HXY-MOSFET-HXY12N65F
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HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Description
The HXY12N65
F
c
an be used in various power
swithching circuit for system miniaturization and
higher efficiency.The package form is TO-220F,
which accords with the RoHS standard.
S
D
G
General Features
TO-220F
V
DS
= 650V,I
D
=12A
R
DS(ON)
< 0.8
Ω
@ V
GS
=10V
PIN2 D
!
Application
“
● Power switch circuit of adaptor and charger.
! ”
“
“
!
PIN1 G
!
PIN3 S
N-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
Units Tube
TO-220F
50
HXY12N65F
12N65 XXX YYYY
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
650
+30
V
V
A
Drain Current, V
GS
@ 4.5V
Drain Current, V
GS
@ 4.5V
12
I
D
@T
C
=25
℃
A
7.5
I
D
@T
C
=100
℃
IDM
Pulsed Drain Current
1
T
o
tal Power Dissipation
48
42
A
W
P
D
@T
C
=25
℃
E
AS
Single Pulse Avalanche Energy
4
Storage
T
e
mperature Range
550
mJ
-55 to 150
℃
TSTG
T
J
Operating Junction
T
e
mperature Range
-55 to 150
℃
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Electrical Characteristics
（
Tc= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Unit
s
Parameter
Test Conditions
Symbol
Min.
650
—
Max.
—
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Breakdown
V
o
ltage
Bvdss Temperature Coefficient
V
V
DSS
ID=250uA,Reference2
5
℃
0.7
—
V/
℃
µ
A
Δ
BV
DSS
/
Δ
T
J
V
DS
=650
V
,
V
GS
= 0
V
,
T
a
= 25
℃
V
DS
=520
V
,
V
GS
= 0
V
,
T
a
= 125
℃
—
—
—
—
—
1
Drain to Source Leakage Current
I
DSS
µ
A
nA
nA
—
100
100
-100
V
GS
=+30V
V
GS
=-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
I
GSS(F)
I
GSS(R)
—
—
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=6A
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
0.6
7
0.8
Ω
V
DS
= V
GS
, I
D
= 250
µ
A
2.0
—
4.0
V
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Typ.
12
Parameter
Test Conditions
Symbol
Units
S
Min.
—
Max.
—
V
DS
=15
V
,
I
D
=6A
Forward Transconductance
Input Capacitance
g
fs
C
iss
C
oss
C
rss
—
1993
160
—
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
—
9.5
—
Resistive Switching Characteristics
Rating
Typ.
28
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
26
—
I
D
=12A V
DD
= 325V
R
G
=10
Ω
Turn-Off Delay Time
Fall Time
—
64
—
—
45
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
40
—
I
D
=12A V
DD
=520V
V
GS
= 10V
Q
gs
Q
gd
—
10
—
nC
—
14
—
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Units
Parameter
Test Conditions
Symbol
Min.
—
Typ.
Max.
12
48
1.5
—
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
—
A
A
I
SM
V
SD
trr
—
—
I
S
=12A,V
GS
=0V
—
—
V
Reverse Recovery Time
—
651
4297
13.2
ns
n
C
A
I
S
=12A,T
j
= 25
℃
Reverse Recovery Charge
Qrr
I
RRM
—
—
dI
F
/dt=100A/us,
V
GS
=0V
Reverse Recovery Current
—
—
Pulse width tp
≤
300
µ
s,
δ≤
2%
Parameter
Typ.
