Infineon-Technologies-AIKW50N65DF5

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

HighꢀspeedꢀfastꢀIGBTꢀinꢀTRENCHSTOP

TM

ꢀ5ꢀtechnologyꢀcopackedꢀwith  

RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  

ꢀ

C

E

FeaturesꢀandꢀBenefits:  

ꢀꢀꢀHighꢀspeedꢀF5ꢀtechnologyꢀoffering:  

•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant  

ꢀꢀꢀtopologies  

•ꢀꢀ650Vꢀbreakdownꢀvoltage  

•ꢀꢀLowꢀgateꢀchargeꢀQ

G  

•ꢀꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  

•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  

•ꢀꢀDynamicallyꢀstressꢀtested  

G

•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101  

•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)  

•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  

Applications:  

•ꢀꢀOff-boardꢀcharger  

•ꢀꢀOn-boardꢀcharger  

•ꢀꢀDC/DCꢀconverter  

•ꢀꢀPower-Factorꢀcorrection  

1

2

3

Packageꢀpinꢀdefinition:  

•ꢀꢀPinꢀ1ꢀ-ꢀgate  

•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector  

•ꢀꢀPinꢀ3ꢀ-ꢀemitter  

KeyꢀPerformanceꢀandꢀPackageꢀParameters  

Type  

V

CE  

I

C  

V

CEsat

,ꢀ

T

vj

=25°C

T

vjmax  

1.66V 175°C  

Marking  

Package  

PG-TO247-3  

AIKW50N65DF5  

650V  

50A  

AK50EDF5  

Datasheet  

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Thermal Resistance

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Electrical Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  

Electrical Characteristics Diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Package Drawing

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

13  

Testing Conditions

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

1

5  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  

Datasheet  

2

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

MaximumꢀRatings  

Parameter  

Symbol  

Value  

Unit  

Collector-emitterꢀvoltage,ꢀ

T

vj

ꢀ

≥

ꢀ25°C  

V

CE  

650  

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  

T

C

ꢀ=ꢀ100°C  

I

C  

80.0  

53.5  

A

1)  

Pulsedꢀcollectorꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Cpuls  

150.0  

150.0  

A

A

Turn off safe operating area  

–

V

CE

ꢀ

≤

ꢀ650V,ꢀ

T

vj

ꢀ

≤

ꢀ175°C,ꢀ

t

p

ꢀ=ꢀ1µs

1)  

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  

T

C

ꢀ=ꢀ100°C  

I

F  

40.0  

27.0  

A

1)  

Diodeꢀpulsedꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Fpuls  

V

GE  

150.0  

A

V

Gate-emitter voltage  

±20  

±30  

TransientꢀGate-emitterꢀvoltageꢀ(

t

p

ꢀ

≤

ꢀ10µs,ꢀ

D

ꢀ<ꢀ0.010)  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ25°C  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ100°C  

270.0  

136.0  

P

tot  

W

Operating junction temperature  

T

vj  

-40…+175  

-55…+150  

°C  

°C  

Storage temperature  

T

stg  

Soldering temperature,

2)  

wave soldering 1.6mm (0.063in.) from case for 10s  

°C  

260  

0.6  

Mounting torque, M3 screw  

Maximum of mounting processes: 3  

M

Nm  

ThermalꢀResistance  

Value  

min. typ. max.  

Parameter  

Symbol Conditions  

Unit  

R

th

ꢀCharacteristics  

IGBT thermal resistance,  

junction – case  

R

th(j-C)  

R

th(j-C)  

R

th(j-a)  

–

–

–

–

–

–

0.55 K/W  

1.50 K/W  

40 K/W  

Diode thermal resistance,  

junction – case  

Thermal resistance  

junction – ambient  

Datasheet  

3

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

StaticꢀCharacteristic  

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

ꢀ=ꢀ0V,ꢀ

I

C

ꢀ=ꢀ0.20mA  

V

GE

ꢀ=ꢀ15.0V,ꢀ

I

C

ꢀ=ꢀ50.0A  

T

vj

ꢀ=ꢀ25°C  

Collector-emitter saturation voltage

 

