HXY-MOSFET-AOD603-HXY
| Part # | HXY-MOSFET-AOD603-HXY |
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HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Description
The AOD603-HXY uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D1/D2
Battery protection or in other Switching application.
G2
S2
G1
S1
General Features
TO252-4L
V
DS
= 60V
I
D
=20A
R
DS(ON)
< 34mΩ @ V
GS
=10V
V
DS
= -60V
I
D
=-15A
D2
D1
!
“
R
DS(ON)
<
8
6
m
Ω @ V
GS
=-10V
! ”
“
“
G2
!
G1
!
Application
S1
S2
Wireless charging
N-Channel MOSFET
P-Channel MOSFET
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AOD603-HXY
TO252-4L
6020 XXXX
2500
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Channel
P-Channel
-60
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
60
V
V
±20
±20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
20
-15
A
14
60
-8.5
A
-30
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
22
29.8
mJ
A
IAS
21
-24.4
50
P
D
@T
A
=25
℃
TSTG
T
o
tal Power Dissipation
4
50
W
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
-55 to 150
-55 to 150
℃
T
J
℃
R
θ
JA
62
3
℃
/W
℃
/W
R
θ
JC
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=10V , I
D
=15A
26
34
45
2.5
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=4.5V , I
D
=7A
35
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
—
—
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
nA
S
V
GS
=
±
20V , V
DS
=0V
±
100
—
V
DS
=5V , I
D
=15A
25.3
19
Q
g
—
V
DS
=48V , V
GS
=10V , I
D
=15A
nC
Q
gs
Q
gd
T
d(on)
T
r
2.5
5
—
—
2.8
16.6
21.2
5.6
1027
65
—
V
DD
=30V , V
GS
=10V , R
G
=3.3
—
ns
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
46
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
20
Unit
A
I
S
Continuous Source Current
1,6
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=21A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-10V , I
D
=-10A
7
8
8
6
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=-4.5V , I
D
=-5A
—
100
-2.5
1
85
—
V
GS
=V
DS
, I
D
=-250uA
-1.0
—
—
—
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
nA
S
V
GS
=
±
20V , V
DS
=0V
±
100
—
V
DS
=-5V , I
D
=-4A
—
8.7
11.8
1.9
6.5
8.8
19.6
47.2
9.6
1080
73
Q
g
—
—
V
DS
=-12V , V
GS
=-4.5V , I
D
=-6A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
50
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-15
-1
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-24.4A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Typical Characteristics
60
53
45
38
30
I
D
=12A
2
4
6
8
10
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
2.2
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Typical Characteristics
80
75
70
65
60
10
I
D
=-6A
V
GS
=-10V
8
V
GS
=-7V
V
GS
=-5V
6
4
2
0
V
GS
=-4.5V
V
GS
=-3V
0
0.5
1
1.5
2
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
10
8
10
V
DS
=-20V
I
D
=-6A
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
7
14
21
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
2.2
1.5
1.8
1.4
1.0
0.6
0.2
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
TO252-4L Package Information
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AOD603-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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