Infineon-Technologies-AUIRF7799L2TR
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AUTOMOTIVE GRADE
AUIRF7799L2TR
Automotive DirectFET
®
Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
V
(BR)DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
Q
g (typical)
250V
32m
38m
35A
110nC
S
S
S
S
Automotive Qualified *
D
G
S
D
S
S
S
DirectFET
®
ISOMETRIC
Applicable DirectFET
®
Outline and
Substrate Outline
L8
L4
SB
SC
M2
M4
L6
L8
Description
The AUIRF7799L2TR combines the latest Automotive HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET
®
package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
®
Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
®
packaging
platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
AUIRF7799L2
DirectFET Large Can
AUIRF7799L2TR
Tape and Reel
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
250
±30
35
Units
V
DS
V
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
25
6.6
375
140
125
63
A
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
P
D
@T
A
= 25°C
Power Dissipation
Power Dissipation
W
Power Dissipation
4.3
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
325
mJ
A
mJ
I
AR
E
AR
T
P
Avalanche Current
See Fig. 16, 17, 18a, 18b
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
270
°C
T
J
-55 to
+ 175
T
STG
Storage Temperature Range
HEXFET® is a registered trademark of Infineon.
1
2015-10-5
AUIRF7799L2TR
Thermal Resistance
Symbol
R
JA
Parameter
Typ.
–––
12.5
20
Max.
35
Units
°C/W
W/°C
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
1.2
R
JA
R
JA
–––
R
J-Can
Junction-to-PCB Mounted
–––
0.5
R
J-PCB
Linear Derating Factor
0.83
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min. Typ. Max. Units
250 ––– –––
––– 0.12 ––– V/°C
Reference to 25°C, I
D
= 2.0mA
Conditions
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
–––
3.0
32
4.0
-13
38
V
GS
= 10V, I
D
= 21A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
5.0
V
DS
= V
GS
, I
D
= 250µA
DS
= 50V, I
D
= 21A
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
––– mV/°C
V
GS(th)
/
T
J
gfs
54
–––
–––
–––
–––
20
S
V
V
DS
= 250V, V
GS
= 0V
DS
= 250V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
µA
mA
I
DSS
I
GSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
1
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
nA
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Min. Typ. Max. Units
Total Gate Charge
Conditions
Q
g
Q
gs1
–––
–––
–––
–––
–––
–––
–––
110
26
165
–––
–––
V
DS
= 125V
GS
= 10V
V
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
I
D
= 21A
Q
gs2
Q
gd
5.7
39
nC
See Fig.11
Q
godr
39
–––
–––
–––
Q
sw
45
Q
oss
R
G
33
V
DS
= 16V, V
GS
= 0V
nC
Internal Gate Resistance
Turn-On Delay Time
Rise Time
––– 0.73 –––
––– 36.3 –––
––– 33.5 –––
––– 73.9 –––
––– 26.6 –––
––– 6714 –––
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 125V, V
GS
= 10V
I
D
= 21A
ns
Turn-Off Delay Time
Fall Time
R
G
= 6.2
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
V
GS
= 0V
V
DS
= 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
606
157
–––
–––
ƒ = 1.0 MHz
pF
––– 5063 –––
––– 217 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 200V, ƒ = 1.0 MHz
Notes
through
are on page 3
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2015-10-5
AUIRF7799L2TR
Diode Characteristics
Symbol Parameter
Min. Typ. Max.
Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
I
S
–––
–––
–––
–––
35
A
G
Pulsed Source Current
(Body Diode)
I
SM
140
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
132
1.3
V
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
DD
= 50V
dv/dt = 100A/µs
198
ns
nC
––– 1412
2118
Q
rr
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in.
square Cu board
(still air).
Click on this section to link to the appropriate technical paper.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.42mH, R
G
= 25
, I
AS
= 21A.
Pulse width
400µs; duty cycle
2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
3
2015-10-5
AUIRF7799L2TR
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
1
5.0V
60µs PULSE WIDT
60µs PULSE WIDT
Tj = 175°C
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
200
60
55
50
45
40
35
30
25
I
= 21A
D
T
= 25°C
180
160
140
120
100
80
J
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T
= 125°C
J
60
40
T
= 25°C
J
20
4
8
12
16
20
0
20
40
60
80
100
V
Gate -to -Source Voltage
(V)
I
, Drain Current (A)
GS,
D
Fig. 4
Typical On-Resistance vs. Drain Current
Fig. 3
Typical On-Resistance vs. Gate Voltage
1000
3.0
V
= 50V
I
= 21A
DS
60µs PULSE WIDTH
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
T
= 175°C
J
TJ = 25°C
TJ = -40°C
0.1
3
4
5
6
7
-60 -40 -20
0 20
40 60 80
10
0
1
2
0
1
4
0
1
6
0
1
80
, Junction Temperature (°C)
T
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6.
