HXY-MOSFET-HD6956
| Part # | HXY-MOSFET-HD6956 |
Download  | HXY-MOSFET-HD6956 |
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The HD6956 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
TO252-2
L
General Features
V
DS
= 60V
I
D
=50 A
PIN2 D
!
R
DS(ON)
< 15mΩ @ V
GS
=10V
Application
“
! ”
“
!
PIN1 G
“
!
PIN3 S
Battery protection
N-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
HD6956
TO252-2L
HD6956 XXYYS
2500
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
V
DS
Drain-Source Voltage
60
±
20
50
V
GS
V
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
I
D
@T
C
=25
℃
A
I
D
@T
C
=100
℃
25
7.4
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
6
A
A
9
0
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
39.2
mJ
A
I
AS
28
T
o
tal Power Dissipation
4
45
2
W
W
℃
℃
℃
/W
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
-55 to 150
-55 to 150
62
T
J
R
θ
JA
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
R
θ
JC
Thermal Resistance Junction-Case
1
2.8
℃
/W
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=20A
Min.
60
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
T
e
mperature Coefficient
—
0.057
11
—
△
BV
DSS
/
△
T
J
V/
℃
—
15
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=10A
—
1.2
15
—
20
2.5
m
Ω
R
DS(ON)
V
GS(th)
V
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
—
—
-5.68
—
—
1
mV/
℃
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25
℃
—
—
5
V
DS
=48V , V
GS
=0V , T
J
=55
℃
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
uA
nA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
45
V
GS
=
±
20V , V
DS
=0V
V
DS
=5V , I
D
=15A
±
100
—
—
—
—
—
—
—
—
—
—
—
—
35
80
1
gfs
R
g
Forward Transconductance
Gate Resistance
S
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
19.3
7.1
7.6
7.2
50
Ω
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=48V , V
GS
=4.5V , I
D
=15A
nC
ns
Turn-On Delay Time
Rise Time
V
DD
=30V , V
GS
=10V ,
R
G
=3.3
I
D
=15A
,
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
36.4
7.6
2423
145
97
C
iss
C
oss
C
rss
I
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=15V , V
GS
=0V , f=1MHz
pF
—
A
A
V
G
=V
D
=0V , Force Current
I
SM
V
SD
t
rr
—
—
V
V
GS
=0V , I
S
=A , T
J
=25
℃
16.3
11
—
—
nS
nC
I
F
=15A
,
dI/dt=100A/µs
,
Q
rr
T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ coppe
r
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A
4.The power dissipation is limited by 150
℃
junction temperature 5.The data is theoretically the same as ID
and IDM , in real applications , should be limited by total power dissipation
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
20
19
18
17
16
15
I
D
=12A
4
6
8
10
V
GS
(V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
12
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
TO252-2L Package
Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
0.483 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
10.400
0.236
0.086
0.386
0.244
0.094
0.409
e
L
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HD6956
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
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