Infineon-Technologies-AUIRF1405ZS-7TRL
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AUTOMOTIV
E
G
RADE
AUIRF1405ZS-7P
HEXFET
®
Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
D
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 4.9m
Ω
G
S
I
D
= 120A
Automotive Qualified *
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
This HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design
are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of
applications.
D
2
Pak 7 Pin
Standard Pack
Form
Tube
Base Part Number
Package Type
Orderable Part Number
Quantity
50
800
AUIRF1405ZS-7P
AUIRF1405ZS-7TRL
AUIRF1405ZS-7P
D2Pak- 7 Pin
Tape and Reel Left
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
Thes
e
a
r
e
s
tres
s
r
ating
s
o
nly
;
a
n
d
functiona
l
o
peratio
n
o
f
t
h
e
d
evic
e
a
t
t
hes
e
o
r
a
n
y
o
the
r
c
onditio
n
b
eyon
d
t
hose
indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Max.
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Units
150
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
100
A
120
I
D
@ T
C
= 25°C
590
I
DM
230
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
W/°C
V
1.5
Linear Derating Factor
± 20
250
V
GS
E
AS
I
AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
See Fig.12a,12b,15,16
E
AR
T
J
Repetitive Avalanche Energy
mJ
-55 to
+ 175
Operating Junction and
°C
T
STG
Storage Temperature Range
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
0.65
40
Units
R
θ
JC
°C/W
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
HEXFET
®
is a registered trademark of International Rectifier.
1
AUIRF1405ZS-7P
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
55
Typ.
–––
Max. Units
Conditions
V
(
B
R)DSS
ΔΒ
V
DSS
/
Δ
T
J
R
D
S
(on)
SMD
V
GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
4.9
V
V
GS
= 0V, I
D
= 250
μ
A
–––
0.054
3.7
V/°C Reference
to 25°C, I
D
= 1mA
m
Ω
–––
2.0
V
GS
= 10V, I
D
= 88A
–––
–––
–––
–––
–––
–––
150
37
4.0
V
S
V
DS
= V
GS
, I
D
= 150
μ
A
DS
= 10V, I
D
= 88A
Forward Transconductance
gfs
108
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
V
I
DSS
Drain-to-Source Leakage Current
μ
A V
DS
= 55V, V
GS
= 0V
250
200
-200
230
–––
–––
–––
–––
–––
–––
–––
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
Q
g
Q
gs
Q
gd
t
d
(
o
n)
t
r
nC I
D
= 88A
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
64
16
ns
Rise Time
140
170
130
4.5
I
D
= 88A
t
d
(
o
ff)
t
f
Turn-Off Delay Time
R
G
= 5.0
Ω
Fall Time
V
GS
= 10V
L
D
Internal Drain Inductance
nH Between
lead,
D
S
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
G
and center of die contact
C
iss
Input Capacitance
–––
–––
–––
–––
–––
–––
5360
1310
340
–––
–––
–––
–––
–––
–––
pF V
GS
= 0V
V
DS
= 25V
C
oss
C
rss
C
oss
C
oss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
6080
920
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 44V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Output Capacitance
C
oss
eff.
Effective Output Capacitance
1700
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I
S
Continuous Source Current
–––
–––
150
MOSFET symbol
D
S
(Body Diode)
A
showing the
G
I
SM
Pulsed Source Current
–––
–––
590
integral reverse
(Body Diode)
p-n junction diode.
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
63
1.3
95
V
ns
nC
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
Reverse Recovery Time
di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
160
240
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.064mH, R
G
= 25
Ω
, I
AS
= 88A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
ꢀ
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitiv
e
a
valanch
e
p
erformance.
This is applied to D
2
Pak, when mounted on 1″ square PCB
( FR-4 or G-10 Material ).
For recommended footprint and
soldering techniques refer to application note #AN-994.
R is
measured at T
J
of approximately 90°C.
