HXY-MOSFET-SSM3J332R-HXY
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HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The SSM3J332R uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
S
G
SOT23-3L
Battery protection or in other Switching application.
General Features
V
DS
=
–
30V I
D
=
–
4
.
2A
D
R
DS(ON)
< 54
m
Ω
@ V
GS
=10V
R
DS(ON)
< 77
m
Ω
@ V
GS
=4.5V
G
Application
S
Battery protection
Load switch
P-Channel MOSFET
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOT23-3L
3000
SSM3J332R
X1KX
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
DS
±12
-4.2
V
A
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed
(Note 1)
-30
A
I
DM
Maximum Power Dissipation
1.2
W
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
104
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
I
DSS
V
DS
=-24V,V
GS
=0V
–
–
–
–
-1
μA
nA
I
GSS
V
GS
=±10V,V
DS
=0V
±100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V,I
D
=-4.2A
-0.7
-1
46
58
74
10
-1.3
54
77
130
–
V
–
–
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
–
C
lss
C
oss
C
rss
–
–
–
880
105
65
–
–
–
PF
PF
PF
V
DS
=-15V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
7
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-15V,I
D
=-4.2A
V
GS
=-10V,R
GEN
=6Ω
3
Turn-Off Delay Time
30
12
8.5
1.8
2.7
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-4.2A,V
GS
=-4.5V
V
GS
=0V,I
S
=-4.2A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
–
–
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching
T
e
st Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SOT23-3L Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.250
0.100
1.150
0.500
0.200
3.000
1.700
2.950
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.800
1.500
2.650
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.600
8°
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SSM3J332R
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
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