HXY-MOSFET-IRFR024N-HXY
| Part # | HXY-MOSFET-IRFR024N-HXY |
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HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The IRFR024N-HX
Y
u
ses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
TO252-2
L
General Features
V
DS
= 100V
I
D
= 20A
PIN2 D
!
R
DS(ON)
< 8
7
m
Ω @ V
GS
=10V
Application
“
! ”
“
!
PIN1 G
“
!
PIN3 S
Battery protection
N-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
TO252-2L
20N10 XXX YYYY
2500
IRFR024N-HXY
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol
V
DS
Parameter
Rating
100
Units
Drain-Source Voltage
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
20
10
5
A
A
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
3.4
I
D
@T
A
=70
℃
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
30
6.1
15
A
mJ
A
I
AS
T
o
tal Power Dissipation
4
34.7
W
P
D
@T
C
=25
℃
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
2
W
℃
P
D
@T
A
=25
℃
T
STG
T
J
-55 to 150
-55 to 150
62
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
R
θ
JC
℃
/W
℃
/W
3.6
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
0.098
8
0
—
V/
℃
87
m
m
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=8A
9
5
105
2.5
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.57
—
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
13
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
26.2
4.6
5.1
4.2
8.2
35.6
9.6
1535
60
—
—
—
—
—
—
—
—
—
—
V
DS
=80V , V
GS
=10V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DD
=50V , V
GS
=10V , R
G
=3.3
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
37
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
20
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
30
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
—
V
—
37
nS
nC
I
F
=10A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
27.3
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=11A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
25
20
15
10
5
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1ms
10ms
100ms
DC
Coss
Crss
21
0.10
T =25
℃
C
Single Pulse
10
0.01
1
5
9
13
17
25
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
TO-252-2L Package
Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
0.483 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
10.400
0.236
0.086
0.386
0.244
0.094
0.409
e
L
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRFR024N-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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