HXY-MOSFET-IRLML0060TRPBF-HXY

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Description  

The IRLM0060TRPBF uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 2.5

V

. This  

device is suitable for use as a  

D

S

Battery protection or in other Switching application.  

G

SOT-23  

General Features  

V

DS

= 60V

 

I

D

= 3A  

PIN2 D  

R

DS(ON)

< 89mΩ @ V

GS

=10V  

!

“

! ”  

“

!

PIN1 G  

“

Application  

!

Battery protection  

Load switch  

PIN3 S  

N-Channel MOSFET  

Uninterruptible power supply  

Package Marking and Ordering Information  

Product ID  

Pack  

Marking  

Qty(PCS)  

IRLM0060TRPBF  

SOT-23  

S10  

3000PCS  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Limit  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

60  

V

V

DS  

±20  

V

A

V

GS  

Drain Current-Continuous  

3

10  

I

D  

Drain Current-Pulsed

(Note 1)  

A

I

DM  

Maximum Power Dissipation  

1.7  

W

P

D  

Operating Junction and Storage

T

e

mperature Range  

Thermal Resistance,Junction-to-Ambient

(Note 2)  

-55

T

o

1

50  

73.5  

℃

T

J

,T

STG  

R

θJA  

℃

/W  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

Gate Threshold Voltage  

I

GSS  

V

GS

=±20V,V

DS

=0V  

–

–

±100  

nA  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=3A  

V

GS

=4.5V, I

D

=1.5A  

V

DS

=15V,I

D

=2A  

0.8  

1.3  

80  

89  

3

2.0  

89  

115  

–

V

m

Ω  

m

Ω  

S

–

–

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

C

lss  

C

oss  

C

rss  

–

–

–

510  

34  

–

–

–

PF  

PF  

PF  

V

DS

=30V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

26  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

6

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V,I

D

=1.5A  

15  

15  

10  

7.5  

1.4  

3

V

GS

=10V,R

GEN

=1Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

Gate-Source Charge  

V

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

V

SD  

I

S  

V

GS

=0V,I

S

=3A  

–

–

–

–

1.2  

3

V

A

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.  

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4.

Guaranteed by design, not subject to production  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Typical Electrical and Thermal Characteristics  

Vdd  

t

on  

t

off  

t

f  

t

r  

t

d(on)  

V

OUT  

V

IN  

t

d(off)  

Rl  

Vin  

90%  

90%  

D

Vout  

Vgs  

INVERTED  

Rgen  

10%  

G

10%  

90%  

S

50%  

50%  

10%  

PULSE WIDTH  

Figure 1:Switching Test Circuit  

Figure 2:Switching Waveforms  

T

J

-Junction

T

e

mperature(

℃

)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Power Dissipation  

Figure 4 Drain Current  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 5 Output Characteristics  

Figure 6 Drain-Source On-Resistance  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Transfer Characteristics  

Figure 8 Drain-Source On-Resistance  

Vgs Gate-Source Voltage (V)  

Vds Drain-Source Voltage (V)  

Figure 9 Rdson vs Vgs  

Figure 10 Capacitance vs Vds  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 11 Gate Charge  

Figure 12 Source- Drain Diode Forward  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Vds Drain-Source Voltage (V)  

Figure 13 Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14 Normalized Maximum Transient Thermal Impedance  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

SO

T

-23 Package Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8

°  

SO

T

-23 Suggested Pad Layout  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

IRLM0060TRPBF  

ELECTRONICS CO.,LTD  

N-Channel Enhancement Mode MOSFET  

Attention  

■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle  

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications  

whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG  

ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein  

in such applications.  

■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that  

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products  

specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.  

■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,  

characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,  

characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and  

states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the  

customer’s products or equipment.  

■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor  

products fail with some probability. It is possible that these probabilistic failures could  

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other  

property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures  

include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.  

■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein  

are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the  

export license from the authorities concerned in accordance with the above law.  

■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including  

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA  

XUAN YANG ELECTRONICS CO.,LTD.  

■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.  

HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding  

its use or any infringements of intellectual property rights or other rights of third parties.  

■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.  

When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.  

Shenzhen HuaXuanYang Electronics CO.,LTD