HXY-MOSFET-AOD4130-HXY
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HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The AOD4130-HXY uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
TO252-2
L
General Features
V
DS
= 60V
I
D
=30 A
PIN2 D
!
“
R
DS(ON)
< 26mΩ @ V
GS
=10V
Application
! ”
“
!
PIN1 G
“
!
PIN3 S
Battery protection
N-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AOD4130-HXY
TO252-2L
30N06XXXX YYYY
2500
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
V
DS
Drain-Source Voltage
60
±
20
30
V
GS
V
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
15
A
5.6
A
4.5
A
46
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
25.5
22.6
34.7
2
mJ
A
I
AS
T
o
tal Power Dissipation
4
W
W
℃
℃
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
62
℃
/W
3.6
℃
/W
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=15A
Min.
60
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
—
0.063
22
—
△
BV
DSS
/
△
T
J
V/
℃
—
26
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=10A
—
30
38
m
Ω
V
GS(th)
Gate Threshold Voltage
1.2
—
2.5
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
—
—
-5.24
—
—
1
mV/
℃
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
DSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
nA
S
±
100
—
V
DS
=5V , I
D
=15A
17
V
DS
=0V , V
GS
=0V , f=1MHz
3.2
12.6
3.2
6.3
8
—
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
Q
gs
Q
gd
T
d(on)
T
r
—
V
DS
=48V , V
GS
=4.5V , I
D
=12A
nC
ns
—
Turn-On Delay Time
Rise Time
—
V
DD
=30V , V
GS
=10V ,
14.2
24.4
4.6
1378
86
—
R
G
=3.3
,
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
I
D
=10A
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
64
—
—
23
46
1.2
A
A
V
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
—
V
GS
=0V , I
S
=1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ coppe
r
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power
dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
35
33
30
28
25
12
10
8
I
D
=12A
V
GS
=10V
V
GS
=7
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
6
4
2
0
0
0.5
1
1.5
2
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
I
D
=12A
10
8
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1ms
10ms
100ms
DC
Coss
Crss
0.10
T =25
℃
C
Single Pulse
0.01
10
0.1
1
10
V
DS
(V)
100
1000
1
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
TO252-2L Package
Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
0.483 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
10.400
0.236
0.086
0.386
0.244
0.094
0.409
e
L
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD4130-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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