Infineon-Technologies-AIKW30N60CT
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AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
LowꢀLossꢀDuoPack:ꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀdiode
ꢀ
C
E
Features:
•ꢀꢀAutomotiveꢀAEC-Q101ꢀqualified
•ꢀꢀDesignedꢀforꢀDC/ACꢀconvertersꢀforꢀAutomotiveꢀApplication
•ꢀꢀVeryꢀlowꢀꢀV
CE(sat)
ꢀ1.5Vꢀ(typ.)
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀꢀDynamicallyꢀstressꢀtested
G
•ꢀꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs
•ꢀꢀ100%ꢀshortꢀcircuitꢀtested
•ꢀꢀ100%ꢀofꢀtheꢀpartsꢀareꢀdynamicallyꢀtested
•ꢀꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀV
CE(sat)
•ꢀꢀLowꢀEMI
•ꢀꢀLowꢀgateꢀchargeꢀQ
G
•ꢀꢀGreenꢀpackage
•ꢀꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀHE
ꢀꢀꢀdiode
•ꢀꢀTRENCHSTOP
TM
ꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V
ꢀꢀꢀapplicationsꢀoffers:
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀꢀꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀhighꢀswitchingꢀspeed
G
C
E
Applications:
•ꢀꢀMainꢀinverter
•ꢀꢀClimateꢀcompressor
•ꢀꢀPTCꢀheater
•ꢀꢀMotorꢀdrives
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.5V 175°C
Marking
Package
PG-TO247-3
AIKW30N60CT
600V
30A
AK30DCT
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
60.0
30.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
90.0
90.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ600V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
T
C
ꢀ=ꢀ100°C
I
F
60.0
30.0
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
90.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
5
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
P
tot
T
vj
187.0
W
°C
°C
-40…+175
-55…+150
T
stg
Soldering temperature,
1)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
2)
junction – case
Diode thermal resistance,
2)
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
–
–
–
–
–
–
0.80 K/W
1.05 K/W
40 K/W
Thermal resistance
junction – ambient
1)
Package not recommended for surface mount application
2)
Thermal resistance of thermal grease R
th(c-s)
(case to heat sink) of more than 0.1K/W not included.
Datasheet
3
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ30.0A
600
–
–
V
V
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ25°C
–
–
1.50 2.05
1.90
T
vj
ꢀ=ꢀ175°C
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
1.65 2.05
V
V
1.60
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.43mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.1
4.9
5.7
V
CE
ꢀ=ꢀ600V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
40
–
µA
750
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ30.0A
–
–
–
100
–
nA
S
16.7
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
1630
108
50
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
167.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V,
t
SC
ꢀ
≤
ꢀ5µs
T
vj
ꢀ=ꢀ150°C
I
C(SC)
–
–
A
275
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
23
21
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.6
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.6
Ω
,
L
σ
ꢀ=ꢀ136nH,ꢀ
C
σ
ꢀ=ꢀ39pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
254
46
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.69
0.77
1.46
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
85
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
Q
rr
0.80
16.0
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ910A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-630
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
24
26
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.6
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.6
Ω
,
L
σ
ꢀ=ꢀ136nH,ꢀ
C
σ
ꢀ=ꢀ39pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
292
90
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.00
1.10
2.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
240
2.39
22.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ910A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-320
–
A/µs
Datasheet
5
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
200
180
160
140
120
100
80
60
50
40
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
j
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
j
≤
175°C)
V
GE
=20V
V
GE
=20V
80
80
15V
15V
70
60
50
40
30
20
10
0
13V
11V
9V
70
60
50
40
30
20
10
0
13V
11V
9V
7V
7V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Typicalꢀoutputꢀcharacteristic
(
T
j
=25°C)
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
j
=175°C)
Datasheet
6
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
70
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
T
vj
= 25°C
T
vj
= 175°C
I
C
= 15A
I
C
= 30A
I
C
= 60A
60
50
40
30
20
10
0
3
4
5
6
7
8
9
10
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 6.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
1000
100
10
1000
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
1
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 7.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
G
=10
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
1000
7
6
5
4
3
2
1
0
t
d(off)
t
f
t
d(on)
t
r
typ.
min.
max.
