Infineon-Technologies-BC-817SU-E6327
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BC817SU
NPN Silicon AF Transistor
•
For general AF applications
•
High collector current
•
High current gain
4
3
5
2
1
6
•
Low collector-emitter saturation voltage
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Type
BC817SU
Marking
B6s
Pin Configuration
1=E 2=C 3=C 4=C 5=C 6=B SC74
Package
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
Value
45
50
5
500
1
Unit
V
V
V
V
CEO
CBO
EBO
mA
A
I
C
Peak collector current,
t
≤
10 ms
I
p
CM
100
200
1000
mA
Base current
Peak base current
Total power dissipation-
I
B
I
BM
mW
°C
P
tot
T
≤
100°C
S
150
Junction temperature
Storage temperature
T
j
T
-65 … 150
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
≤
50
Unit
K/W
1)
R
thJS
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
1
2011-08-30
BC817SU
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
45
–
–
–
–
–
–
V
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 10 mA,
I
= 0
C
B
Collector-base breakdown voltage
I
= 10 µA,
I
= 0
50
5
C
E
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 25 V,
I
= 0
–
–
–
–
–
–
0.1
50
100 nA
CB
CB
E
= 25 V,
I
= 0 ,
T
= 150 °C
E
A
Emitter-base cutoff current
I
EBO
V
= 4 V,
I
= 0
EB
C
1)
–
DC current gain
h
FE
I
= 100 mA,
V
= 1 V
160
40
250
–
400
–
C
CE
I
= 500 mA,
V
= 1 V
C
CE
1)
Collector-emitter saturation voltage
I
= 500 mA,
I
= 50 mA
V
–
–
0.4
V
CEsat
C
B
1)
Base emitter saturation voltage
I
= 500 mA,
I
= 50 mA
V
–
–
1.2
BEsat
C
B
AC Characteristics
Transition frequency
–
–
–
170
3
–
–
–
MHz
pF
f
T
I
= 50 mA,
V
= 5 V,
f
= 100 MHz
C
CE
Collector-base capacitance
C
C
cb
eb
f
= 1 MHz,
V
= 10 V
BE
40
Emitter-base capacitance
V
= 0.5 V,
f
= 1 MHz
EB
1
Pulse test: t < 300µs; D < 2%
2
2011-08-30
BC817SU
DC current gain
h
=
ƒ
(
I
)
Collector-emitter saturation voltage
FE
C
V
= 1 V
I
=
ƒ
(
V
),
h
= 10
CE
C
CEsat FE
10
3
0.4
V
150 °C
10
2
0.2
0.1
0
25 °C
125 °C
– 50 °C
85 °C
25 °C
– 40 °C
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-4
10
-3
10
-2
10
-1
10
0
A
A
c
I
I
c
Base-emitter saturation voltage
Collector cutoff current
I
=
ƒ
(
T
)
CBO A
I
= (
V
),
h
= 10
V
= 25 V
C
BEsat
FE
CBO
BC 817/818
EHP00221
10
5
1.5
V
nA
Ι
CBO
1.2
1.1
1
10
4
150 °C
25 °C
max
10
3
10
2
– 50 °C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
typ
10
1
10
0
10
-4
10
-3
10
-2
10
-1
10
0
A
0
50
100
150
˚C
T
A
I
c
3
2011-08-30
BC817SU
Transition frequency
f
=
ƒ
(
I
)
Total power dissipation
P
=
ƒ
(
T
)
tot S
T
C
V
= parameter in V,
f
= 2 GHz
CE
BC 817/818
EHP00218
1
0
3
1200
MHz
5
f
T
mW
800
600
400
200
0
1
0
2
5
1
0
1
1
0
0
1
0
1
1
0
2
mA 1
0
3
°C
0
50
150
T
Ι
C
S
Permissible Pulse Load
R
=
ƒ
(
t
)
Permissible Pulse Load
thJS
p
P
/
P
=
ƒ
(
t
)
totmax totDC
p
10
3
10
3
–
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
D = 0
0.005
0.01
0.02
0.05
0.1
D = 0,5
0,2
0,1
0.2
0,05
0,02
0,01
0,005
0
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
s
T
T
P
P
4
2011-08-30
Package SC74
BC817SU
Package Outline
0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
0.15
(0.35)
-0.06
6
1
5
2
4
3
+0.1
A
0.35
0.95
-0.05
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations
in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (
Y
e
ar/Month)
Pin 1 marking
Laser marking
BCW66H
T
y
pe code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
5
2011-08-30
BC817SU
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-08-30
