Infineon-Technologies-AUIRLS3114Z
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AUTOMOTIVE GRADE
AUIRLS3114Z
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Enhanced dv/dt
and di/dt capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
40V
3.8m
4.9m
122A
56A
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Description
S
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of
this design
are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
G
G
Gate
D
Drain
S
Source
Standard Pack
Form
Tube
Base part number
Package Type
Orderable Part Number
Quantity
50
AUIRLS3114Z
AUIRLS3114ZTRL
AUIRLS3114Z
D
2
-Pak
Tape and Reel Left
800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
122
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wirebond Limited)
86
A
56
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
488
143
0.95
P
D
@T
C
= 25°C
W
W/°C
V
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 16
168
mJ
E
AS (Tested)
I
AR
Single Pulse Avalanche Energy (Tested)
Avalanche Current
518
See Fig.15,16, 12a, 12b
A
E
AR
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
dv/dt
T
J
2.3
V/ns
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
1.05
R
JC
R
JA
°C/W
Junction-to-Ambient (PCB Mount)
–––
40
HEXFET® is a registered trademark of Infineon.
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AUIRLS3114Z
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
40 –––
–––
––– 0.03 –––
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference
to 25°C, I
D
= 1mA
–––
1.0
3.8
1.7
4.9
2.5
V
GS
= 10V, I
D
= 56A
m
V
V
DS
= V
GS
, I
D
= 100µA
Gate Threshold Voltage Coefficient
Forward Trans conductance
––– -6.6 –––
mV/°C
V
GS(th)
gfs
103 ––– –––
S
V
DS
= 10V, I
D
= 56A
R
G(Int)
Internal Gate Resistance
–––
––– –––
––– ––– 250
––– ––– 100
––– –––
-100
0.8
–––
20
V
V
V
V
DS
= 40V, V
GS
= 0V
DS
= 40V,V
GS
= 0V,T
J
=125°C
GS
= 16V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS
= -16V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
35
11
16
28
53
I
D
= 56A
nC V
DS
= 20V
GS
= 4.5V
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
–––
–––
–––
V
V
DD
= 20V
I
D
= 56A
R
G
= 3.7
––– 271 –––
–––
–––
ns
Turn-Off Delay Time
Fall Time
43
60
–––
–––
V
GS
= 4.5V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Input Capacitance
––– 3617 –––
––– 633 –––
––– 345 –––
––– 2378 –––
––– 570 –––
––– 875 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
pF
Diode Characteristics
Parameter
Min. Typ.
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
I
S
––– –––
122
A
––– ––– 488
Pulsed Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– –––
1.3
50
48
V
T
J
= 25°C,I
S
= 56A,V
GS
= 0V
–––
–––
33
32
ns
nC
T
J
= 25°C ,I
F
= 56A, V
DD
= 20V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating;
pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.107mH, R
G
= 50
, I
AS
= 56A, V
GS
=10V. Part not recommended for use above this value.
I
SD
56A, di/dt
263A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
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AUIRLS3114Z
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
BOTTOM
2.5V
2.5V
1
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
175
150
125
100
75
T
= 25°C
J
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
50
V
= 25V
DS
25
V
= 10V
60µs PULSE WIDTH
DS
0.1
0
1
2
3
4
5
6
0
20
40
60
80
I
,Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
D
GS
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
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AUIRLS3114Z
100000
10000
1000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
56A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
= 32V
= C
+ C
ds
DS
DS
gd
= 20V
VDS= 8V
C
iss
6.0
C
oss
4.0
C
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
10 20 30 40 50 60 70 80 90
V
Q , Total
Gate Charge (nC)
G
DS
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
T
= 175°C
J
100
10
100µsec
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
2015-11-6
Forward Voltage
4
AUIRLS3114Z
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
140
120
100
80
I
= 56A
D
Wirebond Limitation
V
= 10V
GS
60
40
20
0
-60 -40 -20
T
0
20 40 60 80
10
0
1
2
0
1
4
0
1
6
0
1
80
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fg 9.
Maximum Drain Current vs.
Fig 10.
Normalized On-Resistance
Case Temperature
vs. Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRLS3114Z
15V
700
600
500
400
300
200
100
0
I
DRIVER
+
L
D
V
DS
TOP
9.6A
20A
BOTTOM 56A
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
I
AS
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Id
Vds
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Vgs
Vgs(th)
I
= 100µA
D
ID = 250µA
= 1.0mA
Qgs1
Qgs2
Qgd
Qgodr
I
D
ID = 10mA
= 1.0A
I
Fig 13a.
Gate Charge Waveform
D
-75 -50 -25
0
25 50 75
100 125 150 175
T
, Temperature ( °C )
J
Fig. 14
– Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
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AUIRLS3114Z
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Avalanche Current vs. Pulse width
180
160
140
120
100
80
TOP
BOTTOM 1.0%
Duty Cycle
= 56A
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche
failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe
operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation
below based on circuit and waveforms shown in Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV
= Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
60
40
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 11, 15).
20
0
t
av =
Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
t
av
·f
Starting T
, Junction Temperature (°C)
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
Fig 16.
Maximum Avalanche Energy
E
AS (AR)
= P
D (ave)
·t
av
vs. Temperature
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AUIRLS3114Z
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
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AUIRLS3114Z
D
2
Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D
2
Pak (TO-263AB) Part Marking Information
Part Number
AULS3114Z
Date Code
IR Logo
Y= Year
WW= Work Week
Lot Code
9
2015-11-6
AUIRLS3114Z
D
2
Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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AUIRLS3114Z
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
D
2
-Pak
MSL1
Class M4 (+/- 600V)
†
AEC-Q101-002
Class H1C (+/- 2000V)
†
AEC-Q101-001
Class C5 (+/- 2000V)
†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest
passing voltage.
Revision History
Date
Comments
Added “Logic
Level Gate Drive” bullet in the features section on page 1
Updated data sheet with new IR corporate template
3/3/2014
Updated datasheet with corporate template
Corrected ordering table on page 1.
11/6/2015
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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