IDCHIP-S9014
| Part # | IDCHIP-S9014 |
Download  | IDCHIP-S9014 |
深圳市英
锐
芯电子科
技
有限
公司
NPN晶体管
S9014
S9014 TRANSISTOR
(NPN)
FEATURES
SOT-23
Complementary to S9015
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: J6
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
value
50
units
V
V
CBO
Collector-Base Voltage
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
V
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
P
C
0.2
W
℃
℃
T
J
150
-55-150
T
STG
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Test conditions
I
C
= 100
µA
I
E
=0
I
C
= 0.1mA,
I
B
=0
I
E
=100
µA
I
C
=0
MIN
50
45
5
TYP
MAX
UNIT
,
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
,
V
µA
I
CB
V
CB
=50V, I
E
=0
0.1
0.1
0.1
450
0.3
1
O
µA
µA
I
CE
V
CE
=35V, I
B
=0
Collector cut-off current
O
I
EBO
h
FE
V
EB
= 3V,
I
C
=0
Emitter cut-off current
V
CE
=5V, I
C
= 1mA
I
C
=100 mA,
I
B
= 5mA
I
C
=100 mA,
B
= 5mA
DC current gain
200
150
V
CE
(sat)
V
BE
(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
V
CE
=5V, I
C
= 10mA
f=
30MHz
f
T
Transition frequency
MHz
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