Normalized On-Resistance vs. Temperature
2015-10-5
Fig 5.
Typical Transfer
Characteristics
4
AUIRF7799L2TR
1000
100
10
6.0
5.0
4.0
3.0
2.0
1.0
T
= 175°C
J
TJ = 25°C
TJ = -40°C
I
= 250µA
D
ID = 1.0mA
ID = 1.0A
1
V
= 0V
GS
0.1
-75 -50 -25
0
25 50 75
100 125 150 175
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, Source-to-Drain Voltage (V)
1
T
, Temperature ( °C )
V
J
SD
Fig 8.
Typical Source-Drain Diode Forward Voltage
Fig. 7
Typical Threshold Voltage vs.
Junction Temperature
100000
V
= 0V,
f = 1 MHZ
200
GS
C
C
C
= C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C
+ C
ds
160
120
80
gd
T
= 25°C
10000
1000
100
J
C
iss
T
= 175°C
J
C
oss
C
rss
40
V
= 50V
DS
20µs PULSE WIDTH
0
1
10
100
1000
0
20
I
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
DS
,Drain-to-Source Current (A)
D
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 9.
Typical Forward Trans conductance vs. Drain Current
14.0
40
I
= 21A
D
12.0
10.0
8.0
V
V
= 200V
= 125V
DS
DS
30
20
10
0
VDS= 50V
6.0
4.0
2.0
0.0
0
20 40 60 80
100 120 140 160
25
50
75
100
125
150
175
Q , Total
Gate Charge (nC)
G
T
, Case Temperature (°C)
C
Fig 12.
Maximum Drain Current vs. Case Temperature
Fig 11.
Typical Gate Charge vs.
Gate-to-Source Voltage
5
2015-10-5
AUIRF7799L2TR
1000
100
10
1400
1200
1000
800
600
400
200
0
I
OPERATION IN THIS AREA
LIMITED BY R
(on)
D
DS
TOP
1.33A
2.53A
BOTTOM 21A
100µsec
DC
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
Starting T
, Junction Temperature (°C)
DS
J
Fig 14.
Maximum Avalanche Energy vs. Temperature
Fig 13.
Maximum Safe Operating Area
10
1
D = 0.50
R
1
R
1
R
2
R
2
0.20
Ri (°C/W)
0.38829
i (sec)
0.000787
J
J
0.10
C
C
0.1
1
1
2
2
0.05
0.02
0.8117
0.006586
Ci=
i
Ri
Ci=
i
Ri
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
1
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16.
Typical Avalanche Current vs. Pulse Width
6
2015-10-5
AUIRF7799L2TR
350
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 16, 17:
TOP
BOTTOM 1.0%
Duty Cycle
= 21A
Single Pulse
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche
failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 16, 17).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
0
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 15)
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
Fig 17.
Maximum Avalanche Energy vs. Temperature
E
AS (AR)
= P
D (ave)
·t
av
Fig 18b.
Unclamped Inductive Waveforms
Fig 18a.
Unclamped Inductive Test Circuit
VDD
Fig 19a.
Gate Charge Test Circuit
Fig 19b.
Gate Charge Waveform
Fig 20a.
Switching Time Test Circuit
Fig 20b.
Switching Time Waveforms
7
2015-10-5
AUIRF7799L2TR
DirectFET
®
Board Footprint, L8
(Large Size Can).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
8
2015-10-5
AUIRF7799L2TR
DirectFET
®
Outline Dimension, L8
(Large Size Can).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
. This includes
all recommendations for stencil and
substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN
MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.215
0.029
0.007
0.003
A
B
C
D
E
F
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
0.211
0.027
0.003
0.001
G
H
J
K
L
L1
M
P
R
DirectFET
®
Part Marking
“AU” = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates “Lead-Free”
9
2015-10-5
AUIRF7799L2TR
DirectFET
®
Tape & Reel Dimension (Showing component orientation)
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts, ordered as AUIRF7799L2TR.
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
MIN
MAX
12.10
4.10
A
B
C
D
E
F
4.69
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
REEL DIMENSIONS
0.154
0.623
0.291
0.283
0.390
0.059
0.059
STANDARD OPTION
(QTY 4000)
METRIC
IMPERIAL
16.30
7.60
CODE
MIN
MAX
N.C
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
330.00
20.20
12.80
1.50
7.40
N.C
N.C
10.10
N.C
0.520
N.C
13.20
N.C
G
H
1.60
0.063
99.00
N.C
3.940
0.880
0.720
0.760
100.00
22.40
18.40
19.40
G
H
0.650
0.630
16.40
15.90
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2015-10-5
AUIRF7799L2TR
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Large Can
MSL1
Moisture Sensitivity Level
Class M4 (+/- 800V)
†
AEC-Q101-002
Class H2 (+/- 4000V)
†
AEC-Q101-001
N/A
Machine Model
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
10/5/2015
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-10-5
