IDCHIP-SS8050
| Part # | IDCHIP-SS8050 |
Download  | IDCHIP-SS8050 |
深圳市英
锐
芯电子科
技
有限
公司
NPN晶体管
SS8050
SS8050
TRANSISTOR (NPN)
SOT-23
FEATURES
Complimentary to SS8550
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
40
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
25
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
1.5
A
P
C
0.3
W
℃
℃
T
j
150
-55-150
T
stg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Test conditions
I
C
= 100
μ
I
E
=0
I
C
= 0.1mA,
I
B
=0
I
E
=100
μ
I
C
=0
MIN
40
25
5
TYP
MAX
UNIT
A
,
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
A
,
I
CB
V
CB
=40
V
,
I
E
=0
0.1
0.1
0.1
350
μ
A
μ
A
μ
A
O
I
CE
V
CB
=20
V
,
I
E
=0
Collector cut-off current
O
I
EBO
h
FE(1)
V
EB
= 5V,
I
C
=0
Emitter cut-off current
V
CE
=1
V
,
I
C
= 100mA
V
CE
=1
V
,
I
C
= 800mA
I
C
=800mA, I
B
= 80mA
I
C
=800mA, I
B
= 80mA
200
40
DC current gain
h
FE(2)
V
CE(sat)
V
BE(sat)
0.5
1.2
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
CE
=10
V
,
I
C
= 50mA
f=30MHz
f
T
100
MHz
Transition frequency
电话：
0755-82568882
传真：
0755-82568886
82568883
公司地址：
深圳市福田区滨河大道联合广场
A
座
1308
