Infineon-Technologies-AUIRFS3306
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AUTOMOTIVE GRADE
AUIRFS3306
HEXFET
®
Power MOSFET
Features
V
DSS
60V
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
R
DS(on)
typ.
max.
3.3m
4.2m
160A
120A
I
D (Silicon Limited)
I
D (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
S
G
G
Gate
D
S
Drain
Source
Standard Pack
Form
Tube
Base part number
Package Type
Orderable Part Number
Quantity
50
800
AUIRFS3306
AUIRFS3306TRL
AUIRFS3306
D
2
-Pak
Tape and Reel Left
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
Parameter
Max.
160
Units
A
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
110
120
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
620
230
1.5
P
D
@T
C
= 25°C
W
W/°C
V
mJ
A
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
184
I
AR
Avalanche Current
See Fig.14,15, 22a, 22b
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
14
-55 to
+ 175
300
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
T
STG
°C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
0.65
R
JC
R
JA
°C/W
Junction-to-Ambient (PCB Mount)
–––
40
HEXFET® is a registered trademark of Infineon.
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AUIRFS3306
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
60 –––
–––
––– 0.07 ––– V/°C
Reference to 25°C, I
D
= 5mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
R
DS(on)
–––
2.0
3.3
4.2
4.0
V
GS
= 10V, I
D
= 75A
m
V
GS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
Internal Gate Resistance
–––
V
S
Ω
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 50V, I
D
= 75A
230 ––– –––
RG
–––
0.7
–––
20
––– –––
V
DS
= 60V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– –––
-100
V
DS
= 48V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= 20V
GS
= -20V
V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
85
20
26
59
15
76
40
77
120
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A
V
DS
= 30V
V
GS
= 10V
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
nC
ns
V
DD
= 30V
I
D
= 75A
R
G
= 2.7
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
V
GS
= 10V
C
iss
C
oss
Input Capacitance
Output Capacitance
––– 4520 –––
––– 500 –––
––– 250 –––
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
C
rss
Reverse Transfer Capacitance
pF
C
oss eff.(ER)
C
oss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related)
––– 720 –––
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
Effective Output Capacitance (Time Related)
––– 880 –––
Min. Typ.
Max. Units
Conditions
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
I
S
––– –––
160
A
––– ––– 620
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
integral reverse
I
SM
V
SD
t
rr
p-n junction diode.
T
J
= 25°C,I
S
= 75A,V
GS
= 0V
T
J
= 25°C
––– –––
1.3
–––
–––
–––
–––
–––
V
–––
–––
–––
–––
–––
31
35
34
45
1.9
Reverse Recovery Time
Reverse Recovery Charge
ns
V
R
= 51V,
I
F
= 75A
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
Q
rr
nC
A
di/dt = 100A/µs
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating;
pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.04mH, R
G
= 25
, I
AS
= 96A, V
GS
=10V. Part not recommended for use above this value.
I
SD
75A, di/dt
1400A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
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AUIRFS3306
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
I
= 75A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
T
, Junction Temperature (°C)
, Gate-to-Source Voltage (V)
J
GS
Fig. 4
Normalized On-Resistance vs. Temperature
Fig. 3
Typical Transfer Characteristics
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I
= 75A
D
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
= 48V
C
C
= C
DS
rss
oss
gd
16
12
8
VDS= 30V
VDS= 12V
= C
+ C
ds
gd
Ciss
4
Coss
Crss
0
1
10
100
0
20
40
60
80
100 120 140
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3306
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100µsec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig. 7
Typical Source-to-Drain Diode
80
70
60
50
180
160
140
120
100
80
I
= 5mA
D
Limited By Package
60
40
20
0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Drain-to-Source Breakdown Voltage
800
1.5
I
D
TOP
13A
18A
96A
600
400
200
0
BOTTOM
1.0
0.5
0.0
25
50
75
100
125
150
175
0
10
V
20
30
40
50
60
Starting T
, Junction Temperature (°C)
Drain-to-Source Voltage (V)
J
DS,
Fig 12.
Maximum Avalanche Energy vs. Drain Current
Fig 11.
Typical C
OSS
Stored Energy
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AUIRFS3306
1
0.1
D = 0.50
0.20
0.10
R
1
R
1
R
2
R
2
Ri (°C/W)
I (sec)
0.00028
0.005548
0.05
0.02
J
C
J
1
0.249761
0.400239
2
1
2
0.01
0.01
Ci=
i
Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs. Pulse width
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche
failures assumption:
TOP
BOTTOM 1%
Duty Cycle
= 96A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
40
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
0
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
J
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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AUIRFS3306
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
16
12
8
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
ID = 150µA
I
= 30A
F
4
V
T
= 51V
R
= 125°C
= 25°C
J
J
T
0
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
100 200 300 400 500 600 700 800 900
1000
T
di /
dt – (A / µs)
f
J
Fig. 17
– Typical Recovery Current vs. di
f
/dt
Fig 16.
Threshold Voltage vs. Temperature
16
350
300
250
200
150
12
8
I
= 45A
I =
30A
F
100
50
0
F
4
0
V
T
= 51V
V
= 51V
R
R
= 125°C
= 25°C
T
= 125°C
= 25°C
J
J
J
J
T
T
100 200 300 400 500 600 700 800 900
1000
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
di /
dt – (A / µs)
f
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig. 19
– Typical Stored Charge vs. di
f
/dt
350
300
250
200
150
100
50
I
= 45A
F
V
= 51V
R
T
= 125°C
= 25°C
J
J
T
0
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
Fig. 20
– Typical Stored Charge vs. di
f
/dt
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AUIRFS3306
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
I
AS
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
Fig 23b.
Switching Time Waveforms
Fig 23a.
Switching Time Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a.
Gate Charge Test Circuit
Fig 24b.
Gate Charge Waveform
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AUIRFS3306
D
2
– Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
– Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS3306
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
8
2017-10-11
AUIRFS3306
D
2
– Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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2017-10-11
AUIRFS3306
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
D
2
-Pak
MSL1
Class M4 (+/- 800V)
†
AEC-Q101-002
Class H2 (+/- 3000V)
†
AEC-Q101-001
Class C5 (+/- 2000V)
†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected typo error on part marking on page 8.
10/11/2017
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2017-10-11
