HXY-MOSFET-AON3611-HXY
| Part # | HXY-MOSFET-AON3611-HXY |
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HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Description
The
AON3611
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
G2
S2
G1
D2
D2
S1
D1
D1
G2
S2
G1
Battery protection or in other Switching application.
S1
“
Pin 1
General Features
DFN3X3-8L
V
DS
= 30V
I
D
=16 A
R
DS(ON)
< 20mΩ @ V
GS
=10V
V
DS
= -30V
I
D
=-14A
D2
D1
!
G1
“
! ”
“
“
G2
R
DS(ON)
< 30mΩ @ V
GS
=10V
Application
!
!
S1
S2
Battery protection
N-Channel
P-Channel
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
DFN3X3-8L
30G20 XXX YYYY
5000
AON3611
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
V
DS
Parameter
N-Channel P-Channel
Units
Drain-Source Voltage
30
-30
V
V
V
GS
±
20
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
16
5
-14
-4
A
A
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
2.3
1.8
-1.8
-1.5
I
D
@T
A
=70
℃
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
40
-40
110
– 20
10.8
A
mJ
A
26.6
8.7
I
AS
T
o
tal Power Dissipation
4
10.8
W
P
D
@T
C
=25
℃
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
2
-55 to 150
-55 to 150
—
2
-55 to 150
-55 to 150
62
W
℃
P
D
@T
A
=100
℃
T
STG
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
R
θ
JC
℃
/W
℃
/W
—
6
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
0.023
14
—
V/
℃
20
25
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=6A
20
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.2
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
14
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.3
5
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=20V , V
GS
=4.5V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
1.11
2.61
7.7
46
—
—
—
V
DD
=12V , V
GS
=10V , R
G
=3.3
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
I
D
=6A
11
—
3.6
416
62
—
C
iss
C
oss
C
rss
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
51
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
16
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
30
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=12.7A
4.The power dissipation is limited by 150
℃
junction temperature
5
.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total powe
r
d
issipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-8A
-0.021
25
—
V/
℃
—
30
35
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-6A
—
30
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.2
—
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
nA
S
±
100
V
DS
=-5V , I
D
=-8A
—
12.6
15
—
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
—
—
—
—
—
—
—
—
—
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
9.8
2.2
3.4
16.4
20.2
55
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DD
=-24V , V
GS
=-10V , R
G
=3.3
,
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
10
C
iss
C
oss
C
rss
Input Capacitance
930
148
115
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
–
1
4
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
-24
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1
.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Typical Characteristics
65
50
35
20
50
I
D
=10A
40
V
GS
=10V
30
20
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
10
0
V
GS
=3V
2
4
6
8
10
0
0.5
1
1.5
2
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
7.5
5
6
V
DS
=20V
I
D
=10A
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0
2.5
5
7.5
10
0.00
0.25
0.50
0.75
1.00
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
– 5 0
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m p
℃
e
)
r
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
1000
100
10
1 0 0 . 0 0
1 0 . 0 0
1 . 0 0
F=1.0MHz
Ciss
100us
1 m s
Coss
Crss
10
m
s
100m
DC
0 . 1 0
Tc = 2
o
5C
Single Pul
0 . 0 1
0. 1
1
5
9
13
17
21
25
10
DS
(V)
1
100
1000
V
DS
Drain to Source Voltage (V)
V
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
2
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Typical Characteristics
50
45
50
40
30
20
I
D
=-12A
40
35
V
GS
=-10V
30
25
20
15
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
10
5
V
GS
=-3V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
2
4
6
8
10
-V
-V
GS
(V)
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
V
DS
=-20V
I
D
=-12A
10
8
8
6
4
2
T
J
=150
℃
6
4
2
0
T
J
=25
℃
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2 . 0
1 . 5
1 . 0
0 . 5
1.5
1
0.5
0
– 5 0
0
50
100
e
)
r
150
-50
0
50
100
150
T
J
,
J u n c t i o n
T e m p
℃
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
10ms
100ms
DC
Coss
Crss
0.10
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
DS
(V)
100
1000
9
13
17
21
25
1
5
-V
-V
DS
Drain to Source Voltage(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
DFN3X3-8L Package Information
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AON3611
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein
are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA
XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
Shenzhen HuaXuanYang Electronics CO.,LTD