100
10
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G
=10
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(
I
C
=0,43mA)
4.0
E
off
E
on
E
off
E
on
5
E
ts
E
ts
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
0
10
20
30
40
50
60
0
10
20
30
40
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 11.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
G
=10
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
2.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
off
E
on
E
ts
E
off
E
on
E
ts
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
300
350
400
450
500
550
600
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G
=10
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
j
=175°C,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G
=10
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
20
V
CC
ꢀ=ꢀ120V
V
CC
ꢀ=ꢀ480V
C
ies
C
oes
C
res
18
1E+4
1000
100
16
14
12
10
8
6
4
2
0
10
0
20 40 60 80
100 120 140 160 180 200
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=30A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
500
400
300
200
100
0
14
12
10
8
6
4
2
0
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(
V
CE
≤
400V,ꢀstartꢀatꢀ
T
j
≤
150°C)
(
V
CE
=400V,ꢀstartꢀatꢀ
T
j
=25°C,ꢀ
T
j
max
≤
150°C)
1
1
0.1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
i:
1
2
3
4
r
i
[K/W]: 0.05279 0.19382 0.25779 0.29566
r
i
[K/W]: 0.22545 0.31252 0.26773 0.19517
τ
i
[s]:
6.5E-5
4.7E-4
6.1E-3
0.06478
τ
i
[s]:
2.2E-4
2.3E-3
0.01546 0.1079
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4
0.001 0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19.
IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
cyclesꢀ
D
(
D
=
t
p
/T)
cyclesꢀ
D
(
D
=
t
p
/T)
Datasheet
10
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
vj
= 25°C, I
F
= 30A
T
vj
= 175°C, I
F
= 30A
T
vj
= 25°C, I
F
= 30A
T
vj
= 175°C, I
F
= 30A
250
200
150
100
50
0
700 750 800 850 900 950
1000 1050 1100
700 750 800 850 900 950
1000 1050 1100
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 22.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V,DynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(
V
R
=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
30
25
20
15
10
5
0
-100
-200
-300
-400
-500
-600
-700
-800
T
vj
= 25°C, I
F
= 30A
T
vj
= 175°C, I
F
= 30A
T
vj
= 25°C, I
F
= 30A
T
vj
= 175°C, I
F
= 30A
0
700 750 800 850 900 950
1000 1050 1100
700 750 800 850 900 950
1000 1050 1100
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
Figure 24.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(
V
R
=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
11
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
80
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
T
vj
= 25°C
T
vj
= 175°C
I
F
= 15A
I
F
= 30A
I
F
= 60A
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 26.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
Package Drawing PG-TO247-3
Datasheet
13
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
14
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOP
TM
ꢀSeries
RevisionꢀHistory
AIKW30N60CT
Revision:ꢀ2017-02-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2017-02-09 Data
sheet created
Datasheet
15
Vꢀ2.1
2017-02-09
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
µHVIC™,ꢀµIPM™,ꢀµPFC™,ꢀAU-ConvertIR™,ꢀAURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀCoolDP™,
CoolGaN™,ꢀCOOLiR™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀDAVE™,ꢀDI-POL™,ꢀDirectFET™,ꢀDrBlade™,ꢀEasyPIM™,
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StrongIRFET™,ꢀSupIRBuck™,ꢀTEMPFET™,ꢀTRENCHSTOP™,ꢀTriCore™,ꢀUHVIC™,ꢀXHP™,ꢀXMC™
ꢀ
TrademarksꢀupdatedꢀNovemberꢀ2015
ꢀ
OtherꢀTrademarks
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Publishedꢀby
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