Infineon-Technologies-AUIRF3205Z
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AUIRF3205Z
AUTOMOTIVE GRADE
AUIRF3205ZS
HEXFET
®
Power MOSFET
Features
V
DSS
55V
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
R
DS(on)
max.
I
D (Silicon Limited)
I
D (Package Limited)
6.5m
110A
75A
D
Description
S
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area.
Additional features of this design
are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Base part number
AUIRF3205Z
Package Type
TO-220
Orderable Part Number
Quantity
50
50
800
AUIRF3205Z
AUIRF3205ZS
AUIRF3205ZSTRL
Tube
Tape and Reel Left
AUIRF3205ZS
D
2
-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
110
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
78
75
A
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
440
170
1.1
P
D
@T
C
= 25°C
W
W/°C
V
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
180
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
250
I
AR
See Fig.15,16, 12a, 12b
A
E
AR
T
J
Repetitive Avalanche Energy
mJ
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.90
–––
62
Units
R
JC
R
CS
R
JA
R
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
HEXFET® is a registered trademark of Infineon.
1
2015-11-13
AUIRF3205Z/S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
55 ––– –––
––– 0.051 –––
V/°C Reference
to 25°C, I
D
= 1mA
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
––– 4.9
2.0 ––– 4.0
71 ––– –––
6.5
V
GS
= 10V, I
D
= 66A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 66A
m
V
V
GS(th)
gfs
Forward Trans conductance
S
––– –––
20
V
DS
= 55V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 200
––– ––– -200
V
DS
= 55V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
V
GS
= 20V
GS
= -20V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
––– 76
––– 21
––– 30
––– 18
––– 95
––– 45
––– 67
110
–––
–––
–––
–––
–––
–––
I
D
= 66A
nC V
DS
= 44V
GS
= 10V
V
V
DD
= 28V
I
D
= 66A
R
G
= 6.8
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
and center of die contact
C
iss
C
oss
Input Capacitance
Output Capacitance
––– 3450 –––
––– 550 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
C
rss
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
––– 310 –––
––– 1940 –––
––– 430 –––
––– 640 –––
pF
C
oss
C
oss
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
C
oss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max.
Units
––– –––
75
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
I
S
A
Pulsed Source Current
(Body Diode)
I
SM
––– ––– 440
––– –––
1.3
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
T
J
= 25°C,I
S
= 66A,V
GS
= 0V
––– 28
––– 25
42
38
ns
T
J
= 25°C ,I
F
= 66A , V
DD
= 25V
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
on
Notes:
Repetitive rating;
pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.08mH, R
G
= 25
, I
AS
= 66A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is
a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
.
This value determined from sample failure population, starting
T
J
= 25°C, L = 0.08mH, R
G
= 25
, I
AS
= 66A, V
GS
=10V.
This is only applied to TO-220AB package.
This is applied to D
2
Pak, When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
R
is measured at T
J
of approximately 90°C
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2015-11-13
AUIRF3205Z/S
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
120
100
80
60
40
20
0
1000
100
10
T
= 175°C
J
T
= 25°C
J
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 25V
20µs PULSE WIDTH
DS
1
0
20
D,
40
60
80
100
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
I
Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
GS
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
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AUIRF3205Z/S
6000
5000
4000
3000
2000
1000
0
V
= 0V,
f = 1 MHZ
20
16
12
8
GS
I =
66A
D
C
C
C
= C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
V
= 44V
rss
oss
gd
DS
= C
+ C
ds
gd
VDS= 28V
VDS= 11V
Ciss
4
Coss
Crss
0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
DS
Q
Total Gate Charge (nC)
G
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
10000
1000.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
T
= 175°C
100.0
10.0
1.0
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
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AUIRF3205Z/S
2.5
2.0
1.5
1.0
0.5
120
100
80
60
40
20
0
I
= 66A
LIMITED BY PACKAGE
D
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 9.
Maximum Drain Current vs.
Fig 10.
Normalized On-Resistance
Case Temperature
vs. Temperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF3205Z/S
15V
DRIVER
+
L
V
DS
350
300
250
200
150
100
50
ID
TOP
27A
47A
D.U.T
AS
R
G
V
BOTTOM 66A
DD
–
I
A
20V
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Fig 12c.
Maximum Avalanche Energy vs. Drain Current
4.0
I
= 250µA
D
3.0
2.0
1.0
Fig 13a.
Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
T
J
Qgs1
Qgs2
Qgd
Qgodr
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Waveform
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AUIRF3205Z/S
1000
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche
failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
200
160
120
80
TOP
BOTTOM 10%
Duty Cycle
= 66A
Single Pulse
I
D
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
40
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy vs. Temperature
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AUIRF3205Z/S
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
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AUIRF3205Z/S
D
2
Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AUIRF3205ZS
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
10
2015-11-13
AUIRF3205Z/S
D
2
Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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2015-11-13
AUIRF3205Z/S
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-220 Pak
D
2
-Pak
N/A
Moisture Sensitivity Level
MSL1
Class M4 (+/- 425V)
†
AEC-Q101-002
Class H1C (+/- 2000V)
†
AEC-Q101-001
Class C5 (+/- 1125V)
†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
11/13/2015
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
2015-11-13
