HXY-MOSFET-IRLR8726TRPBF-HXY
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HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The IRLR8726TRPBF uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
Battery protection or in other Switching application.
TO252-2
L
General Features
V
DS
= 30V
I
D
=100 A
PIN2 D
R
DS(ON)
< 5mΩ @ V
GS
=10V
Application
!
“
! ”
“
!
“
Battery protection
!
Load switch
PIN3 S
Uninterruptible power supply
N-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
100N03
D
XXX YYYY
Qty(PCS)
TO252-2L
2500
IRLR8726TRPBF
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
Drain- Source Voltage
VDS
V
30
V
Gate-Sou
r
ce Voltage
±
20
100
57
VGS
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
A
A
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
27
23
17
14.5
I
D
@T
A
=70
℃
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
160
115.2
48
A
mJ
A
I
AS
T
o
tal Power Dissipation
4
53
W
P
D
@T
C
=25
℃
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
6
2.4
W
℃
P
D
@T
A
=25
℃
T
STG
T
J
-55 to 175
-55 to 175
62
Operating Junction
T
e
mperature Range
℃
R
θ
JA
Thermal Resistance Junction-ambient
(Steady State)
1
℃
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
25
℃
/W
℃
/W
Thermal Resistance Junction-Case
1
2.8
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min. Typ.
Max. Unit
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
D
=250uA
30
—
—
V
BVDSS
T
e
mperature
Coefficient
—
0.028
—
△
BV
DSS
/
△
T
J
Reference to 25
℃
,
I
D
=1mA
V/
℃
V
GS
=10V , I
D
=30A
—
—
3.8
7.5
5.5
9
R
DS(ON)
V
GS
=4.5V , I
D
=15A
Static Drain-Source On-
Resistance
2
m
Ω
V
GS(th)
Gate Threshold Voltage
1.0
—
1.5
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
-6.16
mV/
℃
V
DS
=24V , V
GS
=0V ,
T
J
=25
℃
—
—
—
—
1
5
I
DSS
Drain-Source Leakage Current
uA
V
DS
=24V , V
GS
=0V ,
T
J
=55
℃
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
—
—
22
nA
S
V
GS
=
±
20V , V
DS
=0V
±
100
—
V
DS
=5V , I
D
=30A
V
DS
=0V , V
GS
=0V ,
f=1MHz
1.7
3.4
Ω
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
20
7.6
7.2
7.8
15
—
—
—
—
—
—
—
—
—
—
80
160
1
V
DS
=15V , V
GS
=4.5V ,
I
D
=15A
nC
ns
V
DD
=15V , V
GS
=10V ,
R
G
=3.3
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
37.3
10.6
2295
267
210
—
I
D
=15A
C
iss
C
oss
C
rss
I
S
Input Capacitance
V
DS
=15V , V
GS
=0V ,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
pF
A
A
V
V
G
=V
D
=0V , Force
Current
I
SM
—
V
SD
V
GS
=0V , I
S
=1A ,
—
T
J
=25
℃
t
rr
Reverse Recovery Time
IF=30A , dI/dt=100A/µs ,
—
T
J
=25
℃
14
5
—
—
nS
nC
Q
rr
Reverse Recovery Charge
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width .The EAS data shows Max. rating .
3
.
The test cond
≦
300us , duty cycle ition is V
DD=25
≦
V,V 2%
GS
=10V,L=0.1mH,I
AS
=53.8A
4.The power dissipation is limited by 175
℃
junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
180
150
120
90
9
8
6
5
3
I
D
=12A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
60
30
0
0
0.5
1
1.5
2
2.5
3
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
9
I
D
=15A
T
J
=150
℃
T
J
=25
℃
6
V
DS
=15V
V
DS
=24V
6
4
3
2
0
0
0
0.3
0.6
0.9
1.2
0
6
12
18
24
30
36
42
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
-5
40
85
130
175
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
V
DS ,
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
TO252-2L Package
Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
0.483 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
10.400
0.236
0.086
0.386
0.244
0.094
0.409
e
L
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
IRLR8726TRPBF
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
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