θ
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
2
AUIRF1405ZS-7P
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60
μ
s PULSE WIDTH
Tj = 175°C
≤
60
μ
s PULSE WIDTH
Tj = 25°C
≤
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
200
1000
175
150
125
100
75
T =
25°C
J
100
10
1
T
= 175°C
J
T =
175°C
J
T
= 25°C
J
50
V
= 10V
DS
380
μ
s PULSE
WIDTH
25
V
= 25V
DS
≤
60
μ
s PULSE WIDTH
0
0.1
0
25 50
75 100
125 150 175 200
0
2
4
6
8
10 12
I ,Drain-to-Source
Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
AUIRF1405ZS-7P
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 88A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
V
V
= 44V
= 28V
= C
DS
DS
rss
oss
gd
= C
+ C
ds
gd
C
iss
6.0
C
oss
C
4.0
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
100
μ
sec
J
1msec
T
= 25°C
J
DC
1
10msec
100
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
V
= 0V
GS
0.01
1
1
10
1000
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
AUIRF1405ZS-7P
150
125
100
75
2.5
2.0
1.5
1.0
0.5
I
= 88A
D
V
= 10V
GS
50
25
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs
.
T
emperature
Cas
e
T
emperature
1
D = 0.50
0.20
0.1
0.10
0.05
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
0.02
0.01
τ
J
τ
J
τ
τ
C
τ
0.1707
0.1923
0.2885
0.000235
0.000791
0.008193
0.01
0.001
τ
1
τ
1
τ
2
τ
2
3
τ
3
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
AUIRF1405ZS-7P
15V
1000
800
600
400
200
0
I
D
TOP
14A
23A
DRIVER
+
L
V
DS
BOTTOM 88A
D.U.T
AS
R
G
V
DD
–
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.5
V
G
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Charge
Fig 13a.
Basic Gate Charge Waveform
I
I
I
I
= 150
μ
A
= 250
μ
A
= 1.0mA
= 1.0A
D
D
D
D
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
-75 -50 -25
0
25 50 75
100 125 150 175 200
, Temperature ( °C )
V
GS
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
AUIRF1405ZS-7P
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
1
pulsewidth, tav, assuming
Δ
Τ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
300
250
200
150
100
50
TOP
BOTTOM 1%
Duty Cycle
= 88A
Single Pulse
I
D
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs
.
T
emperature
7
AUIRF1405ZS-7P
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
AUIRF1405ZS-7P
D
2
Pak – 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
9
AUIRF1405ZS-7P
D
2
Pak – 7 Pin Part Marking Information
Par
t
N
umber
AUF1405ZS-7P
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
D
2
Pak – 7 Pin Tape and Reel
10
AUIRF1405ZS-7P
Qualification Information
†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This
part number(s) passed Automotive
qualification. IR’s
Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1
Class M4(425V)
††
(per AEC-Q101-002)
7L-D2 PAK
Machine Model
Class H1C(2000V)
††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(1125V)
††
(per AEC-Q101-005)
Charged De
v
i
ce
M
odel
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site:
†† Highest
passing voltage.
11
AUIRF1405ZS-7P
IMPORTAN
T
N
OTICE
Unles
s
s
pecificall
y
d
esignate
d
f
o
r
t
h
e
a
utomotiv
e
m
arket
,
I
nternationa
l
R
ectifie
r
C
orporatio
n
a
n
d
i
t
s
s
ubsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designate
d
w
it
h
t
h
e
“
AU
”
p
refi
x
f
ollo
w
a
utomotiv
e
i
ndustr
y
a
n
d
/
o
r
c
ustome
r
s
pecifi
c
r
equirement
s
w
it
h
r
egards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR
deem
s
n
ecessar
y
t
o
s
uppor
t
t
hi
s
w
arranty. Excep
t
w
her
e
m
andate
d
b
y
g
overnmen
t
r
equirements, testin
g
o
f
a
ll
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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implan
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,
o
r
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the
r
a
pplication
s
i
ntende
d
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o
s
uppor
t
o
r
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ustai
n
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ife
,
o
r
i
n
a
n
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o
the
r
a
pplicatio
n
i
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w
hich
the failure of the IR product could create a situation where personal injury or death may occur.
Should Buyer
purchas
e
o
r
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roduct
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nauthorize
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a
pplication
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uye
r
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ndemnif
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old
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
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o
f
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that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospac
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are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specifi
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esignate
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umber
including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel
:
(
310
)
2
52-7105
12
AUIRF1405ZS-7P
Revision History
Date
Comments
Corrected part number for TRL from “AUIRF1405ZS-7PTRL” to “AUIRF1405ZS-7TRL” on page1.
•
2/27/2015
13
