HXY-MOSFET-HXY3401AI
| Part # | HXY-MOSFET-HXY3401AI |
Download  | HXY-MOSFET-HXY3401AI |
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The
uses advanced trench technology
HXY3401AI
to provide excellent R
DS(ON)
, This device is suitable
for use as a load switch or in PWM applications.
General Features
D
S
G
SOT-23
V
DS
= -30
V
,
I
D
= -4.2A
R
DS(ON)
< 55mΩ @ V
GS
=-10V
R
DS(ON)
< 75mΩ @ V
GS
=-4.5V
D
Application
G
Battery protection
S
Load switch
P-Channel MOSFET
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
HXY3401AI
SOT
–
23
A19T
3000
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±12
V
V
GS
Drain Current-Continuous
-4.2
A
I
D
Drain Current-Pulsed
(Note 1)
-30
A
I
DM
Maximum Power Dissipation
1.2
W
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
104
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
Condition
Min Typ
Max Unit
V
GS
=0V I
D
=-250μA
V
DS
=-24
V
,
V
GS
=0V
V
GS
=±10
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10
V
,
I
D
=-4.2A
V
GS
=-4.5
V
,
I
D
=-4A
V
GS
=-2.5
V
,
I
D
=-1A
V
DS
=-5
V
,
I
D
=-4.2A
-30
–
V
–
–
-1
μA
nA
V
I
GSS
–
–
±100
V
GS(th)
-0.7
-1
45
56
72
10
880
105
65
7
-1.3
–
–
55
75
90
–
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
R
DS(ON)
Forward Transconductance
Input Capacitance
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
–
–
–
–
–
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
DS
=-15
V
,
V
GS
=0
V
,
F=1.0MHz
Output Capacitance
–
Reverse Transfer Capacitance
Turn-on Delay Time
–
–
Turn-on Rise Time
3
–
V
DD
=-15
V
,
I
D
=-4.2A V
GS
=-
10
V
,
R
GEN
=6Ω
Turn-Off Delay Time
t
d(off)
t
f
30
12
8.5
1.8
2.7
–
Turn-Off Fall Time
–
T
o
tal Gate Charge
Q
g
–
V
DS
=-15
V
,
I
D
=-4.2A,V
GS
=-
4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
–
–
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0
V
,
I
S
=-4.2A
–
–
-1.2
V
Notes:
1
、
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
、
Surface Mounted on FR4 Board, t ≤ 10 sec.
3
、
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4
、
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 2 Drain Current
Figure 1 Power Dissipation
I
D
– Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 4 Drain-Source On-Resistance
Figure 3 Output Characteristics
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 5 Transfer Characteristics
Figure 6 Drain-Source On-Resistance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 7 Rdson vs Vgs
Figure 8 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3401AI
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
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characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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