HXY-MOSFET-SI4559ADY-HXY
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HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Description
The SI4559ADY uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D2
D2
D1
D1
G2
S2
G1
S1
Battery protection or in other Switching application.
SOP-8
General Features
V
DS
= 60V
I
D
=6A
R
DS(ON)
< 48mΩ @ V
GS
=10V
V
DS
= -60V
I
D
=-5A
D1
S1
D1 D2
D2
G2
R
DS(ON)
< 85
mΩ @ V
GS
=-10V
Application
G1 S2
Wireless charging
N-Channel and
P-Channel
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SI4559ADY
SOP-8
4559XXX
3000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Channel
P-Channel
-60
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
60
±20
V
V
±20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
6.0
-5.0
A
4.0
-3.5
A
11
-8.5
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
22.5
35.3
mJ
A
IAS
22.6
-26.6
P
D
@T
A
=25
℃
TSTG
T
o
tal Power Dissipation
4
2.5
2.5
W
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
-55 to 150
-55 to 150
℃
T
J
℃
R
θ
JA
85
℃
/W
℃
/W
R
θ
JC
62.5
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=60V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
60
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
1.0
1.6
40
48
2.5
48
60
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1148
58.5
49.4
20.3
3.7
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=30V, I
D
=2.5A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
5.3
Switching Characteristics
Turn-on Delay Time
–
–
–
–
7.6
20
15
24
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=30V, I
D
=5A,
R
G
=1.8Ω, V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
6
20
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=5A
–
V
Voltage
Body Diode Reverse Recovery Time
29
43
ns
nC
Body Diode Reverse Recovery
Charge
I
F
=5A, dI/dt=100A/μs
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition : T
J
=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=8.7A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-10V , I
D
=-3.5A
70
100
115
-2.5
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=-4.5V , I
D
=-3.1A
—
100
—
V
GS
=V
DS
, I
D
=-250uA
-1.0
—
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
—
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Q
g
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
nA
S
±
100
V
DS
=-5V , I
D
=-3A
—
8.5
12.1
2.2
6.3
9.2
20.1
46.7
9.4
1137
76
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=-48V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
—
pF
—
50
Continuous Source Current
1,5
Diode Forward Voltage
2
—
—
—
—
-6.0
-1.2
A
V
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
V
SD
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-24A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Typical Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
12
9
12
10V
4.5V
4V
10
8
T
J
=125
℃
6
6
25
℃
V
GS
=2V
4
3
0
2
V
GS
(V)
V
DS
(V)
0
0
0.5
1
1.5
2
2.5
0
0.8
1.6
2.4
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(mΩ)
I
S
(A)
45
1.0E+01
1.0E+00
1.0E-01
1.0E-02
40
35
V
GS
=4.5V
V
GS
=10V
I
D
(A)
125
℃
T
J
=25
℃
30
25
1.0E-03
20
15
1.0E-04
1.0E-05
V
SD
(V)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
3
10
2
10
1
10
8
V
DS
=30V
I
D
=2.5A
C
iss
6
4
C
oss
C
rss
2
0
V
DS
(V)
Q
g
(nC)
0
5
10
15
20
25
0
10
20
30
40
50
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0.8
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating
Area
Figure 10:
Maximum Continuous Drain Current vs.
Ambient Temperature
I
D
(A
)
I
D
(A
)
6
10
2
10
1
10
0
5
4
3
10μs
100
μ
s
1
s
10ms
Limited by R
DS(on)
100ms
DC
2
1
0
10
-1
10
-2
T
A
=25
℃
Single pulse
T
A
(
℃
)
V
DS
(V)
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-1
10
-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Typical Characteristics
12
V
GS
=-3V
10
8
6
V
GS
=-10V
4
V
GS
=-7V
V
GS
=-5V
2
0
V
GS
=-4.5V
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
10
I
D
=-3A
10
8
6
4
2
8
6
4
2
0
T
J
=150
℃
T
J
=25
℃
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
o
T
J
,Junction Temperature ( C)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D = T
ON
/T
SINGLE
T
Jpeak
= T
C
+P
DM
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
SOP-8 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
0.069
0.010
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SI4559ADY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
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XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
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When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
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