HXY-MOSFET-HXY3N10AI
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HUAXUANYANG
HXY
HXY3N10
A
I
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The
uses advanced trench technology
HXY3N10
A
I
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
SOT-23
General Features
V
DS
= 100V
I
D
=3 A
PIN2 D
!
R
DS(ON)
< 248mΩ @ V
GS
=10V
Application
“
! ”
“
!
PIN1 G
“
!
Battery protection
PIN3 S
N-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOT-23
MA4
3000
HXY3N10
A
I
Absolute Maximum Ratings (TC=25
℃
unless otherwise specified)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
100
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
3
A
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
1
5
1
A
T
o
tal Power Dissipation
3
W
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
-55 to 150
125
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
R
θ
JC
℃
/W
℃
/W
80
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3N10
A
I
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=1A
Min.
100
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
0.067
210
244
—
△
BV
DSS
/
△
T
J
V/
℃
—
248
290
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=0.5A
—
m
Ω
V
GS(th)
Gate Threshold Voltage
1.0
—
1.5
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
-4.2
mV/
℃
I
DSS
I
DSS
I
GSS
gfs
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
5
uA
uA
nA
S
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
GS
=
±
20V , V
DS
=0V
—
±
100
—
V
DS
=5V , I
D
=1A
2.4
2.8
9.7
1.6
1.7
1.6
19
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
5.6
13.6
2.2
2.4
3.2
34
Q
g
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=80V , V
GS
=10V , I
D
=1A
nC
ns
Turn-On Delay Time
V
DD
=50V , V
GS
=10V ,
R
G
=3.3
Rise Time
T
d(off)
T
f
Turn-Off Delay Time
13.6
19
27
I
D
=1A
Fall Time
38
C
iss
C
oss
C
rss
I
S
Input Capacitance
508
29
711
41
Output Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Reverse Transfer Capacitance
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
16.4
—
23
1.2
5
A
A
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
t
rr
—
1.2
—
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
14
nS
nC
I
F
=1A
,
dI/dt=100A/µs
,
Q
rr
9.3
—
T
J
=25
℃
Note :
1
.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4 .The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3N10
A
I
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
265
260
255
250
245
5.0
4.0
3.0
2.0
1.0
0.0
I
D
=1A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
2
4
6
8
10
0
0.5
1
1.5
2
2.5
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
2
1.6
1.2
0.8
0.4
0
T
J
=150
℃
T
J
=25
℃
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.4
1.8
2.0
1.6
1.2
0.8
0.4
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3N10
A
I
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
1000
100
10
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
10ms
100ms
0.10
1s
Coss
Crss
0.01
DC
T
A
=25
℃
Single Pulse
0.00
1
5
9
13
17
21
25
0.1
1
10
V
DS
(V)
100
1000
V
DS
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3N10
A
I
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
HXY3N10AI
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
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applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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