HXY-MOSFET-IRFP450-HXY

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Description  

IRFP450  

The  

uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 4.5

V

. This  

device is suitable for use as a  

Battery protection or in other Switching application.  

TO-247  

General Features  

V

DS

= 500V

 

I

D

= 14A  

PIN2 D  

!

R

DS(ON)

< 0.5Ω@ V

GS

=10V  

Application  

“

! ”  

“

!

PIN1 G  

“

!

PIN3 S  

Battery protection  

N-Channel MOSFET  

Load switch  

Uninterruptible power supply  

Package Marking and Ordering Information  

Product ID  

Pack  

Marking  

Qty(PCS)  

TO-247  

30  

IRFP450  

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

V

DS  

Parameter  

Rating  

Units  

Drain-Source Voltage  

500  

V

V

V

GS  

±

20  

Gate-Sou

r

ce Voltage  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

14  

A

A

I

D

@T

C

=25

℃  

8.7  

I

D

@T

C

=100

℃  

I

DM  

EAS  

Pulsed Drain Current

2  

Single Pulse Avalanche Energy

3  

Avalanche Current  

56  

760  

8.7  

A

mJ  

A

I

AS  

T

o

tal Power Dissipation

4  

190  

W

P

D

@T

C

=25

℃  

T

STG  

T

J  

Storage

T

e

mperature Range  

Operating Junction

T

e

mperature Range  

Maximum Junction-to-Ambient  

-55 to 150  

-55 to 150  

40  

℃

℃

R

thJA  

R

thJC  

℃

/W  

℃

/W  

Maximum Junction-to-Case (Drain)  

0.65  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN.  

TYP.  

MAX.  

UNIT  

Static  

Drain-Source Breakdown Voltage  

V

DS

Temperature Coefficient  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

V

DS  

Δ

V

DS

/T

J  

V

GS(th)  

I

GSS  

V

GS

= 0 V, I

D

= 250 µA  

Reference to 25 °C, I

D

= 1 mA  

V

DS

= V

GS

, I

D

= 250 µA  

V

GS

= ± 20 V  

500  

–

–

–

V

V/°C  

V

–

0.63  

2.0  

–

–

–

–

4.0  

± 100  

25  

–

–

nA  

V

DS

= 500 V, V

GS

= 0 V  

Zero Gate Voltage Drain Current  

I

DSS  

µA  

V

–

250  

I

D

= 8.4A

b  

Ω

–

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic  

R

DS(on)  

g

fs  

V

GS

= 10 V  

V

DS

= 50 V, I

D

= 8.4 A

b  

0.43  

0.5  

9.3  

–

–

S

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

C

iss  

C

oss  

C

rss  

Q

g  

–

–

–

–

–

–

–

–

–

–

2600  

720  

340  

–

–

V

GS

= 0 V,  

V

DS

= 25 V,  

f = 1.0 MHz, see fig. 5  

–

pF  

–

150  

20  

80  

–

I

see fig. 6 and 13

b  

Q

gs  

Q

gd  

t

d(on)  

t

r  

V

–

nC  

–

17  

47  

92  

44  

–

V

DD

= 250 V, I

D

= 14 A,  

ns  

Turn-Off Delay Time  

Fall Time  

t

d(off)  

t

f  

R

G

= 6.2

Ω

, R

D

= 17

Ω

, see fig. 10

b  

–

–

D

Between lead,  

Internal Drain Inductance  

L

D  

L

S  

–

–

5.0  

13  

–

–

6 mm (0.25″) from  

package and center of  

die contact  

nH  

G

Internal Source Inductance  

S

Drain-Source Body Diode Characteristics  

Continuous Source-Drain Diode Current  

MOSFET symbol  

showing the  

integral reverse  

p – n junction diode  

D

I

S  

–

–

–

–

14  

56  

A

G

Pulsed Diode Forward Current

a  

I

SM  

S

Body Diode Voltage  

V

SD  

t

rr  

T

J

= 25 °C, I

S

= 14 A, V

GS

= 0 V

b  

–

–

–

–

1.4  

810  

7.2  

V

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

Forward Turn-On Time  

540  

4.8  

ns  

µC  

T

J

= 25 °C, I

F

= 14 A, dI/dt = 100 A/µs

b  

Q

rr  

t

on  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. Pulse

 

width

≤

300 µs; duty cycle

≤

2 %.  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted  

Fig. 1 – Typical Output Characteristics, T

C

= 25 °C  

Fig. 3 – Typical Transfer Characteristics  

Fig. 2 – Typical Output Characteristics, T

C

= 150 °C  

Fig. 4 – Normalized On-Resistance vs. Temperature  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage  

Fig. 7 – Typical Source-Drain Diode Forward Voltage  

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage  

Fig. 8 – Maximum Safe Operating Area  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

R

D  

V

DS  

V

GS  

D.U.T.  

R

G  

+

–

V

DD  

10

V  

P

u

lse

w

idth

≤

1

µ

s  

D

u

ty factor

≤

0.1

%  

Fig. 10a – Switching Time Test Circuit  

V

DS  

90

%  

10

%  

V

GS  

t

d(on)

t

r  

t

d(off)

t

f  

Fig. 10b – Switching Time Waveforms  

Fig. 9 – Maximum Drain Current vs. Case Temperature  

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case  

L

V

DS  

V

DS  

t

p  

V

ary t

p

to o

b

tain  

re

qu

ired I

AS  

V

DD  

D.U.T  

R

G  

+

–

V

DD  

V

DS  

I

AS  

A

10

V

 

0.01

Ω

 

t

p  

I

AS  

Fig. 12a – Unclamped Inductive Test Circuit  

Fig. 12b – Unclamped Inductive Waveforms  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Fig. 12c – Maximum Avalanche Energy vs. Drain Current  

C

u

rrent reg

u

lator  

Same type as D.U.T.  

50 k

Ω

 

Q

G  

10

V  

12

V

 

0.2

µ

F  

0.3

µ

F  

Q

GS  

Q

GD  

+

–

V

DS  

D.U.T.  

V

G  

V

GS  

3 mA  

Charge  

I

G  

I

D  

C

u

rrent sampling resistors  

Fig. 13b – Gate Charge Test Circuit  

Fig. 13a – Basic Gate Charge Waveform  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

TO-247 Package Information  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRFP450  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

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