Infineon-Technologies-AUIRFP4409
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AUTOMOTIVE GRADE
AUIRFP4409
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Low On-Resistance
V
DSS
300V
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
R
DS(on) typ.
56m
69m
38A
max
I
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications
.
S
D
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
AUIRFP4409
TO-247AC
Tube
25
AUIRFP4409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
38
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
27
A
152
341
2.3
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
± 20
541
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
T
J
T
STG
Operating Junction and
-55 to
+ 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
R
JC
R
CS
R
JA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
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AUIRFP4409
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
300 ––– –––
––– 0.24 ––– V/°C
Reference to 25°C, I
D
= 3.5mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
R
DS(on)
–––
3.0 ––– 5.0
––– –––
20
56
69
V
GS
= 10V, I
D
= 24A
m
V
GS(th)
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=300 V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
––– –––
250
V
DS
=300V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
––– ––– 100
––– –––
-100
V
GS
= 20V
GS
= -20V
I
GSS
R
G
nA
V
–––
1.3
–––
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
gfs
Q
g
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
45
––– –––
S
V
DS
= 50V, I
D
=24A
I
D
= 24A
–––
–––
–––
–––
–––
83
28
26
18
23
125
42
Q
gs
Q
gd
t
d(on)
t
r
nC V
DS
= 150V
GS
= 10V
39
V
–––
–––
V
DD
= 195V
I
D
= 24A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
34
20
–––
–––
R
G
= 2.2
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 5168 –––
––– 300 –––
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
–––
77
–––
pF
V
GS
= 0V, VDS = 0V to 240V
C
oss eff.(ER)
C
oss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related)
––– 196 –––
See Fig.11
Output Capacitance (Time Related)
––– 265 –––
V
GS
= 0V, VDS = 0V to 240V
Min. Typ.
Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
––– –––
40
A
G
I
SM
––– ––– 160
––– –––
1.3
S
V
SD
Diode Forward Voltage
V
T
J
= 25°C,I
S
= 24A,V
GS
= 0V
––– 302 –––
––– 379 –––
––– 1739 –––
––– 2497 –––
T
J
= 25°C
V
DD
= 255V
I
F
= 24A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
I
RRM
–––
13
–––
T
J
= 25°C
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Recommended max
EAS limit, starting T
J
= 25°C, L = 2.05mH, R
G
= 50
, I
AS
= 24A, V
GS
=10V.
I
SD
24A, di/dt
1771A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1″ square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
R
is measured at T
J
approximately 90°C
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AUIRFP4409
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
1
5.0V
0.1
0.01
60µs
Tj = 25°C
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
I
= 24A
D
V
= 10V
GS
100
T
= 175°C
J
T
= 25°C
J
10
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
-60
-20
T
20
60
100
140
180
2
4
6
8
10
12
14
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
100000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 24A
= C
+ C
, C
SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
= 240V
= 150V
DS
C
= C
+ C
oss
ds
gd
10000
1000
100
V
DS
C
VDS= 60V
iss
C
6.0
oss
C
4.0
rss
2.0
10
0.0
1
10
100
1000
0
20
40
Q , Total
Gate Charge (nC)
G
60
80
100
120
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
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AUIRFP4409
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode Forward Voltage
42
370
Id = 3.5mA
360
35
28
21
14
7
350
340
330
320
310
300
290
280
270
0
25
50
75
100
125
150
175
-60
-20
20
T ,
Temperature ( °C )
J
60
100
140
180
T
, Case Temperature (°C)
C
Fig 10.
Drain-to–Source Breakdown Voltage
Fig 9.
Maximum Drain Current vs. Case Temperature
9.0
6.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5.0
4.0
3.0
2.0
1.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
-50
0
50 100
150 200 250 300 350
-75
-25
25
75
125
175
225
T
, Temperature ( °C )
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11.
Typical C
oss
Stored Energy
Fig 12.
Threshold Voltage vs. Temperature
2017-09-21
4
AUIRFP4409
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
60
50
40
30
20
10
I
= 24A
I
= 16A
F
F
V
= 255V
V
= 255V
R
R
50
40
30
20
10
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 14.
Typical Recovery Current vs. dif/dt
Fig 15.
Typical Recovery Current vs. dif/dt
3500
5000
4500
4000
3500
3000
2500
2000
1500
1000
I
= 16A
I
= 24A
F
F
V
= 255V
V
= 255V
R
R
3000
2500
2000
1500
1000
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 16.
Typical Stored Charge vs. dif/dt
Fig 17.
Typical Stored Charge vs. dif/dt
2017-09-21
5
AUIRFP4409
Fig 18.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 19a.
Unclamped Inductive Test Circuit
Fig 19b.
Unclamped Inductive Waveforms
Fig 20a.
Switching Time Test Circuit
Fig 20b.
Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 21b.
Gate Charge Waveform
Fig 21a.
Gate Charge Test Circuit
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AUIRFP4409
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUIRFP4409
Date Code
IR Logo
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
TO-247AC package is not recommended for Surface Mount Application.
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AUIRFP4409
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This
part number(s) passed Automotive qualification.
Infineon’s Industrial and Consumer qualification level is granted by ex-
tension of the higher Automotive level.
TO-247AC
N/A
Class M4 (+/- 500V)
†
AEC-Q101-002
Class H2 (+/- 4000V)
†
AEC-Q101-001
Class C5 (+/- 2000)
†
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected typo error on package outline and part marking on page 7.
9/21/2017
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
8
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