Infineon-Technologies-AUIRFZ24NSTRL
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AUIRFZ24NS
AUIRFZ24NL
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
V
DSS
55V
0.07
17A
R
DS(on)
max.
I
D
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of
this design
are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
S
S
D
G
G
G
Gate
D
Drain
S
Source
Standard Pack
Form
Tube
Base part number
AUIRFZ24NL
Package Type
TO-262
Orderable Part Number
Quantity
50
AUIRFZ24NL
AUIRFZ24NS
AUIRFZ24NSTRL
Tube
Tape and Reel Left
50
800
AUIRFZ24NS
D
2
-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
17
A
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
12
68
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
3.8
45
W
0.3
W/°C
V
mJ
A
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
71
I
AR
Avalanche Current
10
4.5
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
6.8
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
°C
300
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
–––
3.3
R
JC
R
JA
°C/W
–––
40
HEXFET® is a registered trademark of Infineon.
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AUIRFZ24NS/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
55 –––
–––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
GS
= 0V, I
D
= 250µA
––– 0.052 ––– V/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
/
T
J
R
DS(on)
––– –––
0.07
V
GS
= 10V, I
D
= 10A
V
V
GS(th)
gfs
Gate Threshold Voltage
2.0
4.5
–––
––– –––
25
4.0
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 10A
Forward Trans conductance
S
––– –––
V
DS
= 55V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– –––
-100
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
––– –––
––– –––
––– –––
20
5.3
7.6
–––
–––
–––
–––
I
D
= 10A
nC V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
–––
–––
–––
–––
4.9
34
19
27
V
DD
= 28V
I
D
= 10A
R
G
= 24
R
D
= 2.6
, See Fig. 10
Between lead,
and center of die contact
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
L
S
Internal Source Inductance
–––
7.5
–––
nH
C
iss
C
oss
C
rss
Input Capacitance
––– 370 –––
––– 140 –––
V
GS
= 0V
pF V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
Output Capacitance
Reverse Transfer Capacitance
–––
65
–––
Diode Characteristics
Parameter
Min. Typ.
Max. Units
Conditions
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
I
S
––– –––
17
68
A
Pulsed Source Current
(Body Diode)
integral reverse
I
SM
––– –––
––– –––
p-n junction diode.
T
J
= 25°C,I
S
= 10A,V
GS
= 0V
T
J
= 25°C ,I
F
= 10A
di/dt = 100A/µs
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.3
83
V
–––
56
ns
nC
––– 120 180
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
on
Forward Turn-On Time
Notes:
Repetitive rating;
pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 1.0mH, R
G
= 25
, I
AS
= 10A, V
GS
=10V. (See fig.12)
I
SD
10A, di/dt
280A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
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AUIRFZ24NS/L
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 17A
D
T =
25°C
J
T
J
= 175°C
V
DS
= 25V
20µs PULSE WIDTH
1
0
A
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
4
5
6
7
8
9
T ,
Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature
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AUIRFZ24NS/L
20
16
12
8
700
600
500
400
300
200
100
0
I
= 10A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C
+ C
,
C
ds
SHORTED
V
V
= 44V
= 28V
gs
gd
DS
DS
= C
gd
= C
+ C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
4
8
12
16
20
1
10
100
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
G
DS
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
175°C
J
100
10
1
T =
25°C
J
10µs
10
100µs
1ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
10ms
V
GS
= 0V
A
100
A
1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
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AUIRFZ24NS/L
20
16
12
8
4
0
Fig 10a.
Switching Time Test Circuit
25
50
75
100
125
150
175
°
, Case Temperature
( C)
T
C
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFZ24NS/L
15V
140
120
100
80
I
D
DRIVER
+
L
V
TOP
4.2A
7.2A
BOTTOM 10A
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
60
Fig 12a.
Unclamped Inductive Test Circuit
40
20
V
(BR)DSS
t
p
V
= 25V
50
DD
0
A
175
25
75
100
125
150
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 13a.
Gate Charge Test Circuit
Fig 13b.
Gate Charge Waveform
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AUIRFZ24NS/L
Fig 14.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRFZ24NS/L
D
2
– Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
– Pak (TO-263AB) Part Marking Information
Part Number
AUIRFZ24NS
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
8
2017-10-13
AUIRFZ24NS/L
TO-262 Package Outline
(Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRFZ24NL
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
9
2017-10-13
AUIRFZ24NS/L
D
2
– Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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AUIRFZ24NS/L
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D
2
-Pak
Moisture Sensitivity Level
MSL1
TO-262
Class M2 (+/- 150V)
†
AEC-Q101-002
Class H1A (+/- 500V)
†
AEC-Q101-001
Class C5 (+/- 2000V)
†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Corrected typo error on part marking on page 8,9.
10/27/2015
10/13/2017
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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