HXY-MOSFET-HXY3404MI

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Description  

The  

HXY3404MI

uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 4.5

V

. This  

device is suitable for use as a  

D

S

G

Battery protection or in other Switching application.  

SOT23-3L  

General Features  

V

DS

= 30V

 

I

D

=5A  

R

DS(ON)

< 28

m

Ω

@ V

GS

=10V  

PIN2 D  

!

“

Application  

! ”  

“

!

PIN1 G  

“

Battery protection  

!

PIN3 S  

Load switch  

Uninterruptible power supply  

N-Channel MOSFET  

Package Marking and Ordering Information  

Product ID  

Pack  

Marking  

Qty(PCS)  

SOT23-3L  

X4HV  

3000  

HXY3404MI  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

symbol  

V

DS  

V

GS  

I

D  

parameter  

Drain-source voltage  

Gate-source voltage  

limit  

unit  

V

30  

±20  

V

Drain current-continuous

a

@Tj=125

℃

 

-pulse

d

b  

5

20  

A

IDM  

Is  

A

Drain-source Diode forward current  

Maximum power dissipation  

5

A

P

D  

1.4  

W

Tj  

Operating junction

T

e

mperature range  

Thermal Resistance junction-to ambient  

-55—150  

100  

℃

Rth JA  

℃

/W  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Electrical Characteristics

(TA=25 unless

 

otherwise noted)  

℃

Parameter  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage  

Symbol  

BV

DSS  

IDSS  

Condition  

V

GS

=0

V

,

I

D

=250µA  

V

DS

=30

V

,

V

GS

=0V  

V

DS

=0

V

,

V

GS

=±20V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10

V

,

I

D

=5A  

Min  

30  

–

Typ  

–

Max  

–

Unit  

V

–

1

µA  

nA  

V

IGSS  

–

–

±100  

2

.

2  

28  

Gate threshold voltage  

VGS(th)  

1.4  

24  

0

.

8  

–

Drain-source on-state resistance  

RDS(ON)  

mΩ  

S

V

GS

=4.5

V

,

I

D

=4A  

V

GS

=5

V

,

I

D

=5A  

26  

33  

32  

–

Forward transconductance  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

gfs  

C

ISS  

–

255  

45  

V

DS

=15V ,V

GS

=0V  

f=1.0MHz  

COSS  

CRSS  

tD(ON)  

tr  

pF  

35  

4.5  

–

–

–

–

–

–

–

–

–

2.5  

–

V

DS

=15V V

GS

=10V  

R

L

=2.6 ohm  

R

GEN

=3ohm  

ns  

Turn-off delay time  

Fall time  

tD(OFF)  

tf  

14.5  

3.5  

–

–

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

Diode forward voltage  

Qg  

5.2  

–

Qgs  

0.85  

1.3  

–

–

V

DS

=15

V

,

I

D

=5.8A  

V

GS

=10V  

nC  

V

Qgd  

V

SD  

V

GS

=0

V

,

Is=1A  

0.76  

1.16  

Notes:  

1

、

surface mounted on FR4 board,t≤10sec  

2

、

pulse test: pulse width≤300μs,duty≤2%  

3

、

guaranteed by design, not subject to production testing  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Typical Performance Characteristics  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

SOT23

–

3L Package Information  

Dimensions in Millimeters  

Symbol  

MIN.  

MAX.  

1.250  

0.100  

1.150  

0.500  

0.200  

3.000  

1.700  

2.950  

A

A1  

A2  

b

1.050  

0.000  

1.050  

0.300  

0.100  

2.800  

1.500  

2.650  

c

D

E

E1  

e

0.950TYP  

0.550REF  

e1  

L

1.800  

2.000  

L1  

0.300  

0°  

0.600  

8°  

θ

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

HXY3404MI  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Attention  

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