Infineon-Technologies-AUIRF7484QTR
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AUTOMOTIVE GRADE
AUIRF7484Q
HEXFET
®
Power MOSFET
40V
Features
Advanced Planar Technology
Low On-Resistance
150°C Operating Temperature
Fast Switching
A
V
DSS
A
1
2
3
4
8
7
S
S
S
G
D
D
R
DS(on)
max.
I
D
6
5
D
D
10m
Fully Avalanche Rated
Top View
14A
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tape and Reel
Base part number
Package Type
Orderable Part Number
Quantity
4000
AUIRF7484Q
SO-8
AUIRF7484QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
A
= 25°C
Parameter
Max.
14
Units
A
Continuous Drain Current
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current
11
110
2.5
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
0.02
W/°C
V
mJ
A
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 8.0
230
I
AR
Avalanche Current
See Fig.19,20, 16b, 16c
E
AR
T
J
T
STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
mJ
-55 to
+ 150
°C
Thermal Resistance
Symbol
Parameter
Junction-to-Drain Lead
Typ.
–––
–––
Max.
20
Units
R
JL
R
JA
°C/W
Junction-to-Ambient
50
HEXFET® is a registered trademark of Infineon.
1
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AUIRF7484Q
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
40 –––
–––
––– 0.040 ––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
––– –––
10
V
GS
= 7.0V, I
D
= 14A
m
V
S
V
GS(th)
1.0
40
–––
––– –––
20
2.0
V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
V
V
DS
= 10V, I
D
= 14A
DS
=40V, V
GS
= 0V
––– –––
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 200
––– –––
-200
V
DS
= 32V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= 8.0V
GS
= -8.0V
V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
69
9.0
16
9.3
5.0
100
–––
–––
–––
–––
I
D
= 14A
nC V
DS
= 32V
GS
= 7.0V
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
V
DD
= 20V
I
D
= 1.0A
R
G
= 6.2
ns
Turn-Off Delay Time
Fall Time
––– 180 –––
––– 58 –––
V
GS
= 7.0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3520 –––
––– 660 –––
V
GS
= 0V
pF V
DS
= 25V
ƒ = 1.0MHz
–––
76
–––
Diode Characteristics
Parameter
Min. Typ.
Max. Units
––– ––– 2.3
––– ––– 110
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 2.3A,V
GS
= 0V
Continuous Source Current
(Body Diode)
I
S
A
V
Pulsed Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
––– 59
1.3
89
ns T
J
= 25°C ,I
F
= 2.3A,
––– 110 170
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
400µs; duty cycle
2%.
Surface mounted on 1″ in square Cu board.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25
, I
AS
= 14A. (See Fig. 12)
Limited by T
Jmax
, see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
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2015-11-16
AUIRF7484Q
100000
10000
1000
100
10000
1000
100
10
VGS
7.5V
VGS
7.5V
TOP
TOP
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
BOTTOM 1.8V
10
1.8V
1
1
1.8V
0.1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
2
.
0
14A
=
I
D
1000.00
100.00
10.00
1.00
1
.
5
1
.
0
0
.
5
0
.
0
T
= 150°C
J
T
= 25°C
V
J
= 15V
DS
V
= 10V
140
GS
120
20µs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
160
0.10
°
(
C
)
T ,
J
unction Te
m
p
erature
1.0
2.0
3.0 4.0
J
V
, Gate-to-Source Voltage (V)
GS
Fig. 4
Normalized On-Resistance
Fig. 3
Typical Transfer Characteristics
vs. Temperature
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AUIRF7484Q
8
7
6
5
4
3
2
1
0
D
I
=
14A
100000
10000
1000
100
V
V
V
=
32V
20V
8V
V
C
= 0V,
f = 1 MHZ
DS
DS
DS
GS
=
=
= C
+ C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
Ciss
Coss
Crss
10
0
10
20
30
40
50
60
70
80
1
10
100
Q ,
T
otal Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
GS
= 0V
0.1
0.10
0
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
2015-11-16
Forward Voltage
4
AUIRF7484Q
15
12
9
6
Fig 10a.
Switching Time Test Circuit
3
0
25
50
75
100
125
150
°
(
C
)
T ,
C
a
s
e
T
e
m
p
erature
C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
100
D =
0
.
