IDCHIP-2N7002K
| Part # | IDCHIP-2N7002K |
Download  | IDCHIP-2N7002K |
深圳市英锐芯电子科技有限公司
N
沟
道增
强
型场
效
应
晶体管 2N7002
2N7002
N-Channel Enhancement Mode Field Effect Transistor
Drain
Features
• High density cell design for low R
DS(ON)
• Voltage controlled small signal switching
• High saturation current capability
• High speed switching
Gate
Source
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
O
Absolute Maximum Ratings
(T
a
= 25
C)
Parameter
Symbol
Value
60
Unit
V
Drain-Source Voltage
V
DSS
V
DGR
60
V
Drain-Gate Voltage (R
GS
≤
1M
Ω
)
± 20
± 40
115
800
Gate-Source Voltage
-Continuous
-Non Repetitive (tp < 50 µs)
V
V
GSS
I
D
Maximum Drain Current
-Continuous
-Pulsed
mA
Total Power Dissipation
P
tot
200
mW
O
C
Operating and Storage Temperature Range
T
J
, T
s
– 55 to + 150
O
Characteristics at
T
a
= 25
C
Parameter
Symbol
BV
DSS
I
DSS
Min.
Max.
Unit
Drain Source Breakdown Voltage
at I
D
= 10 µA
Zero Gate Voltage Drain Current
at V
DS
= 60 V
Gate-Body Leakage Current
at V
GS
= ± 20 V
Gate Threshold Voltage
at V
DS
= V
GS
, I
D
= 250 µA
On-State Drain Current
at V
GS
= 10 V, V
DS
= 7.5 V
60
–
1
V
µA
nA
V
–
–
±I
GSS
V
GS(th)
I
D(ON)
100
2.5
–
1
500
mA
Drain-Source On-Voltage
at V
GS
= 10 V, I
D
= 500 mA
at V
GS
= 5 V, I
D
= 50 mA
–
–
3.75
1.5
V
DS(ON)
V
V
Static Drain-Source On-Resistance
at V
GS
= 10 V, I
D
= 500 mA
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA
Input Capacitance
at V
DS
= 25 V, f = 1 MHz
Output Capacitance
at V
DS
= 25 V, f = 1 MHz
Reverse Transfer Capacitance
at V
DS
= 25 V, f = 1 MHz
Turn-On Time
R
DS(ON)
g
FS
–
80
–
7.5
–
Ω
mS
pF
pF
pF
ns
C
iss
C
oss
C
rss
t
on
50
25
5
–
–
–
20
20
at V
DD
= 30 V, R
L
= 150
Ω
, I
D
= 0.2 A, V
GS
= 10V, R
GEN
= 25
Ω
Turn-Off Time
at V
DD
= 30 V, R
L
= 150
Ω
, I
D
= 0.2 A, V
GS
= 10V, R
GEN
= 25
Ω
t
off
–
ns
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
