HXY-MOSFET-HXY2309I
| Part # | HXY-MOSFET-HXY2309I |
Download  | HXY-MOSFET-HXY2309I |
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The
HXY
2309
I
uses advanced trench technology and design to
provide excellent R
DS(ON)
with low gate charge .This device is
well suited for use as a load switch or in PWM applications.
D
S
G
General Features
V
DS
=-60V,I
D
=-2A
SOT-23
R
DS(ON)
<160m
Ω
@ V
GS
=-10V
R
DS(ON)
<200m
Ω
@ V
GS
=-4.5V
D
Application
Load switch
G
PWM application
S
P-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
HXY2309I
SOT
–
23
N9ADE
3000
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
-60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±20
V
V
GS
Drain Current-Continuous
-2
A
I
D
Drain Current-Pulsed
(Note 1)
-8
A
I
DM
Maximum Power Dissipation
1.5
W
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
83.3
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-60
–
–
–
–
V
–
–
-1
μ
A
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-10V, I
D
=-1.5A
V
GS
=-4.5V, I
D
=-1.5A
V
DS
=-5V,I
D
=-1.5A
-1.4
-2.0
140
160
3
-2.6
160
200
–
V
–
–
–
m
Ω
m
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
444.2
19.6
17.9
–
–
–
PF
PF
PF
V
DS
=-30V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
40
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-30V, I
D
=-1.5A
，
V
GS
=-10V,R
G
=3
Ω
Turn-Off Delay Time
15
Turn-Off Fall Time
10
Total Gate Charge
Q
g
Q
gs
Q
gd
11.3
2.7
1.6
V
DS
=-30,I
D
=-1.5A,
Gate-Source Charge
V
GS
=-10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=-1.5A
–
–
–
–
-1.2
-1.6
V
A
–
t
rr
T
J
= 25°C, I
F
=- 1.5A
di/dt = -100A/
μ
s
(Note3)
25
31
nS
nC
Reverse Recovery Charge
Qrr
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Test Circuit
1
）
E
AS
test Circuit
2
）
Gate charge test Circuit
3
）
Switch Time Test Circuit
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics (Curves)
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
–
I
D
– Drain Current (A)
-Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 ID Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY2309I
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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