HXY-MOSFET-HXY150N03NF
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HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The
HXY150N03NF
uses advanced trench technology
G
S
S
to provide excellent
R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
S
D
D
D
D
G
S
S
S
“
Pin 1
Battery protection or in other Switching application.
DFN5X6-8L
General Features
V
DS
= 30V
I
D
=150A
D
!
R
DS
(
O
N
)
< 2.4
m
Ω
V
GS
=10V
“
! ”
“
!
G
“
Application
!
S
Battery protection
N-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
DFN5X6-8L
150N03 XXX YYYY
5000
HXY150N03NF
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Sou
r
ce Voltage
30
±
20
150
80
V
V
V
GS
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
160
180
A
mJ
A
I
AS
60
T
o
tal Power Dissipation
4
187
W
P
D
@T
C
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
℃
℃
T
J
R
θ
JA
R
θ
JC
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
62
℃
/W
℃
/W
1.1
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=30A
0.014
2
—
V/
℃
2.4
3.2
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=15A
2.
5
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=30A
50
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
56.9
13.8
23.5
20.1
6.3
—
V
DS
=15V , V
GS
=10V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
,
—
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
124.6
15.8
4345
340
225
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
150
1.2
Unit
A
I
S
Continuous Source Current
1,6
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=60A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
8
V
DS
=15V
I
D
=15A
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
2
0
0
0
40
80
120
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
0.001
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
DFN5X6-8L Package Information
MM
NOM
5
4.9
6
5.75
0.95
0.254REF
4
0.4
1.27TYP
10°
INCH
SYMBOL
MIN
MAX
5.05
4.98
6.02
5.83
1
MIN
0.195
0.190
0.235
0.223
0.035
NOM
0.197
0.193
0.236
0.226
0.037
0.010REF
0.157
0.016
0.5TYP
10°
MAX
0.199
0.196
0.237
0.230
0.039
A
A1
D
D1
B
4.95
4.82
5.98
5.67
0.9
B1
C
3.95
0.35
4.05
0.45
0.156
0.014
0.159
0.018
C1
C2
Ɵ
1
L1
L2
L3
H
8°
0.63
1.2
3.415
0.24
12°
0.65
1.4
3.425
0.26
8°
12°
0.64
1.3
3.42
0.25
0.025
0.047
0.134
0.009
0.025
0.051
0.135
0.010
0.026
0.055
0.135
0.010
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY150N03NF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
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applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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in such applications.
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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