HXY-MOSFET-SI2333CDS-HXY
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HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The
uses advanced trench technology
SI2333CDS
to provide excellent R
DS(ON)
, This device is suitable
for use as a load switch or in PWM applications.
D
S
G
General Features
SOT-23
V
DS
= -18V,I
D
= -6.5A
R
DS(ON)
< 28mΩ @ V
GS
=-4.5V
D
Application
Battery protection
Load switch
G
S
Uninterruptible power supply
P-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SI2333CDS
SOT-23
20P07
3000
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
-18
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±12
V
V
GS
Drain Current-Continuous
-6.5
A
I
D
Drain Current-Pulsed
(Note 1)
-15
A
I
DM
Maximum Power Dissipation
2
W
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
74
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
–
V
–
-18
–
–
–
–
-1
μA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-4.1A
V
GS
=-2.5V, I
D
=-3A
V
DS
=-5V,I
D
=-3.5A
-0.45 -0.7
-1.0
28
36
–
V
–
–
–
20
27
Drain-Source On-State Resistance
mΩ
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
8.5
S
C
lss
C
oss
C
rss
–
–
–
980
450
250
–
–
–
PF
PF
PF
V
DS
=-4V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-4V,I
D
=-3.3A ,
R
L
=-1.2Ω,V
GEN
=-4.5V,R
g
=1Ω
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Q
g
Q
gs
Q
gd
7.8
1.2
1.6
V
DS
=-4V,I
D
=-4.1A,V
GS
=-4.5V
V
GS
=0V,I
S
=-1.6A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
–
–
–
–
-1.2
1.6
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Characteristics
50
40
30
20
20
16
12
8
I
D
=-4A
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
V
GS
=-2.5V
V
GS
=-1.8V
4
0
1
2
3
4
5
0
0.25
0.5
0.75
1
1.25
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
0
0.4
0.8
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
-V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
P
DM
T
ON
SINGLE PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+ P
DM
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI2333CDS
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
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products fail with some probability. It is possible that these probabilistic failures could
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