Infineon-Technologies-AUIRF2804STRL
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AUIRF2804
AUIRF2804S
AUIRF2804L
AUTOMOTIVE GRADE
Features
V
DSS
40V
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
R
DS(on)
typ.
1.5m
2.0m
270A
195A
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
S
D
S
S
G
D
G
G
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Tube
Orderable Part Number
Quantity
50
AUIRF2804
AUIRF2804L
TO-220
TO-262
AUIRF2804
AUIRF2804L
Tube
50
Tube
Tape and Reel Left
50
800
AUIRF2804S
AUIRF2804STRL
AUIRF2804S
D
2
-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
270
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
190
195
A
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
1080
300
2.0
P
D
@T
C
= 25°C
W
W/°C
V
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
540
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
1160
I
AR
See Fig.15,16, 12a, 12b
A
E
AR
T
J
Repetitive Avalanche Energy
mJ
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.50
–––
62
Units
R
JC
R
CS
R
JA
R
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
HEXFET® is a registered trademark of Infineon.
1
2017-08-22
AUIRF2804/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
40 –––
–––
––– 0.031 ––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
R
DS(on)
SMD
–––
–––
2.0
1.5
1.8
–––
2.0
2.3
4.0
V
GS
= 10V, I
D
= 75A
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
DS
= 10V, I
D
= 75A
DS
=40 V, V
GS
= 0V
DS
=40V,V
GS
= 0V,T
J
=125°C
GS
= 20V
m
R
DS(on)
TO-220 Static
Drain-to-Source On-Resistance
V
GS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
V
S
130 ––– –––
––– –––
20
––– ––– 250
––– ––– 200
––– –––
-200
V
V
V
V
V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
GS
= -20V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
––– 160 240
I
D
= 75A
nC V
DS
= 32V
GS
= 10V
–––
–––
–––
41
66
13
62
99
–––
V
V
DD
= 20V
I
D
= 75A
R
G
= 2.5
––– 120 –––
––– 130 –––
––– 130 –––
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
––– 6450 –––
––– 1690 –––
––– 840 –––
––– 5350 –––
––– 1520 –––
––– 2210 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
pF
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ.
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 75A
,V
GS
= 0V
Continuous Source Current
(Body Diode)
I
S
––– –––
270
A
––– –––
1080
Pulsed Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
1.3
84
100
V
–––
–––
56
67
ns T
J
= 25°C ,I
F
= 75A
, V
DD
= 20V
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating;
pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.24mH, R
G
= 25
, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is
a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.24mH, R
G
= 25
, I
AS
= 75A, V
GS
=10V.
This is applied to D
2
Pak When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
Max R
DS(on)
for D
2
Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W.
All AC and DC test condition based on old Package limitation current = 75A.
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AUIRF2804/S/L
10000
1000
100
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
1000
300
250
200
150
100
50
T
J
= 25°C
J
T
= 175°C
J
100
10
1
T
= 175°C
T
= 25°C
J
V
= 10V
V
= 10V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
0
4.0
5.0
6.0
7.0
8.0
9.0
0
40
80
120
160
200
V
, Gate-to-Source Voltage (V)
I
, Drain-to-Source Current (A)
GS
D
Fig. 4
Typical Forward Transconductance
Fig. 3
Typical Transfer Characteristics
vs. Drain Current
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AUIRF2804/S/L
12000
10000
8000
6000
4000
2000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
SHORTED
GS
I =
75A
D
= C
+ C
, C
iss
gs
gd
ds
V
= 32V
C
= C
DS
rss
gd
C
= C
+ C
VDS= 20V
VDS= 8.0V
oss
ds
gd
Ciss
4
Coss
Cr
s
s
0
0
1
10
, Drain-to-Source Voltage (V)
100
0
40
80
120
160
200
240
V
Q
Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
1.0
Tc = 25°C
Tj = 175°C
Single Pulse
J
V
= 0V
GS
0.1
1
0.2
0.6
SD
1.4
1.8
2.2
0
1
10
100
V
, Source-toDrain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
2017-08-22
Forward Voltage
4
AUIRF2804/S/L
2.0
1.5
1.0
0.5
300
250
200
150
100
50
I
= 75A
D
Limited By Package
V
= 10V
GS
0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs. Case Temperature
vs. Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-008
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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2017-08-22
AUIRF2804/S/L
15V
1200
1000
800
600
400
200
0
I
DRIVER
+
L
D
V
DS
TOP
31A
53A
BOTTOM 75A
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
I
AS
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Id
Vds
Vgs
4.0
Vgs(th)
I
= 250µA
D
3.0
2.0
1.0
Qgs1
Qgs2
Qgd
Qgodr
Fig 13a.
Gate Charge Waveform
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
T
J
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
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AUIRF2804/S/L
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs. Pulse width
600
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
BOTTOM 10%
Duty C
y
cle
= 75A
Single
P
u
lse
1. Avalanche
failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
Starting T
, Junction Temperature (°C)
J
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs. Temperature
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AUIRF2804/S/L
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
8
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AUIRF2804/S/L
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRF2804
Date Code
Y= Year
WW= Work Week
IR Logo
Lot Code
TO-220AB package
is not recommended for Surface Mount Application.
9
2017-08-22
AUIRF2804/S/L
D
2
Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AUIRF2804S
Date Code
Y= Year
WW= Work Week
IR Logo
Lot Code
10
2017-08-22
AUIRF2804/S/L
TO-262 Package Outline
(Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF2804L
Date Code
Y= Year
IR Logo
WW= Work Week
Lot Code
11
2017-08-22
AUIRF2804/S/L
D
2
Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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2017-08-22
AUIRF2804/S/L
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-220AB
N/A
Moisture Sensitivity Level
TO-262
D
2
-Pak
MSL1
Class M4
†
Machine Model
AEC-Q101-002
Class H3A
†
AEC-Q101-001
Class C5
†
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template.
Corrected ordering table on page 1.
9/30/2015
8/22/2017
Corrected part marking on pages 9,10,11.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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