HXY-MOSFET-MMDT3904

HUAXUANYANG  

HXY  

MMDT3904  

Dual-NPN Plastic-Encapsulate Transistors  

ELECTRONICS CO.,LTD  

FEATURES  

Epitaxial planar die construction.  

Ideal for low power amplification and switching

.  

Pin 1  

SOT-363  

Package Marking and Ordering Information  

Marking  

Pack  

Qty(PCS)  

Product ID  

3000  

MMDT3904  

SOT-363  

K6N  

Pin 1  

MA

X

IMUM RATINGS (Ta=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Value  

Unit  

V

60  

40  

Collector-Emitter Voltage  

V

Emitter-Base Voltage  

6

V

Collector Current  

200  

mA  

mW  

℃

/W  

℃

P

C  

Collector Power Dissipation  

200  

R

ΘJA  

T

J

,T

stg  

Thermal Resistance From Junction

T

o

A

mbient  

Operation Junction And Storage

T

emperature Range  

625  

-55

～

+150  

ELECTRICAL C

H

ARACTERISTICS(Ta=25

℃

unless otherwise noted)  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CEX  

Parameter  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Collector cut-off current  

Emitter cut-off current  

Test conditions  

I

C

=10µA, I

E

=0  

Min  

60  

40  

6

Typ  

Max  

Unit  

V

I

C

=1mA, I

B

=0  

V

I

E

=10µA, I

C

=0  

V

V

CE

=30V, V

EB(off)

=3V  

V

CB

=30V, I

E

=0  

50  

50  

50  

nA  

nA  

nA  

I

CBO  

I

EBO  

V

EB

=5V, I

C

=0  

h

FE

(1)  

h

FE

(2)  

h

FE

(3)  

h

FE

(4)  

h

FE

(5)  

DC current gain(1)  

V

CE

=1V, I

C

=100μA  

V

CE

=1V, I

C

=1mA  

40  

70  

DC current gain(2)  

DC current gain(3)  

V

CE

=1V, I

C

=10mA  

V

CE

=1V, I

C

=50mA  

V

CE

=1V, I

C

=100mA  

I

C

=10mA, I

B

=1mA  

I

C

=50mA, I

B

=5mA  

I

C

=10mA, I

B

=1mA  

I

C

=50mA, I

B

=5mA  

V

CE

=20V, I

C

=10mA, f=100MHz  

V

CB

=5V, I

E

=0, f=1MHz  

VCE=5V,Ic=0.1mA,f=1kHz,Rg=1KΩ  

V

CC

=3V, V

BE(off)

=0.5V,  

I

C

=10mA, I

B1

=I

B2

=1mA  

V

CC

=3V, I

C

=10mA,  

I

B1

=I

B2

=1mA  

100  

60  

300  

DC current gain(4)  

DC current gain(5)  

30  

0.2  

0.3  

V

V

V

CE(sat)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

0.65  

300  

0.85  

0.95  

V

V

BE(sat)  

V

f

T  

Cob  

NF  

t

d  

Transition frequency  

Collector output capacitance  

Noise figure  

MHz  

pF  

dB  

ns  

ns  

ns  

ns  

4

5

Delay time  

35  

35  

200  

50  

t

r  

Rise time  

t

s  

Storage time  

t

f  

Fall time  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

MMDT3904  

Dual-NPN Plastic-Encapsulate Transistors  

ELECTRONICS CO.,LTD  

Typical Characteristics  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

MMDT3904  

Dual-NPN Plastic-Encapsulate Transistors  

ELECTRONICS CO.,LTD  

SO

T

-3

6

3 Package Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.100  

0.100  

1.000  

0.350  

0.150  

2.200  

1.350  

2.4

00  

Min  

Max  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.150  

0.

100  

2.000  

1.150  

2.150  

0.035  

0.000  

0.035  

0.006  

0.00

4  

0.079  

0.045  

0.085  

0.043  

0.004  

0.039  

0.014  

0.006  

0.087  

0.053  

0.09

4  

0.650 T

Y

P  

0.525 REF  

0.026 T

Y

P  

0.021 REF  

1.200  

1.400  

0.047  

0.055  

L1  

θ

0.260  

0°  

0.460  

8°  

0.010  

0°  

0.018  

8°  

SO

T

-3

6

3 Suggested Pad Layout  

Shenzhen HuaXuanYang Electronics CO.,LTD  

HUAXUANYANG  

HXY  

MMDT3904  

Dual-NPN Plastic-Encapsulate Transistors  

ELECTRONICS CO.,LTD  

Attention  

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characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and  

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