Infineon-Technologies-AUIRFS4127
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AUIRFS4127
AUTOMOTIVE GRADE
Features
HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
200V
R
DS(on)
typ.
max
18.6m
22m
I
D
72A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
S
G
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
50
Tube
AUIRFS4127
AUIRFS4127
D
2
-Pak
Tape and Reel Left
800
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Max.
72
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
A
51
300
375
2.5
± 20
57
P
D
@T
C
= 25°C
W
W/°C
V
V/ns
mJ
A
V
GS
dv/dt
E
AS
I
AR
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
250
See Fig. 14, 15, 22a, 22b
-55 to
+ 175
mJ
E
AR
Repetitive Avalanche Energy
T
J
T
STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
°C
300(1.6mm from case)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Typ.
–––
–––
Max.
0.4
40
Units
Junction-to-Case
Junction-to-Ambient
°C/W
HEXFET® is a registered trademark of Infineon.
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AUIRFS4127
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.23 ––– V/°C
Reference to 25°C, I
D
= 5mA
Conditions
V
GS
= 0V, I
D
= 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
––– 18.6
22
5.0
–––
20
V
GS
= 10V, I
D
= 44A
m
V
S
3.0
79
–––
–––
–––
–––
V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
V
V
V
DS
= 50V, I
D
= 44A
DS
= 200V, V
GS
= 0V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
–––
–––
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
250
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
–––
–––
–––
––– -100
3.0 –––
100
V
GS
= 20V
GS
= -20V
nA
V
R
G
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Total Gate Charge
Min. Typ. Max. Units
––– 100 150
Conditions
Q
g
I
D
= 44A
V
V
DS
= 100V
GS
= 10V
Q
gs
Q
gd
Q
sync
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
–––
–––
–––
30
31
69
–––
–––
–––
nC
ns
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
17
18
56
22
–––
–––
–––
–––
V
DD
= 130V
I
D
= 44A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
DS
= 50V
––– 5380 –––
––– 410 –––
–––
V
ƒ = 1.0 MHz (See Fig. 5)
86
–––
pF
C
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 360 –––
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 590 –––
V
GS
= 0V, V
DS
= 0V to 160V
V
GS
= 0V, V
DS
= 0V to 160V
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 44A, V
GS
= 0V
Continuous Source Current
(Body Diode)
I
S
–––
–––
–––
–––
72
A
Pulsed Source Current
(Body Diode)
I
SM
300
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
–––
–––
–––
136
139
458
688
8.3
1.3
–––
–––
–––
–––
–––
V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 100V,
I
F
= 44A
di/dt = 100A/µs
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
I
RRM
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.26mH, R
G
= 25
, I
AS
= 44A, V
GS
=10V. Part not recommended for use above this value.
I
SD
44A, di/dt
760A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
R
JC
value shown is at time zero.
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AUIRFS4127
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
1
0.1
0.01
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 44A
D
V
= 50V
DS
60µs PULSE WIDTH
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
0.1
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
3.0
4.0
5.0
6.0
7.0
8.0
T
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
8000
6000
4000
2000
0
16
V
C
= 0V,
f = 1 MHZ
GS
= C
+ C
, C
SHORTED
I =
44A
D
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
C
C
= C
rss
oss
gd
DS
DS
DS
= C
+ C
ds
gd
12
8
C
iss
4
C
oss
C
rss
0
1
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
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2017-03-28
AUIRFS4127
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 175°C
J
1msec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
DC
0.1
0.1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.4
1
10
100
1000
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode Forward Voltage
260
80
Id = 5mA
240
220
200
180
60
40
20
0
-60 -40 -20
0 20
40 60 80
10
0
1
2
0
1
4
0
1
6
0
1
80
, Temperature ( °C )
25
50
75
100
125
150
175
T
J
T
, Case Temperature (°C)
C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Drain-to-Source Breakdown Voltage
1000
8.0
I
D
TOP
8.2A
13A
44A
800
600
400
200
0
6.0
4.0
2.0
0.0
BOTTOM
25
50
75
100
125
150
175
0
40
80
120
160
200
Starting T
, Junction Temperature (°C)
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11.
Typical C
oss
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. Drain Current
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AUIRFS4127
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01 0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs. Pulse Width
250
200
150
100
50
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1%
Duty Cycle
= 44A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
0
t
av
= Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
Starting T
, Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)· av
t
Fig 15.
Maximum Avalanche Energy vs. Temperature
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AUIRFS4127
50
40
30
20
10
0
6.0
5.0
4.0
3.0
2.0
1.0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
I
= 29A
F
V
= 100V
= 125°C
= 25°C
R
T
T
J
J
100 200 300 400 500 600 700 800 900
1000
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
di /
dt – (A / µs)
f
T
J
Fig 16.
Threshold Voltage vs. Temperature
Fig 17.
Typical Recovery Current vs. dif/dt
60
3000
50
40
30
20
2500
2000
1500
1000
I
= 44A
I =
29A
F
F
V
= 100V
= 125°C
= 25°C
V
= 100V
= 125°C
= 25°C
R
R
10
0
500
0
T
T
J
J
J
J
T
T
100 200 300 400 500 600 700 800 900
1000
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
di /
dt – (A / µs)
f
Fig 18.
Typical Recovery Current vs. dif/dt
Fig 19.
Typical Stored Charge vs. dif/dt
3000
2500
2000
1500
1000
500
I
= 44A
F
V
= 100V
= 125°C
= 25°C
R
T
J
J
T
0
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
Fig 20.
Typical Stored Charge vs. dif/dt
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AUIRFS4127
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 22a.
Unclamped Inductive Test Circuit
Fig 22b.
Unclamped Inductive Waveforms
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 24b.
Gate Charge Waveform
Fig 24a.
Gate Charge Test Circuit
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2017-03-28
AUIRFS4127
D
2
Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AUFS4127
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
8
2017-03-28
AUIRFS4127
D
2
Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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2017-03-28
AUIRFS4127
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
D
2
-Pak
MSL1
Class H2 (+/- 4000V)
†
AEC-Q101-001
Class C5 (+/- 2000V)
†
AEC-Q101-005
Yes
Human Body Model
Charged Device Model
ESD
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
10/27/2015
Removed TO-262 Pak “AUIRFSL4127” this devices TO-262 Pak was never released and this part was
03/28/2017
erroneously added to the datasheet. –All pages
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
2017-03-28
