Infineon-Technologies-AUIRF540Z
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AUIRF540Z
AUTOMOTIVE GRADE
AUIRF540ZS
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
100V
R
DS(on)
typ.
21m
max.
26.5m
I
D
36A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
S
S
D
G
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Base part number
AUIRF540Z
Package Type
TO-220
Orderable Part Number
Quantity
50
50
800
AUIRF540Z
AUIRF540ZS
AUIRF540ZSTRL
Tube
Tape and Reel Left
AUIRF540ZS
D
2
-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
36
A
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
25
140
92
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
0.61
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
83
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
120
I
AR
See Fig.15,16, 12a, 12b
A
E
AR
T
J
Repetitive Avalanche Energy
mJ
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
1.64
–––
62
Units
R
JC
R
CS
R
JA
R
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
HEXFET® is a registered trademark of Infineon.
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2017-09-22
AUIRF540Z/S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
100 ––– –––
––– 0.093 ––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
–––
2.0
36
21
26.5
4.0
V
GS
= 10V, I
D
= 22A
m
V
S
V
GS(th)
–––
––– –––
20
V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
V
V
DS
= 25V, I
D
= 22A
DS
=100V, V
GS
= 0V
––– –––
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 200
––– –––
-200
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= 20V
GS
= -20V
V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
42
9.7
15
15
51
43
39
63
I
D
= 22A
nC V
DS
= 80V
GS
= 10V
–––
–––
–––
–––
–––
–––
V
V
DD
= 50V
I
D
= 22A
R
G
= 12
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
––– 1770 –––
––– 180 –––
––– 100 –––
––– 730 –––
––– 110 –––
––– 170 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
pF
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ.
Max. Units
––– –––
36
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 22A,V
GS
= 0V
Continuous Source Current
(Body Diode)
I
S
A
Pulsed Source Current
(Body Diode)
I
SM
––– ––– 140
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
1.3
50
62
V
–––
–––
33
41
ns T
J
= 25°C ,I
F
= 22A, V
DD
= 50V
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.46mH, R
G
= 25
, I
AS
= 20A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is
a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, T
J
= 25°C, L = 0.46mH, R
G
= 25
, I
AS
= 20A, V
GS
=10V.
This is only applied to TO-220AB package.
.
This is applied to D
2
Pak When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
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AUIRF540Z/S
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
1
10
10
100
1
0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
80
60
40
20
0
1000
100
10
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
T
= 25°C
J
V
= 10V
DS
380µs PULSE WIDTH
V
= 25V
DS
60µs PULSE WIDTH
1
0
10
D,
20
30
40
50
4.0
5.0
6.0 7.0
I
Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
GS
Fig. 4
Typical Forward Transconductance
Fig. 3
Typical Transfer Characteristics
vs. Drain Current
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AUIRF540Z/S
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0
V
,
f = 1 MHZ
GS
I =
22A
D
C
C
C
= C
+ C
, C
SHORTED
iss
gs
gd
ds
V
= 80V
= C
DS
rss
oss
gd
VDS= 50V
VDS= 20V
= C
+ C
ds
gd
Ciss
4
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
V
Q
Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1
1msec
T
= 25°C
Tc = 25°C
Tj = 175°C
Single Pulse
J
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
, Source-toDrain Voltage (V)
DS
SD
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
2017-09-22
Forward Voltage
4
AUIRF540Z/S
3.0
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
I
= 22A
D
V
= 10V
GS
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Junction Temperature (°C)
J
J
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs. Case Temperature
vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1
E
-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF540Z/S
15V
180
160
140
120
100
80
I
DRIVER
+
L
D
V
DS
TOP
8.3A
14A
BOTTOM 20A
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
60
40
V
(BR)DSS
20
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
I
AS
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Id
Vds
Vgs
4.0
3.5
Vgs(th)
I
= 250µA
D
3.0
2.5
2.0
1.5
Qgs1
Qgs2
Qgd
Qgodr
Fig 13a.
Gate Charge Waveform
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
T
J
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
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AUIRF540Z/S
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs. Pulse width
100
90
80
70
60
50
40
30
20
10
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
Single
P
u
lse
BOTTOM 10%
Duty C
y
cle
= 20A
I
D
1. Avalanche
failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs. Temperature
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AUIRF540Z/S
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
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AUIRF540Z/S
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRF540Z
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
TO-220AB package
is not recommended for Surface Mount Application.
9
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AUIRF540Z/S
D
2
Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AUIRF540ZS
Date Code
Y= Year
WW= Work Week
IR Logo
Lot Code
10
2017-09-22
AUIRF540Z/S
D
2
Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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AUIRF540Z/S
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-220AB
D
2
-Pak
N/A
Moisture Sensitivity Level
MSL1
Class M4 (400V)
†
Machine Model
AEC-Q101-002
Class H1B (1000V)
†
AEC-Q101-001
Class C3 (750V)
†
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
9/30/2015
09/22/2017
Corrected typo error on part marking on pages 9,10.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
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