V

CEsat  

T

vj

ꢀ=ꢀ125°C  

650  

–

–

V

V

–

–

–

1.66 2.10  

1.90  

2.03  

–

–

T

vj

ꢀ=ꢀ175°C  

V

GE

ꢀ=ꢀ0V,ꢀ

I

F

ꢀ=ꢀ25.0A  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ125°C  

T

vj

ꢀ=ꢀ175°C  

–

–

–

1.54 1.80  

Diode forward voltage  

V

F  

V

1.52  

1.49  

–

–

Gate-emitter threshold voltage  

V

GE(th)  

I

C

ꢀ=ꢀ0.30mA,ꢀ

V

CE

ꢀ=ꢀ

V

GE  

3.2  

4.0  

4.8  

V

V

CE

ꢀ=ꢀ650V,ꢀ

V

GE

ꢀ=ꢀ0V  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ175°C  

Zero gate voltage collector current

 

I

CES  

–

–

–

40  

–

µA  

1200  

Gate-emitter leakage current  

Transconductance  

I

GES  

g

fs  

V

CE

ꢀ=ꢀ0V,ꢀ

V

GE

ꢀ=ꢀ20V  

V

CE

ꢀ=ꢀ20V,ꢀ

I

C

ꢀ=ꢀ50.0A  

–

–

–

100  

–

nA  

S

62.0  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

DynamicꢀCharacteristic  

Input capacitance  

C

ies  

–

–

–

2800  

65  

–

–

–

Output capacitance  

C

oes  

C

res  

V

CE

ꢀ=ꢀ25V,ꢀ

V

GE

ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  

pF  

Reverse transfer capacitance  

11  

V

CC

ꢀ=ꢀ520V,ꢀ

I

C

ꢀ=ꢀ50.0A,  

V

GE

ꢀ=ꢀ15V  

Gate charge  

Q

G  

L

E  

–

–

108.0  

13.0  

–

–

nC  

nH  

Internal emitter inductance  

measured 5mm (0.197 in.) from  

case  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

21  

12  

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ25.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ12.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ12.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

156  

6

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.49  

0.14  

0.63  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

Datasheet  

4

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

19  

4

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ6.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ12.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ12.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

173  

10  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.10  

0.03  

0.13  

mJ  

mJ  

mJ  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

77  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ25.0A,  

di

F

/dt

ꢀ=ꢀ1200A/µs  

Q

rr  

0.68  

15.5  

Diode peak reverse recovery current

I

rrm  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-258  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

36  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ6.0A,  

Q

rr  

0.28  

12.5  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ1200A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-759  

–

A/µs  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

21  

14  

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ25.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ12.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ12.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

191  

5

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.68  

0.25  

0.93  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

18  

5

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ6.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ12.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ12.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

229  

13  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.18  

0.06  

0.24  

mJ  

mJ  

mJ  

Datasheet  

5

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

123  

1.47  

20.8  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ25.0A,  

Q

rr  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ1200A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-214  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

65  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ6.0A,  

Q

rr  

0.71  

19.0  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ1200A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-462  

–

A/µs  

Datasheet  

6

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

270  

240  

210  

180  

150  

120  

90  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

60  

30  

0

25  

50  

75  

100  

125  

150  

175  

25  

50  

75  

100  

125  

150  

175  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

Figure 1.

Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  

Figure 2.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

temperature  

(

T

vj

≤

175°C)  

(

V

GE

≥

15V,ꢀ

T

vj

≤

175°C)  

150  

135  

150  

135  

120  

120  

V

GE

= 20V  

V

GE

= 20V  

18V  

18V  

105  

105  

15V  

15V  

90  

90  

12V  

12V  

10V  

8V  

7V  

6V  

5V  

10V  

8V  

7V  

6V  

5V  

75  

60  

45  

30  

15  

0

75  

60  

45  

30  

15  

0

0

1

2

3

4

5

0

1

2

3

4

5

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 3.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=25°C)  

Figure 4.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=150°C)  

Datasheet  

7

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

150  

2.50  

2.25  

2.00  

1.75  

1.50  

1.25  

1.00  

0.75  

0.50  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ150°C  

I

C

ꢀ=ꢀ6.25A  

I

C

ꢀ=ꢀ12.5A  

I

C

ꢀ=ꢀ25A  

135  

I

C

ꢀ=ꢀ50A  

120  

105  

90  

75  

60  

45  

30  

15  

0

4

5

6

7

8

9

0

25  

50  

75  

100  

125  

150  

175  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 5.

