IDCHIP-S8550-2TY-800MA
| Part # | IDCHIP-S8550-2TY-800MA |
Download  | IDCHIP-S8550-2TY-800MA |
深圳市英
锐
芯电子科
技
有限
公司
PNP晶体管
S8550
S8550
TRANSISTOR (PNP)
FEATURES
SOT-23
Complimentary to S8050
Collector current: I
C
=0.5A
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING :
2TY
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
-40
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.5
A
P
C
0.3
W
℃
℃
T
j
150
T
stg
Storage
T
e
mperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= -100
µA
I
E
=0
I
C
=-1mA, I
B
=0
I
E
= -100
µA
I
C
=0
MIN
-40
-25
-5
MAX UNIT
Parameter
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
,
,
V
CB
= -40
V
,
I
E
=0
-0.1
-0.1
-0.1
350
µA
µA
µA
I
CEO
V
CE
= -20
V
,
I
B
=0
Collector cut-off current
I
EBO
V
EB
= -3
V
,
I
C
=0
Emitter cut-off current
h
FE(1)
V
CE
= -1
V
,
I
C
= -50mA
V
CE
= -1
V
,
I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
200
50
DC current gain
h
FE(2)
V
CE
(sat)
V
BE
(sat)
-0.6
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
=-500mA, I
B
= -50mA
V
CE
= -6
V
,
I
C
= -20mA
f=
30MHz
150
MHz
Transition frequency
f
T
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
