HXY-MOSFET-BSS138K-HXY
| Part # | HXY-MOSFET-BSS138K-HXY |
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HUAXUANYANG
HXY
BSS138K
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The BSS138
K
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
SOT-23
Battery protection or in other Switching application.
D
General Features
!
“
V
DS
= 50V
I
D
= 0.22A
! ”
“
!
G
“
R
DS(ON)
< 2.0Ω@ V
GS
=10V
!
S
Application
N-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOT-23
SS
3000
BSS138K
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
50
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±20
V
V
GS
0.22
T
A
=25
℃
Continuous Drain Current (T
J
=150
℃
)
A
I
D
0.13
T
A
=100
℃
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
0.88
A
W
I
DM
0.35
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
357
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS138K
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Off characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-source breakdown voltage
Gate-body leakage
V
(BR)DSS
I
GSS
V
GS
= 0V, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=50V, V
GS
=0V
V
DS
=30V, V
GS
=0V
50
V
±100
0.5
nA
µA
nA
Zero gate voltage drain current
I
DSS
100
On characteristics
Gate-threshold voltage (note 1)
V
GS(th)
R
DS(on)
g
FS
V
DS
=V
GS
, I
D
=1mA
V
GS
=10V, I
D
=0.22A
V
GS
=4.5V, I
D
=0.22A
V
DS
=10V, I
D
=0.22A
0.8
1.5
2.0
3
V
Ω
S
1.1
1.5
Static drain-source on-resistance (note 1)
Forward transconductance (note 1)
Dynamic characteristics (note 2)
Input capacitance
0.12
C
iss
C
oss
C
rss
27
13
6
V
DS
=25V,V
GS
=0V, f=1MHz
pF
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
t
d(on)
t
r
t
d(off)
t
f
5
V
DD
=30V, V
DS
=10V,
18
36
14
ns
V
I
D
=0.29A,
R
GEN
=6
ꢀ
Turn-off delay time (note 1,2)
Fall time (note 1,2)
Drain-source body diode characteristics
Body diode forward voltage (note 1)
Notes:
V
SD
I
S
=0.44A, V
GS
= 0V
1.4
1. Pulse
T
e
st ; Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. These
parameters have no way to verify.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS138K
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Output Characteristics
Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
a
=25
℃
V
DS
=3V
Pulsed
V
GS
=3V,4V,5V,6V
Pulsed
V
GS
=10V
V
GS
=5V
T
a
=25
℃
T
a
=100
℃
V
GS
=4V
V
GS
=3V
V
GS
=2V
0
1
2
3
4
5
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
6
5
4
3
2
1
0
Pulsed
T
a
=25
℃
Pulsed
I
D
=500mA
V
GS
=4.5V
T
a
=100
℃
V
GS
=10V
T
a
=25
℃
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
1
2.0
1.5
1.0
0.5
0.0
Pulsed
0.1
T
a
=100
℃
I
D
=250uA
T
a
=25
℃
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS138K
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
BSS138K
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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