50
0.20
10
0.10
0.05
P
DM
0.02
1
t
1
0.01
t
2
SINGLE PULSE
(THERMA
L
R
ESPONSE)
Notes:
1. Dut
y
f
actor
D
=
t /
t
1
2
2. Pea
k
T
= P
x Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRF7484Q
9.40
9.30
9.20
9.10
9.00
8.90
8.80
8.70
8.60
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
I
= 14A
V
= 7.0V
D
GS
8.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
20
40
I ,
Drain Current (A)
D
60
80
100
120
V
Gate -to -Source Voltage
(V)
GS,
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
50
40
30
20
10
0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I
= 250µA
D
1.00
10.00
100.00
1000.00
-75 -50 -25
0
25
50
75 100
125 150
Time (sec)
T
, Temperature ( °C )
J
Fig. 14.
Typical Threshold Voltage Vs. Junction
Fig 15.
Typical Power Vs. Time
Temperature
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2015-11-16
AUIRF7484Q
15V
520
416
312
208
104
0
I
D
TOP
6.3A
11A
14A
DRIVER
L
V
DS
BOTTOM
D.U.T
AS
R
G
+
–
V
DD
I
A
20V
0.01
t
p
Fig 16b.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
(
Starting Tj, Junction Temperature
C)
Fig 16a.
Maximum Avalanche Energy
I
vs. Drain Current
AS
Fig 16c.
Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17.
Gate Charge Test Circuit
Fig 18.
Basic Gate Charge Waveform
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AUIRF7484Q
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj
= 25°C due to
avalanche losses
0.01
1
0.05
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
Fig 19.
Typical Avalanche Current vs. Pulse width
250
225
200
175
150
125
100
75
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 19, 20:
(For further info, see AN-1005 at www.infineon.com)
BOTTOM 10%
Duty Cycle
I
= 14A
D
1. Avalanche
failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 16b, 16c.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
50
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 11, 16).
25
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
0
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 11)
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 20.
Maximum Avalanche Energy
vs. Temperature
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AUIRF7484Q
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
I
N
CHES
M
I
LLI
M
E
TERS
D
I
M
A
D
B
M
I
N
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
.0532
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
0.25 [.010]
A
.1497
e
.050 BASIC
.025 BASIC
1.27 BASIC
e 1
H
K
0.635 BASIC
.2284
.0099
.016
0°
.2440
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
.0196
.050
8°
e
6X
L
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F
O
O
T
P
R
0
I N
. 7
T
N
1
2
3
4
5
O
T
D
C
D
O
E
S
:
.
.
.
.
I M
O
E
N
S
I O
N
L
I N
I N
G
&
T
O
E
L
E
R
A
N
C
I N
G
P
E
R
A
S
M
E
Y
1
4
. 5
H
M
– 1
] .
9
9
4
.
8
X
2
[
. 0
2
8 ]
N
T
R
O
L
G
D
I M
N
S
I O
N
:
M
I L
L
I M
E T E R
I M
U
E
N
S
I O
N
S
A
R
E
S
H
O
W
N
I N
M
E
I L
L
I M
U
E
T
E
R
S
[
I N
C
E S
T
L
I N
E
C
O
N
F
O
R
M
S
T
O
J
E
D
C
O
T
L
I N
E
M
S
– 0
1
2
A
A
.
D
M
I M
O
E
N
D
S
P
I O
R
N
O
D
O
U
E
S
N
N
O
S
T
N
I N
O
C
L
T
U
O
D
E
E
X
M
C
O
E
L
D
P
R
. 1
O
5
T
[ . 0
R
U
0
S
]
I O
N
S
S
.
.
L
T
T
R
S
I O
T
E
D
0
6
.
.
6
. 4
6
[
. 2
5 5 ]
6
7
D
M
I M
O
E
N
D
S
P
I O
R
N
O
D
R
O
U
E
S
N
N
O
S
T
N
I N
O
C
L
T
U
O
D
E
E
X
M
C
O
E
L
D
P
R
. 2
O
5
T
R
U
S
]
I O
N
L
S
I O
T
E
D
0
[ . 0
1 0
D
A
I M
S
E
N
B
S
S
I O
N
A
I S
E
T
H
E
L
E
N
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
D
E
R
I N
G
T
O
U
T
R
T
.
3
X
1
. 2
7
[
. 0
5
0 ]
8
X
1 .
7 8
[ . 0
7 0 ]
SO-8 Part Marking Information
9
2015-11-16
AUIRF7484Q
SO-8 Tape and Reel
(
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
10
2015-11-16
AUIRF7484Q
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M3 (+/- 300V)
†
AEC-Q101-002
Moisture Sensitivity Level
Machine Model
Class H1C (+/- 2000V)
†
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)
†
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
11/16/2015
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
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(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
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failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-11-16
