Infineon-Technologies-BCM-856S-H6433
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BCM856S
PNP Silicon AF Transistor Array
•
Precision matched transistor pair:
∆
I
≤
10%
•
For current mirror applications
C
4
5
3
2
6
1
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated Transistors
•
Complementary type: BCM846S
•
BC856S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
C1
6
B2
5
E2
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
BCM856S
Marking
3Ms
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Package
Maximum Ratings
Parameter
Symbol
Value
65
80
80
5
100
200
250
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CES
CBO
EBO
mA
mW
°C
I
C
Peak collector current,
t
≤
10 ms
Total power dissipation-
I
p
CM
P
tot
T
= 115 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 … 150
1
2011-10-05
BCM856S
Thermal Resistance
Parameter
Junction – soldering point
Symbol
R
thJS
Value
140
Unit
K/W
1)
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
65
–
–
–
–
–
–
–
–
V
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
= 10 mA,
I
= 0 A
C
B
Collector-base breakdown voltage
I
= 10 µA,
I
= 0 A
80
80
5
C
E
Collector-emitter breakdown voltage
I
= 10 µA,
V
= 0 A
C
BE
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0 A
E
C
Collector-base cutoff current
I
µA
–
CBO
V
V
= 30 V,
I
= 0 A
–
–
–
–
0.015
5
CB
CB
E
= 30 V,
I
= 0 A,
T
= 150 °C
E
A
2)
DC current gain-
I
= 10 µA,
V
= 5 V
h
FE
–
250
290
–
C
CE
I
= 2 mA,
V
= 5 V
200
450
C
CE
2)
Collector-emitter saturation voltage
I
= 10 mA,
I
= 0.5 mA
V
mV
CEsat
BEsat
–
–
90
250
300
650
C
B
I
= 100 mA,
I
= 5 mA
C
B
2)
Base emitter saturation voltage
I
= 10 mA,
I
= 0.5 mA
V
–
–
700
850
–
–
C
B
I
= 100 mA,
I
= 5 mA
C
B
2)
Base-emitter voltage-
I
= 2 mA,
V
= 5 V
V
BE(ON)
600
–
650
–
750
820
C
CE
I
= 10 mA,
V
= 5 V
C
CE
Matching
∆
I
%
C
I
= 1 µA,
V
=
V
= 1.0V
CE2
-10
-10
–
–
10
10
B
CE1
I
= 100 µA,
V
=
V
= 1.0V
B
CE1
CE2
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
Puls test: t < 300µs; D < 2%
2
2
2011-10-05
BCM856S
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
–
–
–
250
3
–
–
–
MHz
pF
Transition frequency
f
T
I
= 20 mA,
V
= 5 V,
f
= 100 MHz
C
CE
Collector-base capacitance
= 10 V,
f
= 1 MHz
C
C
cb
V
CB
8
Emitter-base capacitance
= 0.5 V,
f
= 1 MHz
eb
V
EB
Short-circuit input impedance
I
= 2 mA,
V
= 5 V,
f
= 1 kHz
h
h
h
h
F
–
–
–
–
–
4.5
2
–
–
k
Ω
11e
12e
21e
22e
C
CE
-4
Open-circuit reverse voltage transf. ratio
I
= 2 mA,
V
= 5 V,
f
= 1 kHz
10
C
CE
Short-circuit forward current transf. ratio
I
= 2 mA,
V
= 5 V,
f
= 1 kHz
330
30
–
–
–
C
CE
Open-circuit output admittance
–
µ
S
dB
I
= 2 mA,
V
= 5 V,
f
= 1 kHz
C
CE
10
Noise figure
I
= 200 µA,
V
= 5 V,
f
= 1 kHz,
C
CE
∆
f
= 200 Hz,
R
= 2 k
Ω
S
3
2011-10-05
BCM856S
DC current gain
h
=
ƒ
(
I
)
Collector-emitter saturation voltage
FE
C
V
= 5V
I
=
ƒ
(
V
),
h
= 20
CE
C
CEsat FE
EHP00382
EHP00380
1
0
3
10
2
mA
5
100 C
25 C
Ι
C
h
FE
100 C
25 C
-50 C
-50
C
1
0
2
5
10
1
5
10
0
5
1
0
1
5
1
0
0
10
-1
0
1
0
-2
5 10
-1
5 10
0
5 1
0
1
10
2
0.1
0.2
0.3
0.4
V
0.5
mA
Ι
C
V
CEsat
Base-emitter saturation voltage
Output characteristics
I
=
ƒ
(
V
),
C CE
I
=
ƒ
(
V
),
h
= 20
I
= parameter
C
BEsat
FE
B
EHP00379
10
2
15
mA
mA
Ι
C
IB = 40µA
IB = 36µA
12
11
10
9
100
25
-50
C
C
C
10
1
5
IB =32µA
IB = 28µA
IB = 24µA
IB = 20µA
IB = 16µA
IB = 12µA
IB = 8µA
8
7
6
10
0
5
5
4
3
2
IB = 4µA
1
10
-1
0
0
V
0
1
2
3
5
0.2
0.4
0.6
0.8
V
1.2
VCE
V
BEsat
4
2011-10-05
BCM856S
Collector current
I
=
ƒ
(
V
)
Collector cutoff current
I
=
ƒ
(
T
)
C
BE
CBO A
V
= Parameter
V
= 30 V
CE
CBO
10
-1
EHP00381
10
4
nA
5V
1V
5V
1V
5V
1V
A
Ι
CB0
10
-2
10
-3
10
-4
10
-5
10
-6
10
3
5
TA=100°C
max
10
2
5
TA=25°C
typ
TA=-50°C
10
1
5
10
0
5
10
-1
V
0.2
0.3 0.4 0.5
0.6 0.7
0.8
1
0
50
100
150
C
VBE
T
A
Transition frequency
f
=
ƒ
(
I
)
Collector-base capacitance
C
=
ƒ
(
V
)
T
C
cb
CB
V
= parameter in V,
f
= 2 GHz
Emitter-base capacitance
C
=
ƒ
(
V
)
CE
eb EB
EHP00378
1
0
3
12
pF
MHz
5
f
T
10
9
8
7
6
5
4
3
2
1
0
1
0
2
5
CEB
CCB
1
0
1
1
0
-1
5
10
0
5
1
0
1
10
2
V
0
4
8
12
16
22
(
V
mA
Ι
C
V
)
CB EB
5
2011-10-05
BCM856S
Total power dissipation
P
=
ƒ
(
T
)
Permissible Pulse Load
R
=
ƒ
(
t
)
tot
S
thJS
p
10
3
K/W
300
mW
250
225
200
175
150
125
100
75
10
2
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
0
50
25
10
-1
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
°C
s
0
15 30 45 60 75 90
105 120
150
T
t
p
S
Permissible Pulse Load
P
/
P
=
ƒ
(
t
)
totmax totDC
p
10
3
–
D = 0
0.005
0.01
0.02
0.05
0.1
10
2
10
1
10
0
0.2
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
6
2011-10-05
BCM856S
Definition of matching
∆
I
= (
I
–
I
)/
I
C
C2 C1
C1
6
5
4
T
1
T
2
2
3
1
I
b
I
c
1
I
c
2
V
c
e
1
V
c
e
2
7
2011-10-05
P
ackage SOT363
BCM856S
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations
in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (
Y
e
ar/Month)
Pin 1 marking
Laser marking
BCR108S
T
y
pe code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
8
2011-10-05
BCM856S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
9
2011-10-05
