
-V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
TO252-2L Package
Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TY
P
.
0.190 TY
P
.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
2.900 TY
P
.
1.600 TY
P
.
0.114 TYP.
0.063 TY
P
.
1.400
1.700
0.055
0.067
L3
L4
Φ
θ
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TY
P
.
0.211 TYP.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD409
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
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