HXY-MOSFET-IRF9388TRPBF-HXY
| Part # | HXY-MOSFET-IRF9388TRPBF-HXY |
Download  | HXY-MOSFET-IRF9388TRPBF-HXY |
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The IRF9388TRPB
F
u
ses
advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
D
D
D
G
S
S
S
Battery protection or in other Switching application.
SOP-8
General Features
V
DS
= -30V
I
D
= -12A
R
DS(ON)
< 13mΩ@ V
GS
=-10V
Application
D
G
Battery protection
S
Load switch
P-Channel MOSFET
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOP-8
4407 XXXX
3000
IRF9388TRPBF
Absolute Maximum Ratings
(Tc=25
℃
unless otherwise noted )
Symbol Parameter
Drain-Source Voltage
Rating
-30
Units
V
DS
V
GS
V
V
A
Gate-Source Voltage
+20
Drain Current
3
, V
GS
@ 10V
-12
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
Drain Current
3
, V
GS
@ 10V
-9.1
A
Pulsed Drain Current
1
T
o
tal Power Dissipation
-40
2.5
A
I
DM
W
P
D
@T
A
=25
℃
Storage
T
emperature Range
-55 to 150
-55 to 150
50
℃
℃
T
STG
T
J
Operating Junction
T
emperature Range
Rthj-a
Maximum Thermal Resistance, Junction-
ambient
3
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
T
e
st Conditions
Min. Typ. Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0
V
,
I
D
=-250uA
-30
–
–
–
V
R
DS(ON)
Static Drain-Source On-
Resistance
2
V
GS
=-10
V
,
I
D
=-10A
V
GS
=-4.5
V
,
I
D
=-6A
V
DS
=V
GS
, I
D
=-250uA
10
13
m
Ω
–
15
–
25
m
Ω
Gate Threshold Voltage
-1
-2.5
V
V
GS(th)
g
fs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
T
o
tal Gate Charge
V
DS
=-10
V
,
I
D
=-10A
V
DS
=-24
V
,
V
GS
=0V
V
GS
=+20
V
,
V
DS
=0V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
22
–
–
S
I
DSS
I
GSS
Q
g
-10
uA
–
+100 nA
I
D
=-6A
28
7
45
–
nC
nC
nC
ns
ns
ns
ns
V
DS
=-15V
V
GS
=-4.5V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
11
13
10
80
37
–
V
DS
=-15V
I
D
=-1A
–
t
d(on)
t
r
–
R
G
=3.3
Ω
V
GS
=-10V
Turn-off Delay Time
Fall Time
–
t
d(off)
t
f
–
C
iss
C
oss
C
rss
R
g
Input Capacitance
2940 4700
pF
V
GS
=0V V
DS
.
=-
15V f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
290
210
6.2
–
–
–
pF
pF
Ω
f=1.0MHz
12.4
-1.2
–
V
SD
t
rr
Forward On Voltage
2
Reverse Recovery Time
I
S
=-2.1A, V
GS
=0V
V
19
ns
I
S
=-10A,
V
GS
=0
V
,
dI/dt=100A/µs
Q
rr
Reverse Recovery Charge
–
6
–
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 125
℃
/W when mounted on Min. copper pad.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
40
40
30
20
10
0
T
A
=25
o
C
-10V
T
A
=150
o
C
-10
-8.0V
-7.0V
-8.0V
-7.0
-6.0V
-5.0
-4.5V
30
-6.0V
-5.0V
-4.5V
V
G
=-4.
0
V
G
=-4.
0
V
20
10
0
0
1
2
3
4
5
0
1
2
3
4
5
-V
DS
, Drain-to-Source
V
o
ltage (V)
–
V
DS
, Drain-to-Source
V
o
ltage (V)
Fig 2
Typical Output Characteristics
Fig 1. Typical Output Characteristics
.
2.0
I
D
=-10A
V
G
=-10V
20
16
12
8
I
D
=-6A
T
A
=25
o
C
1.6
1.2
0.8
0.4
.
-100
-50
0
50
100
150
2
4
6
8
10
T
j
, Junction
T
emperature (
o
C)
-V
GS
, Gate-to-Source
V
o
ltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction
T
e
mperature
2.0
10
I
D
= -1mA
1.6
8
T
j
=25
o
C
T
j
=150
o
C
1.2
0.8
0.4
0.0
6
4
2
-100
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
j
, Junction
T
emperature (
o
C)
–
-V
SD
, Source-to-Drain Voltage (V)
Fig 6. Gate Threshold
V
o
ltage v.s.
Junction
T
e
mperatur
Reverse Diode
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
8
6
4
2
0
f=1.0MHz
5000
4000
3000
2000
1000
I
D
= -6A
V
DS
= -15V
C
iss
C
oss
C
rss
0
0
10
20
30
40
50
1
5
9
13
17
21
25
29
33
37
Q
G
,
T
o
tal Gate Charge (nC)
-V
DS
, Drain-to-Source
V
o
ltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
-V
DS
, Drain-to-Source
V
o
ltage (V)
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
16
40
30
20
10
0
V
DS
= -10V
12
8
T
j
=150
o
C
T
j
=2
5
o
C
4
0
0
1
2
3
4
5
6
25
50
75
100
125
150
T
A
, Ambient
T
emperature (
o
C )
-V
GS
, Gate-to-Source
V
o
ltage (V)
Fig 12. Drain Current v.s. Ambient
Temperature
Fig 11. Transfer Characteristics
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
2
1.6
1.2
0.8
0.4
0
3
2.5
2
I
D
= -1mA
1.5
1
0.5
0
0
50
100
150
-100
-50
0
50
100
150
T
A
, Ambient
T
emperature(
o
C)
T
, Junction
T
emperature (
o
C)
j
Fig 14.
T
o
tal Power Dissipation
Fig 13. Normalized BV
DSS
v.s.
Junction
T
e
mperature
100
T
j
=25
o
C
80
60
40
20
0
-4.5V
V
GS
= -10V
0
10
20
30
40
50
-I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State Resistance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SO
P-8
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
0.069
0.010
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRF9388TRPBF
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein
are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA
XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
Shenzhen HuaXuanYang Electronics CO.,LTD
