IDCHIP-MMBT3906
| Part # | IDCHIP-MMBT3906 |
Download  | IDCHIP-MMBT3906 |
深圳市英锐芯电子科技有限公司
PNP晶体管 MMBT3906
MMBT3906
TRANSISTOR
（
PNP
）
FEATURES
Complementary Type The NPN Transistor
MMBT3904 is Recommended
SOT-23
Epitaxial Planar Die Construction
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: 2A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current
-200
200
mA
mW
℃
/W
℃
P
C
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
R
θ
JA
T
J
625
150
℃
T
stg
Storage
T
e
mperature
-55 ~ +150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
I
C
=-10
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
Test conditions
Min
Max
Unit
-40
-40
-5
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)
CEO
V
V
(BR)EBO
I
E
=-10
μ
A, I
C
=0
V
I
CBO
I
CEX
V
CB
=-40
V
,
I
E
=0
-0.1
-50
µA
nA
µA
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
V
CE
=-30
V
,
V
BE(off)
=-3V
V
EB
=-5
V
,
I
C
=0
I
EBO
-0.1
300
current
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
= -50mA
V
CE
=-1
V
,
I
C
= -100mA
I
C
=-50mA,
B
= -5mA
I
C
= -50mA,
I
B
=-5mA
100
60
DC current gain
30
-0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
-0.95
300
MHz
nS
nS
nS
nS
f
T
V
CE
=-20
V
,
I
C
=-10mA,
f=
100MHz
V
CC
=-3
V
,
V
BE
=-0.5V
35
35
t
d
I
C
=-10mA, I
B1
=-I
B2
=-1mA
V
CC
=-3
V
,
I
C
=-10mA,
I
B1
=-I
B2
=-1mA
Rise Time
t
r
225
75
Storage Time
t
s
Fall Time
t
f
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
