HXY-MOSFET-IRF630-HXY
| Part # | HXY-MOSFET-IRF630-HXY |
Download  | HXY-MOSFET-IRF630-HXY |
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The IRF630 uses advanced trench technology
and design to provide excellent R
DS
(
O
N
)
with low gat
S
e charge. It can be used in a wide variety of
applications.
D
G
TO-220
General Features
V
DS
=200V,I
D
=9A
PIN2 D
!
R
DS
(
O
N
)
< 260m
@ V
GS
=10V
Ω
“
! ”
“
!
PIN1 G
“
Application
!
PIN3 S
High efficiency switch mode power supplies
N-Channel MOSFET
Power factor correction
Electronic lamp ballast
Package Marking and Ordering Information
Product ID
Pack
Marking
Units Tube
TO-220
50
IRF630
HXY IRF630 YYYY
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
200
+20
V
V
A
Drain Current
9
I
D
@T
C
=25
℃
IDM
Pulsed Drain Current
1
36
75
A
T
o
tal Power Dissipation
W
P
D
@T
C
=25
℃
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
-55 to 150
-55 to 150
℃
℃
TSTG
T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(Note 1)
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
200
–
–
–
–
1
V
V
DS
=200V,V
GS
=0V
GS
=±20V,V
DS
=0V
–
–
μA
nA
I
GSS
V
±100
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
GS
=10V, I
D
=5A
V
DS
=15V,I
D
=4.5A
2.0
–
–
4.0
260
–
V
mΩ
S
V
220
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
R
DS(ON)
g
FS
5
C
lss
C
oss
C
rss
–
–
–
600
90
–
–
–
PF
PF
PF
V
DS
=25V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
10
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
10
20
25
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=100V,
I
D
=9A
,V
GS
=10V
(Note 2)
R
G
=12Ω
Turn-Off Delay Time
Turn-Off Fall Time
15
13
4
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=100V,
I
D
=9A,
GS
=10
V
(Note 2)
Gate-Source Charge
V
Gate-Drain Charge
4.5
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=9A
–
–
1.5
9
V
A
–
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Electrical
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Package Information
TO-220
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180
0.185
1.30 1.33 0.050 0.051
0.052
2.40 2.50 0.093 0.094
0.098
0.80 0.90 0.030 0.031
0.035
1.27 1.36 0.046 0.050
0.054
0.50 0.56 0.019 0.020
0.022
A
A1
A2
b
b2
c
15.40 15.60
15.80 0.606 0.614
0.622
D
9.00
0.05
9.80
–
9.10 9.20 0.354 0.358
0.362
0.10 0.20 0.002 0.004
0.008
10.00 10.20 0.386
0.394 0.402
D1
DEP
E
E1
E2
8.70
–
–
0.343
–
9.80
10.00 10.20 0.386
0.394 0.402
2.54 BSC
5.08 BSC
6.50 6.60
0.100 BSC
0.200 BSC
e
e1
H1
L
6.40
0.252 0.256 0.260
12.75 13.50
13.65 0.502 0.531 0.537
–
3.10 3.30
2.50 REF
–
0.122 0.130
0.098 REF
L1
L2
P
3.50
3.50
2.73
5
°
3.60 3.63
3.60 3.63
2.80 2.87
0.138 0.142 0.143
0.138 0.142 0.143
0.107 0.110 0.113
P1
Q
7
°
3
°
3
°
9
°
5
°
5
°
5
°
1
°
1
°
7
°
3
°
3
°
9
°
5
°
5
°
θ
1
θ
2
θ
3
1
°
1
°
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF630
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
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products fail with some probability. It is possible that these probabilistic failures could
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