Infineon-Technologies-2A300HB12C2F
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技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
V
CES
= 1200V
I
C nom
= 300A / I
CRM
= 600A
典型应用
TypicalꢀApplications
•
电机传动
• Motorꢀdrives
电气特性
ElectricalꢀFeatures
• Lowꢀswitchingꢀlosses
• T
vjꢀop
ꢀ=ꢀ150°C
•
低开关损耗
•
T
vjꢀop
ꢀ=ꢀ150°C
机械特性
MechanicalꢀFeatures
•
铜基板
• Copperꢀbaseꢀplate
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
Digit
1ꢀ-ꢀꢀꢀ5
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
DMXꢀ-ꢀCode
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
T
vj
= 25°C
V
CES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
T
C
= 85°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
I
C nom
I
C
300
400
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
t
P
= 1 ms
I
CRM
P
tot
600
1450
+/-20
A
总功率损耗
Totalꢀpowerꢀdissipation
T
C
= 25°C, T
vj max
= 175°C
ꢀ
W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
V
GES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
I
C
= 300 A, V
GE
= 15 V
I
C
= 300 A, V
GE
= 15 V
I
C
= 300 A, V
GE
= 15 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
1,85 2,25
2,20
2,30
V
V
V
V
CE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
I
C
= 9,95 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V … +15 V
V
GEth
Q
G
5,20 5,80 6,40
V
µC
Ω
栅极电荷
Gateꢀcharge
2,10
2,4
内部栅极电阻
Internalꢀgateꢀresistor
T
vj
= 25°C
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
输入电容
Inputꢀcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
16,5
0,71
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
400 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
I
C
= 300 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 0,51
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
0,14
0,15
0,15
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
I
C
= 300 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 0,51
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
0,03
0,03
0,04
µs
µs
µs
t
r
t
d off
t
f
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
I
C
= 300 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 0,51
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
0,32
0,39
0,41
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
I
C
= 300 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 0,51
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
0,05
0,08
0,09
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
I
C
= 300 A, V
CE
= 600 V, L
S
= 25 nH
V
GE
= ±15 V, di/dt = 8300 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 0,51
Ω
T
vj
= 25°C
14,5
25,0
28,0
mJ
mJ
mJ
E
on
E
off
T
vj
= 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
I
C
= 300 A, V
CE
= 600 V, L
S
= 25 nH
V
GE
= ±15 V, du/dt = 3600 V/µs (T
vj
= 150°C)T
vj
= 125°C
R
Goff
= 0,51
Ω
T
vj
= 25°C
18,5
28,5
32,0
mJ
mJ
mJ
T
vj
= 150°C
短路数据
SCꢀdata
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
t
P
≤
10 µs,
T
vj
= 150°C
1100
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
R
thJC
R
thCH
T
vj op
0,105 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,0700
K/W
λ
Paste
ꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀ
λ
grease
ꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
300
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
t
P
= 1 ms
600
I2t-值
I²tꢀ-ꢀvalue
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
14500
12500
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
I
F
= 300 A, V
GE
= 0 V
I
F
= 300 A, V
GE
= 0 V
I
F
= 300 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
1,65 2,10
1,65
1,65
V
V
V
V
F
I
RM
Q
r
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
I
F
= 300 A, – di
F
/dt = 8300 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
V
GE
= -15 V
340
380
390
A
A
A
T
vj
= 125°C
T
vj
= 150°C
恢复电荷
Recoveredꢀcharge
I
F
= 300 A, – di
F
/dt = 8300 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
V
GE
= -15 V
30,5
55,0
64,0
µC
µC
µC
T
vj
= 125°C
T
vj
= 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
I
F
= 300 A, – di
F
/dt = 8300 A/µs (T
vj
=150°C) T
vj
= 25°C
13,0
23,5
27,0
mJ
mJ
mJ
V
R
= 600 V
V
GE
= -15 V
T
vj
= 125°C
T
vj
= 150°C
E
rec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
R
thJC
R
thCH
T
vj op
0,146 K/W
K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,0870
λ
Paste
ꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀ
λ
grease
ꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
Cu
ꢀ
kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
Al
2
O
3
ꢀ
爬电距离
