HXY-MOSFET-BC857C

Part #HXY-MOSFET-BC857C
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HXY-MOSFET-BC857C
HUAXUANYANG  
HXY  
BC856/BC857/BC858  
PNP Plastic-Encapsulate Transistors  
ELECTRONICS CO.,LTD  
FEATURES  
z
Ideally suited for automatic insertion  
For Switching and AF Amplifier Applications  
C
E
z
B
SOT-23  
Package Marking and Ordering Information  
Marking  
Pack  
Qty(PCS)  
Product ID  
BC856/BC857  
/BC858  
C
3000  
SOT-23  
3
*

:

BC856A
=
A
;
BC856B=
B
;
BC856C
=
C
;  
BC857A
=
E
;
BC857B=
F
;
BC857C
=
G
;  
BC858A
=
J
;
BC858B=
K
;
BC858C
=
L
;  
*
B
E
MA
X
IMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Limit  
Unit  
Collector-Base Voltage  
BC856  
BC857  
BC858  
BC856  
-80  
-50  
-30  
-65  
-45  
V

CBO  

V
Collector-Emitter
V
o
ltage  
V

CEO  

V
BC857  
BC858  
-30  
-5  
V

EBO  

I

C  

E
m
itter-Base
V
oltage  
V
Collector Current  
mA  
-100  
200  
Collector Power Dissipation  
Thermal Resistance From Junction
T
o
A
mbient  
Junction
T
e
m
perature  
P

C  

mW  
R

ΘJA  

T

j  

℃
/W  
625  
150  
℃
℃
S
t
orage
T
e
m
perature  
T

stg  

-55
~
+150  
Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  
HXY  
BC856/BC857/BC858  
PNP Plastic-Encapsulate Transistors  
ELECTRONICS CO.,LTD  
ELECTRICAL CHARACTERISTICS (T
a
=25 unless
 
otherwise specified)  
℃
Part  
Symbol  
Parameter  
Test conditions  
Min  
Max Unit  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
-80  
-50  
-30  
-65  
-45  
-30  
Collector-base  
breakdown voltage  
V

(BR)CBO  

I

C

=-10µA, I

E

=0  
V
Collector-emitter  
breakdown voltage  
V

(BR)CEO  

I

C

=-10mA, I

B

=0  
I

E

=-10µA, I

C

=0  
V
V
Emitter-base  
breakdown voltage  
V

(BR)EBO  

-5  
BC856  
BC857  
BC858  
V

CB

=-70V, I

E

=0  
V

CB

=-50V, I

E

=0  
V

CB

=-30V, I

E

=0  
V

EB

=-5V, I

C

=0  
I

CBO  

I

EBO  

h

FE  

Collector cut-off current  
Emitter cut-off current  
DC current gain  
-100  
nA  
nA  
-100  
220  
450  
800  
BC856A BC857A BC858A  
BC856B BC857B BC858B  
BC856C BC857C BC858C  
110  
200  
420  
V

CE

=-5V, I

C

=-2mA  
Collector-emitter  
saturation voltage  
Base-emitter saturation  
voltage  
V

CE(sat)  

V

BE(sat)  

f

T  

-0.5  
-1.1  
V
V
I

C

=-100mA  
I

B

=-5mA  
V

CE

=-5V, I

C

=-10mA,  
f=30MHz  
Transition frequency  
100  
MHz  
pF  
Collector output  
capacitance  
Cob  
V

CB

=-10V,f= 1MHz  
4.5  
Typical Characteristics  
h

FE

—— I

C  

Static Characteristic  
-8  
-6  
-4  
-2  
-0  
1000  
COMMON  
EMITTER  
T

a

=25
℃
 
-30uA  
-27uA  
-24uA  
-21uA  
-18uA  
-15uA  
T

a

=100
℃  
T

a

=25
℃  
100  
-12uA  
-9uA  
-6uA  
I

B

=-3uA  
COMMON EMITTER  

CE

= -5V  
V
10  
-0.1  
-0  
-2  
-4  
-6  
-8  
-1  
-10  
-100  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
COLLECTOR CURRENT
 
I

C

(mA)  
Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  
HXY  
BC856/BC857/BC858  
PNP Plastic-Encapsulate Transistors  
ELECTRONICS CO.,LTD  
V

CEsat

—— I

C  

V

BEsat

——  
I

C  

-1  
-2  
-1  
T

a

=25
℃
 
T

a

=100
℃  
-0.1  
T

a

=100
℃  
T

a

=25
℃  
β=20  
β=20  
-0.01  
-0.1  
-0.1  
-1  
-10  
-100  
-1.2  
-20  
-0.1  
-1  
-10  
-100  
-100  
150  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
I

C

——  
V

BE  

I

C  

f

T

——  
-100  
-10  
-1  
500  
T

a

=100
℃  
100  
T

a

=25
℃  
COMMON EMITTER  
V

CE

=-5V  
COMMON EMITTER  
V
T

a

=25
℃  

CE

=-5V  
-0.1  
-0.0  
10  
-0.1  
-0.3  
-0.6  
-0.9  
-1  
-10  
BASE-EMMITER VOLTAGE
 
V

BE

(V)  
COLLECTOR CURRENT
 
I

C

(mA)  
C

ob

/ C

ib

—— V

CB

/ V

EB  

P

C

—— T

a  

250  
200  
150  
100  
50  
30  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

10  
C

ob  

1
-0.1  
0
-1  
-10  
0
25  
50  
75  
100  
125  
REVERSE VOLTAGE
 
V

R

(V)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  
HXY  
BC856/BC857/BC858  
PNP Plastic-Encapsulate Transistors  
ELECTRONICS CO.,LTD  
SO
T
-23 Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
SO
T
-23 Suggested Pad Layout  
-100  
Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  
HXY  
BC856/BC857/BC858  
PNP Plastic-Encapsulate Transistors  
ELECTRONICS CO.,LTD  
Attention  
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications  
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG  
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in such applications.  
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products  
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.  
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,  
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and  
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the  
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-100  
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