Typicalꢀtransferꢀcharacteristic  

(

V

CE

=20V)  

Figure 6.

Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  

aꢀfunctionꢀofꢀjunctionꢀtemperature  

(

V

GE

=15V)  

1000  

1000  

t

d(off)  

t

f  

t

d(on)  

t

r  

t

d(off)  

t

f  

t

d(on)  

t

r  

100  

10  

1

100  

10  

1

0

30  

60  

90  

120  

150  

5

15  

25  

35  

45  

55  

65  

75  

85  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 7.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

collectorꢀcurrent  

Figure 8.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  

resistance  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

G(on)

=12

Ω

,ꢀ

R

G(off)

=12

Ω

,ꢀdynamic  

test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=25A,ꢀdynamicꢀtestꢀcircuitꢀin  

Figure E)  

Datasheet  

8

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

1000  

5.5  

5.0  

4.5  

4.0  

3.5  

3.0  

2.5  

2.0  

1.5  

1.0  

t

d(off)  

t

f  

t

d(on)  

t

r  

typ.  

min.  

max.  

100  

10  

1

25  

50  

75  

100  

125  

150  

175  

0

25  

50  

75  

100  

125  

150  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 9.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

junctionꢀtemperature  

Figure 10.

Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  

ofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

(

I

C

=0.3mA)  

I

C

=25A,ꢀ

R

G(on)

=12

Ω

,ꢀ

R

G(off)

=12

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

11  

10  

9

2.4  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

2.2  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

8

7

6

5

4

3

2

1

0

0

30  

60  

90  

120  

150  

5

15  

25  

35  

45  

55  

65  

75  

85  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 11.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀcurrent  

Figure 12.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀgateꢀresistance  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

G(on)

=12

Ω

,ꢀ

R

G(off)

=12

Ω

,  

dynamic test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=25A,ꢀdynamicꢀtestꢀcircuitꢀin  

Figure E)  

Datasheet  

9

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

1.0  

1.2  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

25  

50  

75  

100  

125  

150  

175  

200  

250  

300  

350  

400  

450  

500  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 13.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

I

C

=25A,ꢀ

R

G(on)

=12

Ω

,ꢀ

R

G(off)

=12

Ω

,ꢀdynamic  

test circuit in Figure E)  

Figure 14.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀemitterꢀvoltage  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=0/15V,  

I

C

=25A,ꢀ

R

G(on)

=12

Ω

,ꢀ

R

G(off)

=12

Ω

,ꢀdynamic  

test circuit in Figure E)  

16  

V

CC

ꢀ=ꢀ130V  

V

CC

ꢀ=ꢀ520V  

C

ies  

C

oes  

1E+4  

C

res  

14  

12  

10  

8

1000  

100  

10  

1

6

4

2

0

0

20  

40  

60  

80  

100  

120  

0

5

10  

15  

20  

25  

30  

Q

G

,ꢀGATEꢀCHARGEꢀ[nC]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 15.

Typicalꢀgateꢀcharge  

(

I

C

=50A)  

Figure 16.

Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  

collector-emitterꢀvoltage  

(

V

GE

=0V,ꢀf=1MHz)  

Datasheet  

10  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

1

1

D = 0.5  

0.2  

D = 0.5  

0.2  

0.1  

0.1  

0.1  

0.05  

0.05  

0.1  

0.02  

0.02  

0.01  

0.01  

single pulse  

single pulse  

0.01  

0.01  

i:  

1

2

3

4

5

i:  

r

i

[K/W]: 0.2723102 0.3217888 0.4470437 0.4588573  

τ

i

[s]: 1.3E-4

 

1.1E-3 0.0104944

 

0.1086427  

1

2

3

4

r

i

[K/W]: 0.026138 0.118331 0.159109 0.181217 0.065204  

τ

i

[s]:  

3.3E-5  

2.5E-4  

3.9E-3  

0.044084 0.191225  

0.001  

1E-6  

0.001  

1E-5  

1E-4  

0.001  

0.01  

0.1  

1

1E-7 1E-6 1E-5 1E-4

 

0.001 0.01  

0.1  

1

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

Figure 17.