Creepageꢀdistance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
29,0
23,0
ꢀ
mm
ꢀ
mm
ꢀ
电气间隙
Clearance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
23,0
11,0
相对电痕指数
Comperativeꢀtrackingꢀindex
CTI
> 200
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
L
sCE
R
CC’+EE’
T
stg
M
20
nH
m
Ω
°C
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
T
C
ꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
0,70
储存温度
Storageꢀtemperature
-40
3,00
2,5
125
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
6,00 Nm
5,0 Nm
g
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
–
重量
Weight
G
285
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
I
C
ꢀ=ꢀfꢀ(V
CE
)
I
C
ꢀ=ꢀfꢀ(V
CE
)
V
GE
ꢀ=ꢀ15ꢀV
T
vj
ꢀ=ꢀ150°C
600
600
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
GE
= 19V
V
GE
= 17V
V
GE
= 15V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
500
400
300
200
100
500
400
300
200
100
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V
CE
[V]
V
CE
[V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
I
C
ꢀ=ꢀfꢀ(V
GE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
E
on
ꢀ=ꢀfꢀ(I
C
),ꢀE
off
ꢀ=ꢀfꢀ(I
C
)
)
V
CE
ꢀ=ꢀ20ꢀV
V
GE
ꢀ=ꢀ±15ꢀV,ꢀR
Gon
ꢀ=ꢀ0.51ꢀ
Ω
,ꢀR
Goff
ꢀ=ꢀ0.51ꢀ
Ω
,ꢀV
CE
ꢀ=ꢀ600ꢀV
600
120
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
E
on
, T
vj
= 125°C
E
on
, T
vj
= 150°C
E
off
, T
vj
= 125°C
E
off
, T
vj
= 150°C
500
400
300
200
100
100
80
60
40
20
0
0
5
6
7
8
9
10
11
12
13
0
100
200
300
I
C
[A]
400
500
600
V
GE
[V]
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
E
on
ꢀ=ꢀfꢀ(R
G
),ꢀE
off
ꢀ=ꢀfꢀ(R
G
)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
Z
thJC
ꢀ=ꢀfꢀ(t)
V
GE
ꢀ=ꢀ±15ꢀV,ꢀI
C
ꢀ=ꢀ300ꢀA,ꢀV
CE
ꢀ=ꢀ600ꢀV
70
1
E
on
, T
vj
= 125°C
E
on
, T
vj
= 150°C
E
off
, T
vj
= 125°C
Z
thJC
: IGBT
60
50
40
30
20
10
0
E
off
, T
vj
= 150°C
0,1
0,01
i:
1
2
3
4
r
i
[K/W]: 0,007056901 0,06753866 0,02070878 0,009895664
τ
i
[s]:
0,0008725
0,0345262 0,2426927 2,027383
0,001
0,001
0
1
2
3
4
5
6
0,01
0,1
t [s]
1
10
R
G
[
Ω
]
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
I
F
ꢀ=ꢀfꢀ(V
F
)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
E
rec
ꢀ=ꢀfꢀ(I
F
)
R
Gon
ꢀ=ꢀ0.51ꢀ
Ω
,ꢀV
CE
ꢀ=ꢀ600ꢀV
600
35
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
E
rec
, T
vj
= 125°C
E
rec
, T
vj
= 150°C
30
25
20
15
10
5
500
400
300
200
100
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
0
100
200
300
I
F
[A]
400
500
600
V
F
[V]
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
E
rec
ꢀ=ꢀfꢀ(R
G
)
瞬态热阻抗ꢀ二极管,逆变器ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
Z
thJC
ꢀ=ꢀfꢀ(t)
I
F
ꢀ=ꢀ300ꢀA,ꢀV
CE
ꢀ=ꢀ600ꢀV
35
1
E
rec
, T
vj
= 125°C
E
rec
, T
vj
= 150°C
Z
thJC
: Diode
30
25
20
15
10
5
0,1
0,01
i:
r
i
[K/W]: 0,0071
τ
i
[s]: 0,000677
0,0265 0,106
1,5
1
2
3
4
0,0597 0,0276 0,00828
0
0,001
0,001
0,0
1,0
2,0
3,0
R
G
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preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
接线图ꢀ/ꢀCircuitꢀdiagram
封装尺寸ꢀ/ꢀPackageꢀoutlines
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preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
2A300HB12C2F
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2015.
AllꢀRightsꢀReserved.
ꢀ
ꢀ
使用条件和条款
ꢀ
重要提示
本文档所提供的任何信息绝不应当被视为针对任何条件或者品质而做出的保证（质量保证）。英飞凌对于本文档中所提及的任何事例、
提示或者任何特定数值及/或任何关于产品应用方面的信息均在此明确声明其不承担任何保证或者责任，包括但不限于其不侵犯任何
第三方知识产权的保证均在此排除。
此外，本文档所提供的任何信息均取决于客户履行本文档所载明的义务和客户遵守适用于客户产品以及与客户对于英飞凌产品的应用
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而言本文档中所提供的信息是否充分自行予以评估。
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或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。
ꢀ
ꢀ
ꢀ
Termsꢀ&ꢀConditionsꢀofꢀusage
ꢀ
IMPORTANTꢀNOTICE
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀthe
applicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthisꢀdocumentꢀandꢀany
applicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀtheꢀproductꢀofꢀInfineonꢀTechnologies
inꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’sꢀtechnical
departmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀin
thisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Technologiesꢀofficeꢀ(www.infineon.com).
WARNINGS
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀyour
nearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorizedꢀrepresentativesꢀofꢀInfineon
Technologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀaꢀfailureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀof
theꢀuseꢀthereofꢀcan
reasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
preparedꢀby:ꢀCU
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-09-30
revision:ꢀV3.0
9
