HXY-MOSFET-BSS131
| Part # | HXY-MOSFET-BSS131 |
Download  | HXY-MOSFET-BSS131 |
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The BSS131 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
SOT-23
Battery protection or in other Switching application.
D
General Features
!
“
V
DS
= 240V
I
D
=0.1A
! ”
“
!
G
“
R
DS(ON)
< 14Ω@ V
GS
=10V
!
S
Application
N-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOT-23
SR
3000
BSS131
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
240
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±20
V
V
GS
0.1
T
A
=25
℃
Continuous Drain Current (T
J
=150
℃
)
A
I
D
0.09
T
A
=100
℃
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
0.4
A
W
I
DM
0.36
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
200
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal resistance,
junction – minimal footprint
R
thJA
–
–
350 K/W
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
=250 µA
DS
=0 V,
I
D
=56 µA
Drain-source breakdown voltage
Gate threshold voltage
240
0.8
–
–
V
1.4
1.8
V
DS
=240 V,
V
GS
=0 V,
I
D (off)
Drain-source leakage current
–
–
0.01 µA
5
T
j
=25 °C
V
DS
=240 V,
V
GS
=0 V,
–
–
T
j
=150 °C
I
GSS
V
V
V
GS
=20 V,
V
DS
=0 V
GS
=4.5 V,
I
D
=0.09 A
GS
=10 V,
I
D
=0.1 A
Gate-source leakage current
–
–
10
20
14
–
nA
R
DS(on)
Drain-source on-state resistance
–
–
9.07
7.7
0.13
Ω
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=0.08 A
,
g
fs
Transconductance
0.06
S
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
–
–
–
–
–
–
–
–
–
–
–
–
–
58
7.3
2.8
3.3
3.1
13.7
64.5
0.16
0.8
2.1
2.90
–
77
10
pF
V
GS
=0 V,
V
DS
=25 V,
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
f
=1 MHz
4.2
5.0
4.6
20
ns
V
V
DD
=120 V,
GS
=10 V,
I
D
=0.1 A,
t
d(off)
t
f
Turn-off delay time
Fall time
R
G
=6
Ω
97
Q
gs
Q
gd
Q
g
Gate to source charge
Gate to drain charge
Gate charge total
0.22 nC
1.2
V
V
DD
=192 V,
I
D
=0.1 A,
GS
=0 to 10 V
3.1
V
plateau
I
S
Gate plateau voltage
Diode continous forward current
Diode pulse current
–
V
A
0.11
0.43
T
A
=25 °C
I
S,pulse
–
V
GS
=0 V,
I
F
=0.1 A,
V
SD
Diode forward voltage
–
0.81
1.2
V
T
j
=25 °C
t
rr
Reverse recovery time
–
–
42.9
22.6
64.3 ns
V
R
=120 V,
I
F
=0.1 A,
d
i
F
/d
t
=100 A/µs
Q
rr
Reverse recovery charge
34
nC
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
0.4
0.12
0.1
0.3
0.2
0.1
0.08
0.06
0.04
0.02
0
0
0
40
80
120
160
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
thJA
=f(
t
p
)
Z
parameter:
D
=
t
p
/
T
10
0
10
3
limited by on-state
resistance
30 µs
100 µs
0.5
1 ms
10
-1
10
-2
10
-3
10
2
0.2
10 ms
0.1
0.05
10
1
100 ms
DC
0.02
0.01
1
0
0
gle pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
10
100
1000
V
DS
[V]
t
p
[s]
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
DS(on)
=f(
I
D
);
T
j
=25 °C
R
parameter:
V
GS
parameter:
V
GS
0.4
25
7 V
2.3 V
2.7 V
3.3 V
3.9 V
4.5 V
10 V
23
21
19
17
15
13
11
9
5 V
3.9 V
0.3
0.2
0.1
0
3.3 V
4.5 V
7 V
5 V
2.7 V
2.3 V
10 V
7
5
0
0
1
2
3
4
5
6
7
0.1
0.2
0.3
0.4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
0.3
0.25
0.2
0.4
0.3
0.2
0.1
0
0.15
0.1
0.05
0
0
1
2
3
4
0.0
0.1
0.2
D
[A]
0.3
0.4
V
GS
[V]
I
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)
=f(
T
j
);
V
DS
=V
GS
;
I
D
=56 µA
R
DS(on)
=f(
T
j
);
I
D
=0.1 A;
V
GS
=10 V
V
parameter:
I
D
50
2.4
2
1.6
1.2
0.8
0.4
40
30
98 %
typ
20
98 %
2 %
10
typ
0
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz; T
j
=25°C
)
parameter:
T
j
10
3
10
0
150 °C
25 °C
150 °C, 98%
25 °C, 98%
10
2
10
1
10
0
10
-1
Ciss
10
-2
Coss
Crss
10
-3
0
0
10
20
30
0.4
0.8
1.2
1.6
2
2.4
2.8
V
SD
[V]
V
DS
[V]
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
13 Typ. gate charge
14 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
V
GS
=f(
Q
gate
);
I
D
=0.1 A pulsed
parameter:
V
DD
300
290
280
270
260
250
240
230
220
210
200
12
120V
10
8
48 V
192 V
6
4
2
0
0
-60
-20
20
60
100
140
0.5
1
1.5
gate
[nC]
2
2.5
Q
T
j
[°C]
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS131
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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