HXY-MOSFET-BSS84PH6327-HXY

HUAXUANYANG  

HXY  

BSS84PH6327  

ELECTRONICS CO.,LTD  

P-Channel Enhancement Mode MOSFET  

Description  

The BSS84PH6327 uses advanced trench technology and  

design to provide excellent R

DS(ON)

with low gate charge. It  

can be used in a wide variety of applications.  

D

S

General Features  

V

DS

=-50V,I

D

=-0.13A  

G

R

DS(ON)

<5 Ω @ V

GS

=-10V  

SOT-23  

R

DS(ON)

<6 Ω @ V

GS

=-4.5V  

Application  

D

Power switching application  

Hard switched and high frequency circuits  

DC-DC converter  

G

S

P-Channel MOSFET  

Package Marking and Ordering Information  

Product ID  

Pack  

Marking  

Qty(PCS)  

BSS84PH6327  

SOT-23  

B84/PD  

3000  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Limit  

-50  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

V

DS  

±20  

V

V

GS  

-0.13  

A

I

D  

Pulsed Drain Current  

-0.5  

0.35  

A

W

I

DM  

P

D  

Maximum Power Dissipation  

Operating Junction and Storage Temperature Range  

Thermal Resistance ,Junction-to-Ambient

(Note 2)  

-55

T

o

1

50  

62.5  

℃

T

J

,T

STG  

R

θJA  

℃

/W  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

BSS84PH6327  

ELECTRONICS CO.,LTD  

P-Channel Enhancement Mode MOSFET  

Electrical Characteristics (Ta=25

℃

unless otherwise specified)  

Symbol  

Static  

Parameter  

Test conditions  

Min  

Typ  

Max Unit  

V

(BR)DSS

Drain-source breakdown voltage  

V

GS

=0, I

D

=250µA  

V

DS

=V

GS

, I

D

=-250µA  

V

DS

=0, V

GS

=±10V  

V

DS

=-50V, V

GS

=0V  

V

DS

=-40V, V

GS

=0V  

V

GS

=-10V, I

D

=-0.13A  

V

GS

=-4.5V, I

D

=-0.13A  

V

DS

=-25V, I

D

=-0.13A  

I

S

=-0.13A,V

GS

=0V  

-50  

-0.8  

V

V

GS(th)  

I

GSS  

Gate threshold voltage  

Gate-body leakage current  

-2.0  

±10  

-10  

-100  

5

V

µA  

µA  

nA  

Ω

Ω

mS  

V

Zero gate voltage drain current  

I

DSS  

2

2.5  

R

DS(on)  

Drain-source on-resistance

a  

6

g

FS  

V

SD  

Forward transconductance

a  

Diode forward voltage  

50  

-1.0  

Dynamic  

C

iss  

C

oss  

C

rss  

Switching

b  

Input capacitance  

Output capacitance  

Reverse transfer capacitance

b  

25  

15  

3.5  

V

DS

=-25V, V

GS

=0V, f=1MHz  

pF  

nS  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

Turn-off delay time  

Fall time  

16.7  

8.6  

17.9  

5.3  

V

GS

=-10V,V

DS

=-15V  

I

D

=-200mA, R

GEN

=25Ω  

Notes :  

a. Pulse

T

est : Pulse width≤300µs, duty cycle ≤2%.  

b.

Guaranteed by design, not subject to producting

.  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

BSS84PH6327  

ELECTRONICS CO.,LTD  

P-Channel Enhancement Mode MOSFET  

TypicalCharacteristics  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

BSS84PH6327  

ELECTRONICS CO.,LTD  

P-Channel Enhancement Mode MOSFET  

SO

T

-23 Package Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8

°  

SO

T

-23 Suggested Pad Layout  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

BSS84PH6327  

ELECTRONICS CO.,LTD  

P-Channel Enhancement Mode MOSFET  

Attention  

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