HXY-MOSFET-HXY3400AI
| Part # | HXY-MOSFET-HXY3400AI |
Download  | HXY-MOSFET-HXY3400AI |
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
The
uses advanced trench technology
HXY3400AI
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
S
Battery protection or in other Switching application.
G
General Features
SOT-23
V
DS
= 30V
I
D
=5
.
8A
PIN2 D
!
R
DS(ON)
< 30mΩ @ V
GS
=10V
“
! ”
“
!
PIN1 G
Application
“
!
Battery protection
PIN3 S
Load switch
N-Channel MOSFET
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
HXY3400AI
SOT-23
A09T
3000
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
30
V
V
DS
±12
5.8
V
A
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed
(Note 1)
30
A
I
DM
Maximum Power Dissipation
1.4
W
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
89
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
Condition
Min Typ
Max Unit
V
GS
=0V I
D
=250μA
V
DS
=30
V
,
V
GS
=0V
V
GS
=±12
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5
V
,
I
D
=4A
V
GS
=4.5
V
,
I
D
=5A
V
GS
=10
V
,
I
D
=5.8A
V
DS
=5
V
,
I
D
=5A
30
33
–
–
V
–
–
1
μA
nA
V
I
GSS
–
±100
1.4
V
GS(th)
0.7
–
0.9
mΩ
mΩ
mΩ
S
41
55
–
32
42
30
–
Drain-Source On-State Resistance
R
DS(ON)
–
28
Forward Transconductance
Input Capacitance
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
10
–
–
825
100
78
3.3
4.8
26
4
–
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
V
DS
=15
V
,
V
GS
=0
V
,
F=1.0MHz
Output Capacitance
–
–
Reverse Transfer Capacitance
Turn-on Delay Time
–
–
–
–
Turn-on Rise Time
–
–
V
DD
=15
V
,
R
L
=2.7Ω
V
GS
=10
V
,
R
GEN
=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
t
d(off)
t
f
–
–
–
–
–
T
o
tal Gate Charge
Q
g
–
10
1.6
3.1
–
V
DS
=15
V
,
I
D
=5.8A,
V
GS
=4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
V
SD
I
S
–
–
–
–
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
GS
=0
V
,
I
S
=5.8A
–
1.2
5.8
–
–
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
G
10%
90%
S
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
.
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3400AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
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applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
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