HXY-MOSFET-IRF8707TRPBF-HXY
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HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The
uses advanced trench technology
IRF8707TRPBF
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
D
D
D
G
S
Battery protection or in other Switching application.
S
S
General Features
SOP-8
V
DS
= 30V
I
D
=13A
R
DS(ON)
< 13mΩ @ V
GS
=10V
Application
PIN2 D
!
“
Battery protection
! ”
“
!
PIN1 G
“
Load switch
!
Uninterruptible power supply
PIN3 S
N-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
3000
IRF8707TRPBF
SOP-8
4406 XXX YYYY
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
30
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current
1
13
A
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
1
Pulsed Drain Current
2
7
41
15
A
EAS
Single Pulse Avalanche Energy
3
T
o
tal Power Dissipation
4
mJ
W
12
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
-55 to 150
85
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
(t≤10s)
Thermal Resistance Junction-ambient
1
℃
℃
/W
℃
/W
R
θ
JA
25
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=7A
0.034
9.5
15
—
V/
℃
13
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=4A
19
V
GS(th)
Gate Threshold Voltage
1.4
-3.84
—
2.5
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=7A
6.2
1.04
6
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.1
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
8.4
V
DS
=15V , V
GS
=4.5V , I
D
=7A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
2.2
2
3.1
2.8
1.2
40
2.4
V
DD
=15V , V
GS
=10V , R
G
=3.3
72.0
36.0
14.4
1316
167.8
122.6
I
D
=7A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
18
7.2
783
127
89
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
7
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
35
1.2
—
A
—
—
V
—
7.2
2.9
nS
nC
I
F
=7A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=20A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
35
30
25
20
15
10
5
24
22
20
18
16
14
I
D
=7A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
0
0
1
2
3
4
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
10
8
35
V
DS
=15V
I
D
=7A
30
25
20
15
10
5
6
4
T
J
=150
℃
T
J
=25
℃
2
0
0
0
3
6
9
12
15
0
0.3
0.6
0.9
1.2
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
1000
100
10
100.00
10.00
1.00
Ciss
100us
1ms
10ms
Coss
Crss
100ms
0.10
T
A
=25
o
C
Single Pulse
DC
F=1.0MHz
0.01
1
1
4
7
10
13
16
19
22
0.01
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
A
+P
D
M
XR
θJA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SOP-8 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
0.069
0.010
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF8707TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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XUAN YANG ELECTRONICS CO.,LTD.
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