Symbol
Units
Junction-to-Case
R
2.98
62.5
℃
/W
℃
/W
θ
JC
Junction-to-Ambient
R
θ
JA
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10mH, I
D
=10.5A, Start T
J
=25
℃
a3
：
I
SD
=12A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Characteristics Curve
：
1 0 0
48
36
24
12
0
1 0
1
100us
1ms
10
m
s
OPER
A
T
ION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX R
A
TED
0 .1
T
C
=25
℃
Single Pulse
DC
0 .0 1
0
25
50
75
100
125
150
1
1 0
V d s
, D
r
a in -to -S o u rc e
V o lta g e
, V
o lts
1 0 0 0
1 0 0
TC , Case Temperature , C
Figure
1 Maximum
Forward Bias Safe Operating Area
Figure
24
2
Maximum Power Dissipation vs Case Temperature
18
12
6
250us Pluse Test
Tc = 25
℃
V
GS
=10V
18
12
6
V
GS
=7V
V
GS
=5V
V
GS
=6V
V
GS
=4.5V
0
0
0
0
25
75
TC , Case Temperature , C
3 Maximum
Continuous Drain Current vs Case Temperature
100
125
150
50
5
10
Vds , Drain-to-Source Voltage , Volts
Figure Typical
Output Characteristics
15
20
25
Figure
4
Figure
5 Maximum
Effective Thermal Impendance , Junction to Case
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
16
12
8
30
25
250us Pulse Test
V
DS
=20V
20
15
+150
℃
+25
℃
+25
℃
10
5
+150
℃
4
0
0
2
4
6
8
10
0
0.2
7
0.4
0.6
0.8
1
1.2
Vgs , Gate to Source Voltage , Volts
Vsd , Source – Drain Voltage , Volts
Figure
Typical Body Diode Transfer Characteristics
Figure
6
Typical Transfer Characteristics
2.5
2.25
2
1.0
0.9
0.8
0.7
0.6
PULSE DUR
A
T
ION
= 10
μ
s
DUTY CYCLE=
0.5%MAX
VGS=10V ID=3.5A
PULSE DUR
A
T
ION
= 10
μ
s
DUTY CYCLE=
0.5%MAX
Tc =25
℃
V
GS
=10V
1.75
1.5
1.25
1
0.75
0.5
0
3
6
9
12
-50
0
50
Tj, Junction temperature , C
100
150
Id , Drain Current , Amps
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
1.15
1.05
0.95
0.85
0.75
1.15
1.1
1.05
1
0.95
0.9
VGS=0V
ID=250
μ
A
0.85
0.8
0.75
0.7
0.65
-55 -30
-5
20
45
70
95 120
145 170
-75 -50 -25
0
25 50 75
100 125 150 175
Tj, Junction temperature , C
Tj, Junction temperature , C
Figure 11 Typical
Breakdown
V
o
ltage vs Junction Temperature
Figure 10 Typical
Theshold
V
o
ltage vs Junction Temperature
12
VDS=520V
VDS=325V
10
Ciss
VDS=130V
8
6
4
Coss
Crss
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2
I
D
=12A
0
0
10
20
30
40
50
Qg , Total Gate Charge , nC
Figure 13 Typical
Gate Charge vs Gate to Source
V
o
ltage
Figure 12 Typical
Capacitance vs Drain to Source
V
o
ltage
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
T
e
st Circuit and Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Package Information
TO-220F
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
A3
b
b1
b2
c
4.300
4.700
0.169
0.185
1.300 REF.
0.051 REF.
2.800
2.500
0.500
1.100
1.500
0.500
9.960
14.800
3.200
2.900
0.750
1.350
1.750
0.750
10.360
15.200
0.110
0.098
0.020
0.043
0.059
0.020
0.392
0.583
0.126
0.114
0.030
0.053
0.069
0.030
0.408
0.598
D
E
e
F
Ф
h
2.540 TYP.
2.700 REF.
3.500 REF.
0.100 T
Y
P
.
0.106 REF.
0.138 REF.
0.000
0.300
0.000
0.012
h1
h2
L
L1
L2
0.800 REF.
0.500 REF.
0.031 REF.
0.020 REF.
28.000
1.700
1.900
28.400
1.900
2.100
1.102
0.067
0.075
1.118
0.075
0.083
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY12N65F
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
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photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA
XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
Shenzhen HuaXuanYang Electronics CO.,LTD
