IDCHIP-S8050-J3Y-800MA
| Part # | IDCHIP-S8050-J3Y-800MA |
Download  | IDCHIP-S8050-J3Y-800MA |
深圳市英
锐
芯电子科
技
有限
公司
NPN晶体管
S8050
S8050
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: I
C
=0.5A
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
V
CEO
V
EBO
I
C
5
V
Collector Current -Continuous
Collector Dissipation
0.5
A
0.3
W
℃
℃
P
C
Junction
T
e
mperature
Storage
T
e
mperature
150
-55-150
T
j
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 100
µA
I
E
=0
I
C
=1mA, I
B
=0
I
E
=100
µA
I
C
=0
MIN
40
25
5
TYP
MAX
UNIT
V
,
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
,
V
CB
=40 V,
I
E
=0
0.1
0.1
0.1
350
µA
µA
µA
I
CEO
V
CB
=20V, I
E
=0
Collector cut-off current
I
EBO
V
EB
= 5V,
I
C
=0
Emitter cut-off current
H
FE(1)
V
CE
=1V, I
C
= 50mA
V
CE
=1V, I
C
= 500mA
I
C
=500 mA,
I
B
= 50mA
200
50
DC current gain
H
FE(2)
V
CE
(sat)
V
BE
(sat)
0.6
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
=500 mA,
I
B
= 50mA
V
CE
=6V, I
C
= 20mA
f=
30MHz
f
T
150
MHz
Transition frequency
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
深圳市英
锐
芯电子科
技
有限
公司
NPN晶体管
S8050
Typical Characteristics
S8050
电话
：
0755
传真
：
0755
–
82568882
82568886
82568883
邮箱：
idchi
p@
ind
rea
m
ch
i
p.
c
om
–
网址：
ww
w
.idc ip.cn
h
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