IGBTꢀtransientꢀthermalꢀimpedance  

(

D

=

t

p

/T)  

Figure 18.

Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  

functionꢀofꢀpulseꢀwidth  

(

D

=

t

p

/T)  

180  

1.6  

T

vj

ꢀ=ꢀ25°C,ꢀ

I

F

ꢀ=ꢀ25A  

T

vj

ꢀ=ꢀ150°C,ꢀ

I

F

ꢀ=ꢀ25A  

160  

140  

120  

100  

80  

1.4  

T

vj

ꢀ=ꢀ25°C,ꢀ

I

F

ꢀ=ꢀ25A  

T

vj

ꢀ=ꢀ150°C,ꢀ

I

F

ꢀ=ꢀ25A  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

60  

40  

500  

700  

900 1100

 

1300 1500 1700 1900  

500  

700  

900 1100

 

1300 1500 1700 1900  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 19.

Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction

Figure 20.

Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  

ofꢀdiodeꢀcurrentꢀslope  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

(

V

R

=400V)  

Datasheet  

11  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

24  

0

-50  

T

vj

ꢀ=ꢀ25°C,ꢀ

I

F

ꢀ=ꢀ25A  

T

vj

ꢀ=ꢀ150°C,ꢀ

I

F

ꢀ=ꢀ25A  

T

vj

ꢀ=ꢀ25°C,ꢀ

I

F

ꢀ=ꢀ25A  

T

vj

ꢀ=ꢀ150°C,ꢀ

I

F

ꢀ=ꢀ25A  

22  

20  

18  

16  

14  

12  

10  

8

-100  

-150  

-200  

-250  

-300  

-350  

-400  

500  

700  

900 1100

 

1300 1500 1700 1900  

500  

700  

900 1100

 

1300 1500 1700 1900  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 21.

Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

Figure 22.

Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  

currentꢀslope  

(

V

R

=400V)  

75.0  

2.2  

2.0  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ150°C  

62.5  

50.0  

37.5  

25.0  

12.5  

0.0  

I

F

ꢀ=ꢀ6.25A  

I

F

ꢀ=ꢀ12.5A  

I

F

ꢀ=ꢀ25A  

I

F

ꢀ=ꢀ50A  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

25  

50  

75  

100  

125  

150  

175  

V

F

,ꢀFORWARDꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 23.

Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

Figure 24.

Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  

Datasheet  

12  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Package Drawing PG-TO247-3  

Datasheet  

13  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Testing Conditions  

V

GE

(t)  

I,V  

90%

V

GE  

t

rr

=

t

a

+

t

b  

dI

F

/dt  

Q

rr

=

Q

a

+

Q

b  

a

b

10%

V

GE  

t

Q

a  

Q

b  

I

C

(t)  

dI  

90%

I

C  

90%

I

C  

10%

I

C  

10%

I

C  

Figure C.

Definition of diode switching  

characteristics  

t

V

CE

(t)  

t

t

t

d(off)  

t

f  

t

d(on)  

t

r  

Figure A.  

V

GE

(t)  

90%

V

GE  

Figure D.  

10%

V

GE  

t

I

C

(t)  

CC  

2%

I

C  

t

V

CE

(t)  

Figure E.

 

Dynamic test circuit  

Parasitic inductance L

 

,  

parasitic capacitor C

 

,  

s

s

relief capacitor C ,  

(only for ZVT switching)  

r

t

2  

t

4  

E

=

V

CE

x

I

C

x d

t  

E

=

V

CE

x

I

C

x d

t  

off  

on  

2%

V

CE  

t

1  

t

3  

t

t

1  

t

2  

t

3  

t

4  

Figure B.  

Datasheet  

14  

Vꢀ2.1  

2017-06-30  

AIKW50N65DF5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

RevisionꢀHistory  

AIKW50N65DF5  

Revision:ꢀ2017-06-30,ꢀRev.ꢀ2.1  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2.1  

2017-06-30 Data

 

sheet created  

Datasheet  

15  

Vꢀ2.1  

2017-06-30  

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  

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ꢀ

TrademarksꢀupdatedꢀNovemberꢀ2015  

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