Infineon-Technologies-AUIRFZ48ZSTRL
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PD – 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
AUIRFZ48ZS
Features
HEXFET
®
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Ultr
a
L
o
w
O
n-Resistance
175°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up
to Tjmax
D
V
(BR)DSS
R
DS(on)
max.
I
D
55V
11m
Ω
G
l
l
Lead-Free
,
R
oH
S
C
ompliant
Automotive Qualified *
61A
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area.
Additional features
of this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
D
S
S
D
D
G
G
D
2
Pak
TO-220AB
AUIRFZ48Z
AUIRFZ48ZS
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
61
Units
A
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
D
43
D
240
91
DM
P
@T
C
= 25°C
W
Maximum Power Dissipation
D
Linear Derating Factor
0.61
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
E
AS
73
120
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS
(tested)
I
AR
See Fig.12a,12b,15,16
A
E
AR
mJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
dv/dt
7.2
V/ns
°C
T
J
-55 to
+ 175
Operating Junction and
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
–––
Max.
1.64
–––
62
Units
°C/W
Parameter
R
θ
JC
Junction-to-Case
R
θ
CS
R
θ
JA
R
θ
JA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET
®
is a registered trademark of International Rectifier.
1
06/21/11
AUIRFZ48Z/ZS
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Conditions
V
(BR)DSS
ΔΒ
V
DSS
/
Δ
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
55 –––
–––
V
V
GS
= 0V, I
D
= 250
μ
A
Breakdown Voltage Temp. Coefficient
––– 0.054 –––
V/°C Reference
to 25°C, I
D
= 1mA
Static Drain-to-Source On-Resistance
–––
8.6
–––
–––
–––
–––
–––
11
4.0
–––
20
V
GS
= 10V, I
D
= 37A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 25V, I
D
= 37A
Ω
m
V
GS(th)
Gate Threshold Voltage
2.0
24
V
gfs
Forward Transconductance
Drain-to-Source Leakage Current
S
I
DSS
–––
–––
–––
–––
μ
A V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
250
200
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Conditions
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
43
11
16
15
69
35
39
4.5
64
16
nC I
D
= 37A
V
DS
= 44V
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
24
V
GS
= 10V
–––
–––
–––
–––
–––
ns
V
DD
= 28V
I
D
= 37A
t
d(off)
t
f
Ω
Turn-Off Delay Time
Fall Time
R
G
= 12
V
GS
= 10V
D
S
L
D
Internal Drain Inductance
nH Between
lead,
6mm (0.25in.)
G
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
––– 1720 –––
pF V
GS
= 0V
Output Capacitance
–––
–––
300
160
–––
–––
V
DS
= 25V
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
––– 1020 –––
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
GS
= 0V,
V
DS
= 44V,
ƒ = 1.0MHz
Output Capacitance
–––
–––
230
380
–––
–––
V
C
oss
eff.
Effective Output Capacitance
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter
Min. Typ.
Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
Continuous Source Current
(Body Diode)
–––
–––
61
A
G
I
SM
Pulsed Source Current
(Body Diode)
–––
–––
240
integral reverse
p-n junction diode.
V
SD
T =
25°C, I
= 37A, V
= 0V
Diode Forward Voltage
J
S
GS
–––
–––
1.3
V
t
rr
T =
25°C, I
= 37A, V
DD
= 30V
J F
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
20
13
31
20
ns
nC
Q
rr
t
on
di/dt = 100A/
μ
s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.11mH,
R
G
= 25
Ω
, I
AS
= 37A, V
GS
=10V. Part not
recommended for use above this value.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting T
J
= 25°C, L =0.11mH, R
G
= 25
Ω
, I
AS
= 37A, V
GS
=10V.
This is applied to D
2
Pak, when mounted on 1″ square PCB
( FR-4 or G-10 Material ).
For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is rated at T
J
of approximately 90°C.
I
SD
≤
37A, di/dt
≤
920A/
μ
s, V
DD
≤
V
(BR)DSS
T
J
≤
175°C.
,
Pulse width
≤
1.0ms; duty cycle
≤
2%.
2
AUIRFZ48Z/ZS
Qualification Information
†
Automotive
††
(per AEC-Q101)
Comments: This
part number(s) passed Automotive
qualification. IR’s
Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
TO-220AB
D
2
Pak
N/A
Moisture Sensitivity Level
MSL1
Class M4 (+/- 425V)
†††
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V)
†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V)
†††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Exceptions
to AEC-Q101 requirements are noted in the qualification report.
Highest
passing voltage.
3
AUIRFZ48Z/ZS
1000
100
10
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
10
4.5V
30
μ
s PULSE WIDTH
Tj = 175°C
30
μ
s PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
60
T
= 25°C
50
40
30
20
10
0
J
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
30
μ
s PULSE WIDTH
V
= 10V
DS
1.0
4
5
6
7
8
9
10
0
10
20
30
40
I ,Drain-to-Source
Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
4
AUIRFZ48Z/ZS
12.0
10.0
8.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I
= 37A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
rss
oss
gd
= C
+ C
ds
gd
C
C
iss
6.0
4.0
oss
2.0
C
rss
0.0
1
10
100
0
10
20
30
40
50
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
μ
sec
T
= 25°C
J
1msec
Tc = 25°C
Tj = 175°C
10msec
V
= 0V
Single Pulse
GS
1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
1
10
, Drain-to-Source Voltage (V)
100
V
V
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
ance
Forward Voltage
5
AUIRFZ48Z/ZS
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
I
= 37A
D
V
= 10V
GS
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
R
1
R
1
R
2
R
2
0.1
Ri (°C/W)
τ
i (sec)
0.9848 0.000451
0.05
0.02
0.01
τ
J
τ
J
τ
τ
C
τ
1
τ
1
Ci=
τ
i
/
Ri
τ
2
τ
2
0.6546 0.002487
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
AUIRFZ48Z/ZS
15V
300
250
200
150
100
50
I
D
TOP
3.5A
4.9A
BOTTOM 37A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250
μ
A
D
Fig 13a.
Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
25 50 75
100 125 150 175 200
1K
T
, Temperature ( °C )
J
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
7
AUIRFZ48Z/ZS
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
Δ
Tj = 25°C due to
avalanche losses
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
80
60
40
20
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
TOP
BOTTOM 1%
Duty Cycle
= 37A
Single Pulse
I
D
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
t
av
·f
Starting T
, Junction Temperature (°C)
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs. Temperature
8
AUIRFZ48Z/ZS
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
9
AUIRFZ48Z/ZS
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFZ48Z
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
IR Logo
YWWA
XX or XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
10
AUIRFZ48Z/ZS
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AUIRFZ48ZS
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
IR Logo
YWWA
XX or XX
Lot Code
11
AUIRFZ48Z/ZS
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
12
AUIRFZ48Z/ZS
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFZ48Z
AUIRFZ48ZS
TO-220
D2Pak
Tube
50
50
AUIRFZ48Z
AUIRFZ48ZS
Tube
Tape and Reel Left
800
AUIRFZ48ZSTRL
Tape and Reel Right
800
AUIRFZ48ZSTRR
13
AUIRFZ48Z/ZS
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other changes to its products and services at any time and to discontinue any product or services without
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accordance with IRs standard warranty.
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number including the designation AU.
Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
WORL
D
H
EADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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